Wang G, Liu D, Fan S, Li Z, Su J. High-
kerbium oxide film prepared by sol-gel method for low-voltage thin-film transistor.
Nanotechnology 2021;
32:215202. [PMID:
33556929 DOI:
10.1088/1361-6528/abe439]
[Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2020] [Accepted: 02/08/2021] [Indexed: 06/12/2023]
Abstract
In this work, high-dielectric-constant (high-k) erbium oxide(Er2O3)film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C). The effect of annealing temperature on the microstructural and electrical properties of Er2O3nanofilm is investigated. To demonstrate the applicability of the Er2O3film, the indium oxide (In2O3) thin film transistor (TFT)-based amorphous Er2O3dielectric film is fabricated at different temperatures. The TFT-based EO-600 shows a low-operating voltage and good electrical properties. The inverter demonstrates that the Er2O3nanofilm synthesized by the sol-gel method could be a promising candidate as the dielectric layer in a low-voltage electronic device.
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