Design of Furan-Based Acceptors for Organic Photovoltaics

We explore a series of furan-based non-fullerene acceptors and report their optoelectronic properties, solid-state packing, photodegradation mechanism and application in photovoltaic devices. Incorporating furan building blocks leads to the expected enhanced backbone planarity, reduced band gap and red-shifted absorption of these acceptors. Still, their position in the molecule is critical for stability and device performance. We found that the photodegradation of these acceptors originates from two distinct pathways: electrocyclic photoisomerization and Diels-Alder cycloaddition of singlet oxygen. These mechanisms are of general significance to most non-fullerene acceptors, and the photostability depends strongly on the molecular structure. Placement of furans next to the acceptor termini leads to better photostability, well-balanced hole/electron transport, and significantly improved device performance. Methylfuran as the linker offers the best photostability and power conversion efficiency (>14 %), outperforming all furan-based acceptors reported to date and all indacenodithiophene-based acceptors. Our findings show the possibility of photostable furan-based alternatives to the currently omnipresent thiophene-based photovoltaic materials.

Improving Environmental and Operational Stability of Polymer Field-Effect Transistors by Doping with Tetranitrofluorenone

Operational instability of organic field-effect transistors (OFETs) is one of the key limitations for applications of printed electronics. Environmental species, especially oxygen and water, unintentionally introduced in the OFET channel, can act as either dopants or traps for charge carriers, affecting the electrical characteristics and stability of devices. Here, we report that intentional doping of the benchmark p-type semiconducting polymer (DPP-DTT) with 2,4,5,7-tetranitrofluorenone (TeNF) markedly improves the operational and environmental stability of OFETs. Electrical interrogation of DPP-DTT OFETs in various environments and at variable temperatures shows suppression of electron-induced traps and increase of hole mobility in oxygen-rich environment, while the water molecules act as traps for positive charge carrier, reducing the hole mobility and significantly shifting the threshold voltage. Doping of DPP-DTT with TeNF suppresses both effects, resulting in environmentally independent performance and superior long-term stability of unencapsulated devices for up to 4 months in ambient air. Furthermore, the doped OFETs exhibit dramatically reduced hysteresis and bias-stressed current drop. Such improvement of the environmental and operational stabilities is ascribed to the mitigation of traps induced by the injected minority carrier (electrons) and the reduction of the majority carrier (hole) traps in doped polymer films due to enhanced microstructural order.

Decoupling Strategy for Enhanced Syngas Generation from Photoelectrochemical CO2 Reduction

Photoelectrochemical CO₂ reduction into syngas (a mixture of CO and H₂) provides a promising route to mitigate greenhouse gas emissions and store intermittent solar energy into value-added chemicals. Design of photoelectrode with high energy conversion efficiency and controllable syngas composition is of central importance but remains challenging. Herein, we report a decoupling strategy using dual cocatalysts to tackle the challenge based on joint computational and experimental investigations. Density functional theory calculations indicate the optimization of syngas generation using a combination of fundamentally distinctive catalytic sites. Experimentally, by integrating spatially separated dual cocatalysts of a CO-generating catalyst and a H₂-generating catalyst with GaN nanowires on planar Si photocathode, we report a record high applied bias photon-to-current efficiency of 1.88% and controllable syngas products with tunable CO/H₂ ratios (0–10) under one-sun illumination. Moreover, unassisted solar CO₂ reduction with a solar-to-syngas efficiency of 0.63% is demonstrated in a tandem photoelectrochemical cell.

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Combined experimental and theoretical investigations were performed

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A record high applied bias photon-to-current efficiency of 1.88% was achieved

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The CO/H₂ ratio in the syngas product can be controllably tuned in a wide range

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Unassisted syngas generation was proved in a tandem photoelectrochemical cell

Nitroaromatics as n-type organic semiconductors for field effect transistors

The nitro group (NO2) is one of the most common electron-withdrawing groups but it has rarely been used in the design of organic semiconductors (OSCs). Herein, we report the n-type semiconducting behavior of simple fluorenone derivatives functionalized with NO2 and CN groups. While the electron mobilities measured in the thin film field-effect transistors are modest (10-6-10-4 cm2 V-1 s-1), the nitrofluorenone OSCs offer excellent air-stability and remarkable tunability of energy levels via facile modification of the substitution pattern. We study the effect of substituents on the electrochemical properties, molecular and crystal structure, and the charge transport properties of nitrofluorenones to revitalize the underestimated potential of NO2 functionalization in organic electronics.