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Jiang X, Zhou Q, Lu Y, Liang H, Li W, Wei Q, Pan M, Wen X, Wang X, Zhou W, Yu D, Wang H, Yin N, Chen H, Li H, Pan T, Ma M, Liu G, Zhou W, Su Z, Chen Q, Fan F, Zheng F, Gao X, Ji Q, Ning Z. Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells. Natl Sci Rev 2024; 11:nwae055. [PMID: 38577668 PMCID: PMC10989298 DOI: 10.1093/nsr/nwae055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Revised: 01/26/2024] [Accepted: 02/04/2024] [Indexed: 04/06/2024] Open
Abstract
Enhancing the quality of junctions is crucial for optimizing carrier extraction and suppressing recombination in semiconductor devices. In recent years, metal halide perovskite has emerged as the most promising next-generation material for optoelectronic devices. However, the construction of high-quality perovskite junctions, as well as characterization and understanding of their carrier polarity and density, remains a challenge. In this study, using combined electrical and spectroscopic characterization techniques, we investigate the doping characteristics of perovskite films by remote molecules, which is corroborated by our theoretical simulations indicating Schottky defects consisting of double ions as effective charge dopants. Through a post-treatment process involving a combination of biammonium and monoammonium molecules, we create a surface layer of n-type low-dimensional perovskite. This surface layer forms a heterojunction with the underlying 3D perovskite film, resulting in a favorable doping profile that enhances carrier extraction. The fabricated device exhibits an outstanding open-circuit voltage (VOC) up to 1.34 V and achieves a certified efficiency of 19.31% for single-junction wide-bandgap (1.77 eV) perovskite solar cells, together with significantly enhanced operational stability, thanks to the improved separation of carriers. Furthermore, we demonstrate the potential of this wide-bandgap device by achieving a certified efficiency of 27.04% and a VOC of 2.12 V in a perovskite/perovskite tandem solar cell configuration.
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Affiliation(s)
- Xianyuan Jiang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qilin Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Hao Liang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wenzhuo Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qi Wei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Mengling Pan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xin Wen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xingzhi Wang
- Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wei Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Danni Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Hao Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou 215123, China
| | - Hao Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Hansheng Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Ting Pan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Mingyu Ma
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Gaoqi Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wenjia Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Zhenhuang Su
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou 215123, China
| | - Fengjia Fan
- Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China
| | - Fan Zheng
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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