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Ma D, Su Y, Tian T, Yin H, Zou C, Huo T, Hu N, Yang Z, Zhang Y. Multichannel Room-Temperature Gas Sensors Based on Magnetic-Field-Aligned 3D Fe 3O 4@SiO 2@Reduced Graphene Oxide Spheres. ACS Appl Mater Interfaces 2020; 12:37418-37426. [PMID: 32814404 DOI: 10.1021/acsami.0c05574] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
Reduced graphene oxide (rGO) is considered as one of the ideal sensing materials for high-performance room-temperature gas sensors owing to its large specific surface areas, numerous active sites, and high carrier mobility. However, the sensing performance cannot be maximized due to the inevitable sheet stacking and agglomeration. Herein, we firstdemonstrate multichannel room-temperature gas sensors using magnetic-field-induced alignment of three-dimensional (3D) Fe3O4@SiO2@rGO core-shell spheres. Moreover, the sensing channels composed of spheres can be tailored by changing the concentration of spheres and the magnetic field. Experimental results suggest that the multichannel 3D Fe3O4@SiO2@rGO sensor exhibits an ultrahigh sensitivity of 34.41 with a good response stability and high selectivity toward 5 ppm of NO2 at room temperature, which is ca. 7.96 times higher than that of the random 3D rGO gas sensor. The high performance can be mainly ascribed to a full utilization of their large specific surface area and active sites of rGO nanosheets. We believe that our results not only contribute to the development of high-performance rGO-based sensing devices, but also provide a general approach to maximize the sensing performance of other nanomaterials.
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Affiliation(s)
- Defu Ma
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Yanjie Su
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Tian Tian
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Huan Yin
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Cheng Zou
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Tingting Huo
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Nantao Hu
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Zhi Yang
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Yafei Zhang
- Key Laboratory for Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
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