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Wang C, Yan L, Si J, Wang N, Li T, Hou X. Exceptional Stability against Water, UV Light, and Heat for CsPbBr 3@Pb-MOF Composites. Small Methods 2024:e2400241. [PMID: 38644347 DOI: 10.1002/smtd.202400241] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 03/20/2024] [Indexed: 04/23/2024]
Abstract
All-inorganic lead halide perovskite nanocrystals (NCs) have been widely applied in optoelectronic devices owing to their excellent photoluminescence (PL) properties. However, poor stability upon exposure to water, UV light or heat strongly limits their practical application. Herein, CsPbBr3@Pb-MOF composites with exceptional stability against water, UV light, and heat are synthesized by ultrasonic processing the precursors of lead-based MOF (Pb-MOF), oleylammonium bromide (OAmBr) and cesium oleate (Cs-OA) solutions at room temperature. Pb-MOF can not only provide the lead source for the in situ growth of CsPbBr3 NCs, but also the protective layer of perovskites NCs. The formed CsPbBr3@Pb-MOF composites show a considerable PL quantum yield (PLQY) of 67.8%, and can maintain 90% of the initial PL intensity when immersed in water for 2 months. In addition, the outstanding PL stability against UV light and heat is demonstrated with CsPbBr3 NCs synthesized by the conventional method as a comparison. Finally, a green (light-emitting diode) LED is fabricated using green-emitting CsPbBr3@Pb-MOF composites and exhibits excellent stability without packaging when immersed in water for 30 days. This study provides a practical approach to improve the stability in aqueous phase, which may pave the way for future applications for various optoelectronic devices.
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Affiliation(s)
- Chenxu Wang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Laboratory of Photonics Technology for Information, School of Electronic Science and Engineering, Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, 710049, China
| | - Lihe Yan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Laboratory of Photonics Technology for Information, School of Electronic Science and Engineering, Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, 710049, China
| | - Jinhai Si
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Laboratory of Photonics Technology for Information, School of Electronic Science and Engineering, Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, 710049, China
| | - Ning Wang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Laboratory of Photonics Technology for Information, School of Electronic Science and Engineering, Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, 710049, China
| | - Ting Li
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Laboratory of Photonics Technology for Information, School of Electronic Science and Engineering, Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, 710049, China
| | - Xun Hou
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Laboratory of Photonics Technology for Information, School of Electronic Science and Engineering, Xi'an Jiaotong University, No.28, Xianning West Road, Xi'an, 710049, China
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