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Niu T, Chao L, Xia Y, Wang K, Ran X, Huang X, Chen C, Wang J, Li D, Su Z, Hu Z, Gao X, Zhang J, Chen Y. Phase-Pure α-FAPbI 3 Perovskite Solar Cells via Activating Lead-Iodine Frameworks. Adv Mater 2023:e2309171. [PMID: 38104281 DOI: 10.1002/adma.202309171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 12/04/2023] [Indexed: 12/19/2023]
Abstract
Narrow bandgap cubic formamidine perovskite (α-FAPbI3 ) is widely studied for its potential to achieve record-breaking efficiency. However, its high preparation difficulty caused by lattice instability is criticized. A popular strategy for stabilizing the α-FAPbI3 lattice is to replace intrinsic FA+ or I- with smaller ions of MA+ , Cs+ , Rb+ , and Br- , whereas this generally leads to broadened optical bandgap and phase separation. Studies show that ions substitution-free phase-pure α-FAPbI3 can achieve intrinsic phase stability. However, the challenging preparation of high-quality films has hindered its further development. Here, a facile synthesis of high-quality MA+ , Cs+ , Rb+ , and Br- -free phase-pure α-FAPbI3 perovskite film by a new solution modification strategy is reported. This enables the activation of lead-iodine (Pb─I) frameworks by forming the coated Pb⋯O network, thus simultaneously promoting spontaneous homogeneous nucleation and rapid phase transition from δ to α phase. As a result, the efficient and stable phase-pure α-FAPbI3 PSC is obtained through a one-step method without antisolvent treatment, with a record efficiency of 23.15% and excellent long-term operating stability for 500 h under continuous light stress.
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Affiliation(s)
- Tingting Niu
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Lingfeng Chao
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Kaiyu Wang
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Xueqin Ran
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Xiao Huang
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Changshun Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Jinpei Wang
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Deli Li
- Fujian Cross Strait Institute of Flexible Electronics (Future Technologies) Fujian Normal University Fuzhou, Fuzhou, 350117, China
| | - Zhenhuang Su
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, P. R. China
| | - Zhelu Hu
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, P. R. China
| | - Jing Zhang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
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