1
|
Guo M, Diaz-Canestro C, Pugliese NR, Paneni F, Montero D. Lean body mass and the cardiorespiratory phenotype: An ethnic-specific relationship in Hans Chinese women and men. J Cachexia Sarcopenia Muscle 2024. [PMID: 38632694 DOI: 10.1002/jcsm.13464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Revised: 12/27/2023] [Accepted: 01/14/2024] [Indexed: 04/19/2024] Open
Abstract
BACKGROUND Lean body mass (LBM) and the functional capacity of cardiovascular (CV) and respiratory systems constitute a female-specific relationship in European-American individuals. Whether this recent finding be extrapolated to the world's largest ethnic group, that is, Hans Chinese (HC, a population characterized by low LBM), is unknown. METHODS Healthy HC adults (n = 144, 50% ♀) closely matched by sex, age and physical activity were included. Total and regional (leg, arm and trunk) LBM and body composition were measured via dual-energy X-ray absorptiometry. Cardiac structure, stiffness, central/peripheral haemodynamics and peak O2 consumption (VO2peak) were assessed via transthoracic echocardiography and pulmonary gas analyses at rest and during exercise up to peak effort. Regression analyses determined the sex-specific relationship of LBM with cardiac and aerobic phenotypes. RESULTS Total and regional LBM were lower and body fat percentage higher in women compared with men (P < 0.001). In both sexes, total LBM positively associated with left ventricular (LV) mass and peak volumes (r ≥ 0.33, P ≤ 0.005) and negatively with LV end-systolic and central arterial stiffness (r ≥ -0.34, P ≤ 0.004). Total LBM strongly associated with VO2peak (r ≥ 0.60, P < 0.001) and peak cardiac output (r ≥ 0.40, P < 0.001) in women and men. Among regional LBM, leg LBM prominently associated with the arterio-venous O2 difference at peak exercise in both sexes (r ≥ 0.43, P < 0.001). Adjustment by adiposity or CV risk factors did not modify the results. CONCLUSIONS LBM independently determines internal cardiac dimensions, ventricular mass, distensibility and the capacity to deliver and consume O2 in HC adults irrespective of sex.
Collapse
Affiliation(s)
- Meihan Guo
- Faculty of Medicine, Hong Kong University, Hong Kong
| | - Candela Diaz-Canestro
- Faculty of Medicine, Hong Kong University, Hong Kong
- Department of Medicine, School of Clinical Medicine, Hong Kong University, Hong Kong
| | | | - Francesco Paneni
- Center for Translational and Experimental Cardiology (CTEC), Zurich University Hospital, University of Zurich, Zurich, Switzerland
- University Heart Center, University Hospital Zurich, University of Zurich, Zurich, Switzerland
| | - David Montero
- Faculty of Medicine, Hong Kong University, Hong Kong
- Department of Medicine, School of Clinical Medicine, Hong Kong University, Hong Kong
| |
Collapse
|
2
|
Zha J, Shi S, Chaturvedi A, Huang H, Yang P, Yao Y, Li S, Xia Y, Zhang Z, Wang W, Wang H, Wang S, Yuan Z, Yang Z, He Q, Tai H, Teo EHT, Yu H, Ho JC, Wang Z, Zhang H, Tan C. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. Adv Mater 2023; 35:e2211598. [PMID: 36857506 DOI: 10.1002/adma.202211598] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/16/2023] [Indexed: 05/19/2023]
Abstract
Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.
Collapse
Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Apoorva Chaturvedi
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Peng Yang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huide Wang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shaocong Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhen Yuan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong, 999077, P. R. China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Edwin Hang Tong Teo
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
- School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| |
Collapse
|