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Wei T, Lian K, Tao J, Zhang H, Xu D, Han J, Fan C, Zhang Z, Bi W, Sun C. Mn-Doped Multiple Quantum Well Perovskites for Efficient Large-Area Luminescent Solar Concentrators. ACS Appl Mater Interfaces 2022; 14:44572-44580. [PMID: 36125906 DOI: 10.1021/acsami.2c12834] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Luminescent solar concentrators (LSCs) can be used as large-area sunlight collectors, which show great potential in the application of building-integrated photovoltaic areas. Achieving highly efficient LSCs requires the suppression of reabsorption losses while maintaining a high photoluminescence quantum yield (PLQY) and broad absorption. Perovskites as the superstar fluorophores have recently emerged as candidates for large-area LSCs. However, highly emissive perovskites with a large Stokes shift and broad absorption have not been obtained up to now. Here, we devised a facile synthetic route to obtain Mn-doped multiple quantum well (MQW) Br-based perovskites. The Br-based perovskite host ensures broad absorption. Efficient energy transfer from the exciton to the Mn dopant produces a large Stokes shift and high PLQY simultaneously. By further coating the perovskites with Al2O3, the stability and PLQY are greatly elevated. A large area of liquid LSC (40 cm × 40 cm × 0.5 cm) is fabricated, which possesses an internal quantum efficiency (ηint) of 47% and an optical conversion efficiency (ηopt) reaching 11 ± 1%, which shows the highest value for large-area LSCs.
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Affiliation(s)
- Tong Wei
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Kai Lian
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Jiaqi Tao
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Hu Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Da Xu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Jiachen Han
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Chao Fan
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Zihui Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Wengang Bi
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
| | - Chun Sun
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P. R. China
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