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Korade SD, Gour KS, Karade VC, Jang JS, Rehan M, Patil SS, Bhat TS, Patil AP, Yun JH, Park J, Kim JH, Patil PS. Improving the Device Performance of CZTSSe Thin-Film Solar Cells via Indium Doping. ACS Appl Mater Interfaces 2023. [PMID: 38047907 DOI: 10.1021/acsami.3c13813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of In2S3 is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (Voc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low Voc loss.
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Affiliation(s)
- Sumit D Korade
- Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra, India
- Optoelectronics Convergence Research Center and Department of Materials Science & Engineering, Chonnam National University, Gwangju 61186, Republic of Korea
- Department of Physics, Kisan Veer Mahavidyalaya, Wai 412803, Maharashtra, India
| | - Kuldeep Singh Gour
- Surface Engineering Group, Advanced Materials & Processes Division, CSIR-National Metallurgical Laboratory, Jamshedpur 831007, Jharkhand, India
| | - Vijay C Karade
- Department of Energy Engineering, Korea Institute of Energy Technology (KENTECH), Naju, Jeonnam 58217, Republic of Korea
| | - Jun Sung Jang
- Optoelectronics Convergence Research Center and Department of Materials Science & Engineering, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Muhammad Rehan
- Photovoltaics Research Department, Korea Institute of Energy Research (KIER), 152-Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea
| | - Satyajeet S Patil
- Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra, India
| | - Tejasvinee S Bhat
- School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, Maharashtra, India
| | - Akhilesh P Patil
- School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, Maharashtra, India
| | - Jae Ho Yun
- Department of Energy Engineering, Korea Institute of Energy Technology (KENTECH), Naju, Jeonnam 58217, Republic of Korea
| | - Jongsung Park
- Department of Energy Engineering, Gyeongsang National University, Jinju, Gyeongnam 52849, Republic of Korea
| | - Jin Hyeok Kim
- Optoelectronics Convergence Research Center and Department of Materials Science & Engineering, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Pramod S Patil
- Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra, India
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