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Ma Z, Zhang Z, Lv X, Zhang H, Lu K, Su G, Huang B, Chen H. Dual sensitivity-enhanced microring resonance-based integrated microfluidic biosensor for Aβ 42 detection. Talanta 2024; 275:126111. [PMID: 38657362 DOI: 10.1016/j.talanta.2024.126111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 04/07/2024] [Accepted: 04/13/2024] [Indexed: 04/26/2024]
Abstract
Sensitive, accurate, and straightforward biosensors are pivotal in the battle against Alzheimer's disease, particularly in light of the escalating patient population. These biosensors enable early adjunctive diagnosis, thereby facilitating prompt intervention, alleviating socioeconomic burdens, and preserving individual well-being. In this study, we introduce the development of a highly sensitive add-drop dual-microring resonant microfluidic sensing chip boasting a sensitivity of 188.11 nm/RIU, marking a significant 20.7% enhancement over single microring systems. Leveraging ultra-thin Parylene C for streamlined antibody immobilization and non-destructive removal, this platform facilitates the precise quantification of the Alzheimer's disease biomarker Aβ42. Employing an immune sensing strategy that amplifies and captures antigen signals using Au-labeled antibodies, we achieve an exceptional limit of detection of 9.02 pg/mL. The designed microring-based microfluidic biosensor chip exhibits outstanding specificity and sensitivity for Aβ42 in serum samples, offering a promising avenue for the early adjunctive diagnosis of Alzheimer's disease.
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Affiliation(s)
- Zhengtai Ma
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Zan Zhang
- School of Electronic and Control Engineering, Chang'an University, Xi'an, China
| | - Xiaoqing Lv
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Huan Zhang
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, China
| | - Kaiwei Lu
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Guoshuai Su
- Suzhou Institute of Microelectronics and Optoelectronics Integration, Suzhou, China; Suzhou Jiwei Photoelectric Co., Ltd, Suzhou, China
| | - Beiju Huang
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China.
| | - Hongda Chen
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
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