Dosimetry and defect analysis of aluminum-doped zinc oxide after irradiation with 90Sr/90Y

This study aims to perform dosimetry and defect analysis of different Al concentrations in AZO after being irradiated for 91 days using ⁹⁰Sr/⁹⁰Y. Particle interaction was also simulated using MCNPX to confirm the effect of Al addition on the radiation dose received. AZO films were prepared using the sol-gel spin coating method with Al concentrations ranging from 0 wt%, 3 wt%, 6 wt%, and 9 wt%, while the structure was characterized with XRD and FTIR. The beta dose received for 91 days was calculated by direct measurement using a gamma survey meter and simulation by MCNPX, both culminating in the order of 10² Gy. The results showed that the damage to AZO crystallization increased with rising Al concentrations. Moreover, the deposited energy received by AZO increased with increasing concentrations of Al. The 9 wt% Al concentration caused the most significant damage to AZO crystallization compared to lower concentrations.

Optimization of surface passivation parameters in [147Pm]-Si planar p-n junction betavoltaic based on analytical 1-D minority carrier diffusion equation approaches

Recombination of the carrier due to the surface state level traps could affect betavoltaic performance. Herein, we employed a theoretical 1-D carrier transport calculation to investigate the surface passivation effect in a planar [¹⁴⁷Pm]-Si p-n junction betavoltaic cell and the results were verified using previous studies. In comparison to the ideal condition of the passivated surface, we predict a 10.74% power loss at the device, thus further research concerning the surface passivation layer for betavoltaic batteries might be necessary.