Zhang G, Wu H, Zhang L, Zhang S, Yang L, Gao P, Wen X, Jin W, Guo F, Xie Y, Li H, Tao B, Zhang W, Chang H. Highly-Tunable Intrinsic Room-Temperature Ferromagnetism in 2D van der Waals Semiconductor Cr
x Ga
1- x Te.
Adv Sci (Weinh) 2022;
9:e2103173. [PMID:
34705336 PMCID:
PMC8728846 DOI:
10.1002/advs.202103173]
[Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 08/23/2021] [Indexed: 05/30/2023]
Abstract
The combination of semiconductivity and tunable ferromagnetism is pivotal for electrical control of ferromagnetism and next-generation low-power spintronic devices. However, Curie temperatures (TC ) for most traditional intrinsic ferromagnetic semiconductors (≤200 K) and recently discovered two-dimensional (2D) ones (<70 K) are far below room temperature. 2D van der Waals (vdW) semiconductors with intrinsic room-temperature ferromagnetism remain elusive considering the unfavored 2D long-range ferromagnetic order indicated by Mermin-Wagner theorem. Here, vdW semiconductor Crx Ga1- x Te crystals exhibiting highly tunable above-room-temperature ferromagnetism with bandgap 1.62-1.66 eV are reported. The saturation magnetic moment (Msat ) of Crx Ga1- x Te crystals can be effectively regulated up to ≈5.4 times by tuning Cr content and ≈75.9 times by changing the thickness. vdW Crx Ga1- x Te ultrathin semiconductor crystals show robust room-temperature ferromagnetism with the 2D quantum confinement effect, enabling TC 314.9-329 K for nanosheets, record-high for intrinsic vdW 2D ferromagnetic semiconductors. This work opens an avenue to room-temperature 2D vdW ferromagnetic semiconductor for 2D electronic and spintronic devices.
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