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Ma X, Wang P, Huang L, Ding R, Zhou K, Shi Y, Chen F, Zhuang Q, Huang Q, Lin Y, Zheng Z. A monolithically integrated in-textile wristband for wireless epidermal biosensing. Sci Adv 2023; 9:eadj2763. [PMID: 37948514 PMCID: PMC10637736 DOI: 10.1126/sciadv.adj2763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 10/13/2023] [Indexed: 11/12/2023]
Abstract
Textile bioelectronics that allow comfortable epidermal contact hold great promise in noninvasive biosensing. However, their applications are limited mainly because of the large intrinsic electrical resistance and low compatibility for electronics integration. We report an integrated wristband that consists of multifunctional modules in a single piece of textile to realize wireless epidermal biosensing. The in-textile metallic patterning and reliable interconnect encapsulation contribute to the excellent electrical conductivity, mechanical robustness, and waterproofness that are competitive with conventional flexible devices. Moreover, the well-maintained porous textile architectures deliver air permeability of 79 mm s-1 and moisture permeability of 270 g m-2 day-1, which are more than one order of magnitude higher than medical tapes, thus ensuring superior wearing comfort. The integrated in-textile wristband performed continuous sweat potassium monitoring in the range of 0.3 to 40 mM with long-term stability, demonstrating its great potential for wearable fitness monitoring and point-of-care testing.
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Affiliation(s)
- Xiaohao Ma
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Pengwei Wang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Liting Huang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Ruochen Ding
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kemeng Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuqing Shi
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Fan Chen
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Qiuna Zhuang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Qiyao Huang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Yuanjing Lin
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zijian Zheng
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Department of Applied Biology and Chemical Technology, Faculty of Science, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
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Song J, Liu H, Zhao Z, Guo X, Liu CK, Griggs S, Marks A, Zhu Y, Law HKW, McCulloch I, Yan F. 2D metal-organic frameworks for ultraflexible electrochemical transistors with high transconductance and fast response speeds. Sci Adv 2023; 9:eadd9627. [PMID: 36630506 PMCID: PMC9833676 DOI: 10.1126/sciadv.add9627] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 12/12/2022] [Indexed: 06/17/2023]
Abstract
Electrochemical transistors (ECTs) have shown broad applications in bioelectronics and neuromorphic devices due to their high transconductance, low working voltage, and versatile device design. To further improve the device performance, semiconductor materials with both high carrier mobilities and large capacitances in electrolytes are needed. Here, we demonstrate ECTs based on highly oriented two-dimensional conjugated metal-organic frameworks (2D c-MOFs). The ion-conductive vertical nanopores formed within the 2D c-MOFs films lead to the most convenient ion transfer in the bulk and high volumetric capacitance, endowing the devices with fast speeds and ultrahigh transconductance. Ultraflexible device arrays are successfully used for wearable on-skin recording of electrocardiogram (ECG) signals along different directions, which can provide various waveforms comparable with those of multilead ECG measurement systems for monitoring heart conditions. These results indicate that 2D c-MOFs are excellent semiconductor materials for high-performance ECTs with promising applications in flexible and wearable electronics.
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Affiliation(s)
- Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Hong Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Zeyu Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Xuyun Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Chun-ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Sophie Griggs
- Department of Chemistry, University of Oxford, Oxford OX1 3TA, UK
| | - Adam Marks
- Department of Chemistry, University of Oxford, Oxford OX1 3TA, UK
| | - Ye Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Helen Ka-wai Law
- Department of Health Technology and Informatics Faculty of Health and Social Sciences, The Hong Kong Polytechnic University, Hung Hom, Kowloon 999077, Hong Kong, People’s Republic of China
| | - Iain McCulloch
- Department of Chemistry, University of Oxford, Oxford OX1 3TA, UK
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon 999077, Hong Kong, People’s Republic of China
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Huang L, Zheng F, Deng Q, Thi QH, Wong LW, Cai Y, Wang N, Lee CS, Lau SP, Ly TH, Zhao J. Anomalous fracture in two-dimensional rhenium disulfide. Sci Adv 2020; 6:eabc2282. [PMID: 33208360 PMCID: PMC7673817 DOI: 10.1126/sciadv.abc2282] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2020] [Accepted: 09/29/2020] [Indexed: 05/22/2023]
Abstract
Low-dimensional materials usually exhibit mechanical properties from those of their bulk counterparts. Here, we show in two-dimensional (2D) rhenium disulfide (ReS2) that the fracture processes are dominated by a variety of previously unidentified phenomena, which are not present in bulk materials. Through direct transmission electron microscopy observations at the atomic scale, the structures close to the brittle crack tip zones are clearly revealed. Notably, the lattice reconstructions initiated at the postcrack edges can impose additional strain on the crack tips, modifying the fracture toughness of this material. Moreover, the monatomic thickness allows the restacking of postcrack edges in the shear strain-dominated cracks, which is potentially useful for the rational design of 2D stacking contacts in atomic width. Our studies provide critical insights into the atomistic processes of fracture and unveil the origin of the brittleness in the 2D materials.
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Affiliation(s)
- Lingli Huang
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Fangyuan Zheng
- Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Qingming Deng
- Physics Department and Jiangsu Key Laboratory for Chemistry of Low-Dimensional Materials, Huaiyin Normal University, Huaian 223300, China
| | - Quoc Huy Thi
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Lok Wing Wong
- Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Yuan Cai
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Ning Wang
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Shu Ping Lau
- Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China.
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, China
| | - Jiong Zhao
- Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
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Guo Y, Zhang W, Wu H, Han J, Zhang Y, Lin S, Liu C, Xu K, Qiao J, Ji W, Chen Q, Gao S, Zhang W, Zhang X, Chai Y. Discovering the forbidden Raman modes at the edges of layered materials. Sci Adv 2018; 4:eaau6252. [PMID: 30555917 PMCID: PMC6294603 DOI: 10.1126/sciadv.aau6252] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2018] [Accepted: 11/14/2018] [Indexed: 06/09/2023]
Abstract
The edges of layered materials have unique properties that substantially differ from the body regions. In this work, we perform a systematic Raman study of the edges of various layered materials (MoS2, WS2, WSe2, PtS2, and black phosphorus). The Raman spectra of the edges feature newly observed forbidden Raman modes, which are originally undetectable from the body region. By selecting the edge type and the polarization directions of the incident and scattered light, all forbidden Raman modes are distinctly detected. Optical simulations show that the edges of layered materials drastically distort the electromagnetic fields of both the incident and scattered light, so that the light interacts with the edges in a distinct way, which differs from its interactions with the body regions.
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Affiliation(s)
- Yao Guo
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Weixuan Zhang
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Hanchun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Junfeng Han
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yongliang Zhang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Shenghuang Lin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Chunru Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Kang Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Jingsi Qiao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- Department of Physics, Renmin University of China, Beijing 100872, China
| | - Wei Ji
- Department of Physics, Renmin University of China, Beijing 100872, China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
| | - Song Gao
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China
| | - Xiangdong Zhang
- School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
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He D, Qiao J, Zhang L, Wang J, Lan T, Qian J, Li Y, Shi Y, Chai Y, Lan W, Ono LK, Qi Y, Xu JB, Ji W, Wang X. Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride. Sci Adv 2017; 3:e1701186. [PMID: 28913429 PMCID: PMC5587094 DOI: 10.1126/sciadv.1701186] [Citation(s) in RCA: 65] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2017] [Accepted: 08/07/2017] [Indexed: 05/03/2023]
Abstract
Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm2/Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C8-BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties.
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Affiliation(s)
- Daowei He
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jingsi Qiao
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Linglong Zhang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Junya Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Tu Lan
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jun Qian
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yun Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Wei Lan
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Luis K. Ono
- Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Kunigami-gun, Onna-son, Okinawa 904-0495, Japan
| | - Yabing Qi
- Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Kunigami-gun, Onna-son, Okinawa 904-0495, Japan
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China
- Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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