1
|
Sherif ESM, Bahri YA, Alharbi HF, Ijaz MF. Corrosion Passivation in Simulated Body Fluid of Ti-Zr-Ta-xSn Alloys as Biomedical Materials. Materials (Basel) 2023; 16:4603. [PMID: 37444917 DOI: 10.3390/ma16134603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2023] [Revised: 06/15/2023] [Accepted: 06/21/2023] [Indexed: 07/15/2023]
Abstract
The powder metallurgy method was used to manufacture three Ti-based alloys: Ti-15%Zr-2%Ta-4%Sn (Ti-Zr-Ta-4Sn), Ti-15%Zr-2%Ta-6%Sn (Ti-Zr-Ta-6Sn), and Ti-15%Zr-2%Ta-8%Sn (Ti-Zr-Ta-8Sn). Electrochemical measurements and surface analyses were used to determine the effect of Sn concentration on the corrosion of these alloys after exposure to a simulated body fluid (SBF) solution for 1 h and 72 h. It was found that the passivation of the alloy surface significantly increased when the Sn content increased from 4% to 6% and then to 8%, which led to a significant reduction in corrosion. The impedance spectra derived from the Nyquist graphs also explained how the addition of Sn significantly improved the alloys' polarization resistances. According to the change in the chronoamperometric current at an applied anodic potential over time, the increase in Sn content within the alloy significantly reduced the currents over time, indicating that the uniform and pitting corrosion were greatly decreased. The formation of an oxide layer (TiO2), which was demonstrated by the surface morphology of the alloys after exposure to SBF solution for 72 h and corrosion at 400 mV (Ag/AgCl) for 60 min, was supported by the profile analysis obtained by an X-ray spectroscopy analyzer. It was clear from all of the findings that the tested alloys have a remarkable improvement in resistance to corrosivity when the Sn content was increased to 8%.
Collapse
Affiliation(s)
- El-Sayed M Sherif
- Center of Excellence for Research in Engineering Materials (CEREM), Deanship of Scientific Research, King Saud University, Riyadh 11421, Saudi Arabia
| | - Yassir A Bahri
- Mechanical Engineering Department, Collage of Engineering, King Saud University, Al-Riyadh 11421, Saudi Arabia
| | - Hamad F Alharbi
- Mechanical Engineering Department, Collage of Engineering, King Saud University, Al-Riyadh 11421, Saudi Arabia
| | - Muhammad Farzik Ijaz
- Mechanical Engineering Department, Collage of Engineering, King Saud University, Al-Riyadh 11421, Saudi Arabia
| |
Collapse
|
2
|
Guo J, Mao Y, Ao J, Han Y, Cao C, Liu F, Bi J, Wang S, Zhang Y. Microenvironment Created by SnSe 2 Vapor and Pre-Selenization to Stabilize the Surface and Back Contact in Kesterite Solar Cells. Small 2022; 18:e2203354. [PMID: 36180408 DOI: 10.1002/smll.202203354] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 09/11/2022] [Indexed: 06/16/2023]
Abstract
The ambient air-processed preparation of kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) thin film is highly promising for the fabrication of low-cost and eco-friendly solar cells. However, the Sn volatilization loss and formation of a thick Mo(S,Se)2 interfacial layer during the traditional selenization process pose challenges for fabricating high-efficiency CZTSSe solar cells. Here, CZTS precursors prepared by a sol-gel process in ambient air are selenized and assisted with SnSe2 vapor via one- and two-step selenization to prepare a CZTSSe absorber on a Mo film and, subsequently, solar cells. For one-step selenization, the thickness of the fine grain and Mo(S,Se)2 layers near the back contact can be significantly reduced with increasing SnSe2 vapor partial pressure in the mixed selenization atmosphere, while the device efficiency is only 7.97% due to the severe interface recombination. For two-step selenization, the desired morphology and stoichiometry of the absorber can be achieved through the assistance of Sn-poor precursors selenized with high SnSe2 vapor partial pressure to regulate the Sn content in CZTSSe, yielding the highest efficiency of 10.85%. This study improves the understanding of the key role of the microenvironment during film growth towards the production of high-efficiency thin film solar cells and other photoelectronic devices.
Collapse
Affiliation(s)
- Jiajia Guo
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Yang Mao
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Jianping Ao
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Yanchen Han
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Chun Cao
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Fangfang Liu
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Jinlian Bi
- Tianjin Key Laboratory of Film Electronic and Communication Devices School of Integrated Circuit Science and Engineering, Tianjin University of Technology, 391 Binshui West Road, Xiqing District, Tianjin, 300384, P. R. China
| | - Shenghao Wang
- Materials Genome Institute, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai, 200444, P. R. China
| | - Yi Zhang
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| |
Collapse
|
3
|
Zhang G, Zhao J, Wang P, Li X, Liu Y, Fu X. Molecular Dynamics Study on Mechanical Properties of Nanopolycrystalline Cu-Sn Alloy. Materials (Basel) 2021; 14:ma14247782. [PMID: 34947379 PMCID: PMC8703971 DOI: 10.3390/ma14247782] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 12/12/2021] [Accepted: 12/14/2021] [Indexed: 11/16/2022]
Abstract
Molecular dynamics simulation is one kinds of important methods to research the nanocrystalline materials which is difficult to be studied through experimental characterization. In order to study the effects of Sn content and strain rate on the mechanical properties of nanopolycrystalline Cu-Sn alloy, the tensile simulation of nanopolycrystalline Cu-Sn alloy was carried out by molecular dynamics in the present study. The results demonstrate that the addition of Sn reduces the ductility of Cu-Sn alloy. However, the elastic modulus and tensile strength of Cu-Sn alloy are improved with increasing the Sn content initially, but they will be reduced when the Sn content exceeds 4% and 8%, respectively. Then, strain rate ranges from 1 × 109 s-1 to 5 × 109 s-1 were applied to the Cu-7Sn alloy, the results show that the strain rate influence elastic modulus of nanopolycrystalline Cu-7Sn alloy weakly, but the tensile strength and ductility enhance obviously with increasing the strain rate. Finally, the microstructure evolution of nanopolycrystalline Cu-Sn alloy during the whole tensile process was studied. It is found that the dislocation density in the Cu-Sn alloy reduces with increasing the Sn content. However, high strain rate leads to stacking faults more easily to generate and high dislocation density in the Cu-7Sn alloy.
Collapse
|
4
|
Wang S, Gu H, Wang W, Li C, Ren LL, Wang ZB, Zhai Y, Ma P. Effect of Sn Content on the Microstructure and Properties of Wire and Arc Additive Manufactured Al-Cu Alloy Deposits. 3D Print Addit Manuf 2020; 7:28-36. [PMID: 36654879 PMCID: PMC9586221 DOI: 10.1089/3dp.2019.0176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Al-Cu-Sn alloy deposits with different Sn contents were prepared by the wire and arc additive manufacturing process. The microstructure and mechanical properties of the deposits were examined by metallography, scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and tensile tests. The results indicated that the addition of Sn significantly refined the microstructure of the deposits in their as-deposited state, and the grains were transformed from dendrites to equiaxed crystals with a uniform grain size of ∼30 μm. For the deposits with Sn ≥0.15%, the continuous and elongated θ phase on the grain boundary became block-shaped, and the size of the precipitated phase increased. After T6 heat treatment, the θ phase completely dissolved in the substrate in the deposits with Sn ≤0.1%, whereas the θ-phase solid dissolution was incomplete in the deposits with Sn ≥0.15%; the higher the Sn content, the greater the amount of θ phase remaining. After the T6 treatment, the deposits with an Sn content of 0.25% exhibited cracks distributed along the grain boundaries. The addition of Sn significantly increased the density of the θ' phase, which was diffused and uniform in size; with an increase in the Sn content, the distribution density of the θ' phase in the deposits first increased and then decreased as the peak-aging condition was reached. The addition of Sn could effectively improve the mechanical properties of the deposits, which first increased and then decreased with an increase in the Sn content. The mechanical properties of the deposits were optimal at an Sn content of 0.1%, with a tensile strength of 493 MPa, yield strength of 434 MPa, and elongation of 9.5%.
Collapse
Affiliation(s)
- Shuai Wang
- School of Metallurgy, Northeastern University, Shenyang, China
| | - HuiMin Gu
- School of Metallurgy, Northeastern University, Shenyang, China
| | - Wei Wang
- Inner Mongolia Metal Material Research Institute, Baotou, China
| | - ChengDe Li
- School of Metallurgy, Northeastern University, Shenyang, China
| | - Ling Ling Ren
- School of Metallurgy, Northeastern University, Shenyang, China
| | - Zhen Biao Wang
- Fushun Donggong Metallurgy & Materials Technology Co., Ltd., Fushun, China
| | - YuChun Zhai
- School of Metallurgy, Northeastern University, Shenyang, China
- Fushun Donggong Metallurgy & Materials Technology Co., Ltd., Fushun, China
| | - PeiHua Ma
- School of Metallurgy, Northeastern University, Shenyang, China
| |
Collapse
|