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Xie T, Tao B, Zhao R, Zhang T, Chen X, Yang K, Li Z, Xia Y, Tian H, Ming G. Laser-induced transverse voltage effect in c-axis inclined La xSr 1-xTiO 3thin films prepared by MOCVD. Nanotechnology 2024; 35:275202. [PMID: 38522106 DOI: 10.1088/1361-6528/ad373e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 03/24/2024] [Indexed: 03/26/2024]
Abstract
Light and thermal detectors based on the laser-induced transverse voltage (LITV) effect have garnered significant interest for their rapid and broad spectral response. In this study, we prepared the La-doped SrTiO3(STO) epitaxial thin films on the 12° inclined single crystal LaAlO3(LAO) (100) substrates using our home-designed metal-organic chemical vapor deposition system. Under the illumination of a 248 nm laser, the LITV signals of LaxSr1-xTiO3films were observed and showed dependence on the La doping level, which can be explained by the changes in the light absorption coefficient, thermal conductivity, and optical penetration depth. The optimized LITV signal was observed with a peak voltage of 23.25 V and a decay time of 106 ns under the laser power density of 1.0 mJ mm-2. The high peak voltage and fast response time of LaxSr1-xTiO3show great potential in the field of light and thermal detection.
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Affiliation(s)
- Tian Xie
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Bowan Tao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Ruipeng Zhao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Tong Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Xi Chen
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Kai Yang
- Hypervelocity Aerodynamics Institute, China Aerodynamics Research and Development Center (CARDC), Mianyang 621000, People's Republic of China
| | - Zhenzhe Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Yudong Xia
- School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, People's Republic of China
| | - Hongbo Tian
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Guoliang Ming
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
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