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Liu B, Duan Z, Yuan Z, Zhang Y, Zhao Q, Xie G, Jiang Y, Li S, Tai H. Designing Cu 2+ as a Partial Substitution of Protons in Polyaniline Emeraldine Salt: Room-Temperature-Recoverable H 2S Sensing Properties and Mechanism Study. ACS Appl Mater Interfaces 2022; 14:27203-27213. [PMID: 35652577 DOI: 10.1021/acsami.2c05863] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Hydrogen sulfide (H2S) sensors are in urgent demand in the field of hermetic environment detection and metabolic disease diagnosis. However, most of the reported room-temperature (RT) H2S sensors based on transition metal oxides/salts unavoidably suffer from the poisoning effect, resulting in the unrecoverable behavior to restrain their application. Herein, copper(II) chloride-doped polyaniline emeraldine salt (PANI-CuCl2) was devised for RT-recoverable H2S detection, where the copper ion (Cu2+) was designed as a partial substitution of protons (H+) in PANI. The prepared gas sensor exhibited full recovery capability toward 0.25-10 ppm H2S, good repeatability, and long-term stability under 80% RH. Meanwhile, the changes of the PANI-CuCl2 during the H2S sensing period were analyzed via multiple analytical methods to reveal the reversible sensing behavior. Results showed that doping of Cu2+ not only promoted the PANI's response through the formation of conductive copper sulfide (CuS) and following H+ redoping in the PANI but also facilitated the sensor's recovery behavior because of the Cu2+ regeneration under the H+/oxygen environment. This work not only proves the changes of the interaction between the PANI and Cu2+ during the H2S sensing period but also sheds light on designing recoverable H2S sensors based on transition metal salts.
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Affiliation(s)
- Bohao Liu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Zaihua Duan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Zhen Yuan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Yajie Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Qiuni Zhao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Guangzhong Xie
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Yadong Jiang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Shaorong Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China
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