Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

Atomic, electronic structure and composition of top-down metal-assisted wet-chemically etched silicon nanowires were studied by synchrotron radiation based X-ray absorption near edge structure technique. Local surrounding of the silicon and oxygen atoms in silicon nanowires array was studied on as-prepared nanostructured surfaces (atop part of nanowires) and their bulk part after, first time applied, in-situ mechanical removal atop part of the formed silicon nanowires. Silicon suboxides together with disturbed silicon dioxide were found in the composition of the formed arrays that affects the electronic structure of silicon nanowires. The results obtained by us convincingly testify to the homogeneity of the phase composition of the side walls of silicon nanowires and the electronic structure in the entire length of the nanowire. The controlled formation of the silicon nanowires array may lead to smart engineering of its atomic and electronic structure that influences the exploiting strategy of metal-assisted wet-chemically etched silicon nanowires as universal matrices for different applications.

Strong Spin Dependence of Correlation Effects in Ni Due to Stoner Excitations

Using high-resolution angle-resolved photoemission, we observe a strong spin-dependent renormalization and lifetime broadening of the quasiparticle excitations in the electronic band structure of Ni(111) in an energy window of ∼0.3  eV below the Fermi level. We derive a quantitative result for the spin-dependent lifetime broadening by comparing the scattering rates of majority and minority d states, and further show that spin-dependent electron correlations are instead negligible for sp states. From our analysis we experimentally determine the effective on-site Coulomb interaction U caused by Stoner-like interband transitions between majority and minority d states. The present results demonstrate the remarkable impact of spin-dependent electron correlation effects originating from single-particle excitations in a prototypical 3d transition metal, paving the way for further refinement of current many-body theoretical approaches.

Electronic properties and structure of single crystal perylene

The transport properties of electronic devices made from single crystalline molecular semiconductors typically outperform those composed of thin-films of the same material. To further understand the superiority of these extrinsic device properties, an understanding of the intrinsic electronic structure and properties of the organic semiconductor is necessary. An investigation of the electronic structure and properties of single crystal α-phase perylene (C₂₀H₁₂), a five-ringed aromatic molecule, is presented using angle-resolved ultraviolet photoemission, x-ray photoelectron spectroscopy (XPS), and field-effect transistor measurements. Key aspects of the electronic structure of single crystal α-perylene critical to charge transport are determined, including the energetic location of the highest occupied molecular orbital (HOMO), the HOMO bandwidth, and surface work function. In addition, using high resolution XPS, we can distinguish between inequivalent carbon atoms within the perylene crystal and, from the shake-up satellite structure in XPS, gain insight into the intramolecular properties in α-perylene. From the device measurements, the charge carrier mobility of α-perylene is found to depend on the device structure and the choice of dielectric, with values in the range of 10^-3 cm² V^-1 s^-1.

Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach.

Large tunable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi(2)Se(3) from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature.