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Gao X, Guo H, Wang R, Pan D, Chen P, Chen D, Lu H, Zhang R, Zheng Y. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN x as a Gate Dielectric. Micromachines (Basel) 2022; 13:1396. [PMID: 36144019 PMCID: PMC9505048 DOI: 10.3390/mi13091396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2022] [Revised: 08/21/2022] [Accepted: 08/24/2022] [Indexed: 06/16/2023]
Abstract
In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH3 flow during the deposition of SiNx can significantly affect the performances of metal-insulator-semiconductor (MIS) HEMTs. Compared to that without using NH3 flow, the device with the optimized NH3 flow exhibited three orders of magnitude lower gate leakage current, two orders of magnitude higher ON/OF drain current ratio, and an increased breakdown field by 69%. In addition, an in situ N2 plasma surface treatment prepared prior to SiNx deposition can further improve DC performances of MIS-HEMTs to a very low gate leakage current of 10-9 mA/mm and a high ON/OFF drain current ratio up to 109 by reducing the interface state density. These results demonstrate the great potential for using PECVD-SiNx as a gate dielectric in GaN-based MIS-HEMTs.
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Affiliation(s)
- Xiaohui Gao
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Hui Guo
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rui Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Danfeng Pan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Microfabrication and Integration Technology Center, Nanjing University, Nanjing 210023, China
| | - Peng Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Dunjun Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Hai Lu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Youdou Zheng
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
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