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Kim KH, Song S, Kim B, Musavigharavi P, Trainor N, Katti K, Chen C, Kumari S, Zheng J, Redwing JM, Stach EA, Olsson Iii RH, Jariwala D. Tuning Polarity in WSe 2/AlScN FeFETs via Contact Engineering. ACS Nano 2024; 18:4180-4188. [PMID: 38271989 DOI: 10.1021/acsnano.3c09279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and ferroelectric Al0.68Sc0.32N (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF current ratios, and large memory windows (MW). However, previous studies have solely focused on n-type FeFETs, leaving a crucial gap in the development of p-type and ambipolar FeFETs, which are essential for expanding their applicability to a wide range of circuit-level applications. Here, we present a comprehensive demonstration of n-type, p-type, and ambipolar FeFETs on an array scale using AlScN and multilayer/monolayer WSe2. The dominant injected carrier type is modulated through contact engineering at the metal-semiconductor junction, resulting in the realization of all three types of FeFETs. The effect of contact engineering on the carrier injection is further investigated through technology-computer-aided design simulations. Moreover, our 2D WSe2/AlScN FeFETs achieve high electron and hole current densities of ∼20 and ∼10 μA/μm, respectively, with a high ON/OFF ratio surpassing ∼107 and a large MW of >6 V (0.14 V/nm).
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Bumho Kim
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Pariasadat Musavigharavi
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Nicholas Trainor
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Keshava Katti
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Chen Chen
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Shalini Kumari
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Jeffrey Zheng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Joan M Redwing
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Eric A Stach
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Roy H Olsson Iii
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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