Wu S, Yan B, Liu S, Li W. Theoretical prediction on the insertion reactions of stannylenoid H
2SnLiF with CH
3X and SiH
3X (X = F, Cl, Br).
J Mol Graph Model 2024;
129:108755. [PMID:
38452416 DOI:
10.1016/j.jmgm.2024.108755]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 02/29/2024] [Accepted: 03/01/2024] [Indexed: 03/09/2024]
Abstract
Density functional theory was used to study the insertion reaction of stannylenoid H2SnLiF with CH3X, SiH3X (X = F, Cl, Br). Comparing the reaction barrier of H2SnLiF with CH3X, SiH3X, it can be found that the order of the difficulty of insertion reaction is F > Cl > Br. The insertion reaction potential barrier of SiH3X is lower than that of CH3X, which means that SiH3X is easier to react. According to the calculation results, the reaction law in THF solvent is consistent with that in vacuum, while in THF solvent, the barrier is lower and therefore more prone to reactions. This work provides theoretical support for the reaction properties of stannylenoids.
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