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Kim HJ, Kim DW, Lee WY, Kim K, Lee SH, Bae JH, Kang IM, Kim K, Jang J. Flexible Sol-Gel-Processed Y 2O 3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process. Materials (Basel) 2022; 15:ma15051899. [PMID: 35269129 PMCID: PMC8912058 DOI: 10.3390/ma15051899] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/30/2022] [Revised: 02/25/2022] [Accepted: 03/02/2022] [Indexed: 12/31/2022]
Abstract
Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.
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Affiliation(s)
- Hyeon-Joong Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Do-Won Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Won-Yong Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Kyoungdu Kim
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
| | - Sin-Hyung Lee
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - Jin-Hyuk Bae
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - In-Man Kang
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
| | - Kwangeun Kim
- School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Korea;
| | - Jaewon Jang
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea; (H.-J.K.); (D.-W.K.); (W.-Y.L.); (K.K.); (S.-H.L.); (J.-H.B.); (I.-M.K.)
- School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
- Correspondence:
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Han Y, Fan X, Wang H, Zhao F, Tully CG, Kong J, Yao N, Yan N. High-yield monolayer graphene grids for near-atomic resolution cryoelectron microscopy. Proc Natl Acad Sci U S A 2020; 117:1009-1014. [PMID: 31879346 PMCID: PMC6969529 DOI: 10.1073/pnas.1919114117] [Citation(s) in RCA: 68] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023] Open
Abstract
Cryogenic electron microscopy (cryo-EM) has become one of the most powerful techniques to reveal the atomic structures and working mechanisms of biological macromolecules. New designs of the cryo-EM grids-aimed at preserving thin, uniform vitrified ice and improving protein adsorption-have been considered a promising approach to achieving higher resolution with the minimal amount of materials and data. Here, we describe a method for preparing graphene cryo-EM grids with up to 99% monolayer graphene coverage that allows for more than 70% grid squares for effective data acquisition with improved image quality and protein density. Using our graphene grids, we have achieved 2.6-Å resolution for streptavidin, with a molecular weight of 52 kDa, from 11,000 particles. Our graphene grids increase the density of examined soluble, membrane, and lipoproteins by at least 5-fold, affording the opportunity for structural investigation of challenging proteins which cannot be produced in large quantity. In addition, our method employs only simple tools that most structural biology laboratories can access. Moreover, this approach supports customized grid designs targeting specific proteins, owing to its broad compatibility with a variety of nanomaterials.
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Affiliation(s)
- Yimo Han
- Department of Molecular Biology, Princeton University, Princeton, NJ 08544;
| | - Xiao Fan
- Department of Molecular Biology, Princeton University, Princeton, NJ 08544
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - Fang Zhao
- Department of Physics, Princeton University, Princeton, NJ 08544
| | | | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - Nan Yao
- PRISM Imaging and Analysis Center, Princeton University, Princeton, NJ 08544
| | - Nieng Yan
- Department of Molecular Biology, Princeton University, Princeton, NJ 08544;
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Li H, Sheng B, Wu H, Huang Y, Zhang D, Zhuang S. Ring Wrinkle Patterns with Continuously Changing Wavelength Produced Using a Controlled-Gradient Light Field. Materials (Basel) 2018; 11:E1571. [PMID: 30200395 PMCID: PMC6165544 DOI: 10.3390/ma11091571] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/07/2018] [Revised: 08/24/2018] [Accepted: 08/27/2018] [Indexed: 11/17/2022]
Abstract
We report a facile method to prepare gradient wrinkles using a controlled-gradient light field. Because of the gradient distance between the ultraviolet (UV) lamp and polydimethylsiloxane (PDMS) substrate during UV/ozone treatment, the irradiance reaching the substrate continuously changed, which was transferred into the resulting SiOx film with a varying thickness. Therefore, wrinkles with continuously changing wavelength were fabricated using this approach. It was found that the wrinkle wavelength decreased as the distance increased. We fabricated 1-D wrinkle patterns and ring wrinkles with a gradient wavelength. The ring wrinkles were prepared using radial stresses, which were achieved by pulling the center of a freely hanging PDMS film. The resulting wrinkles with changing wavelength can be used in fluid handling systems, biological templates, and optical devices.
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Affiliation(s)
- Hongye Li
- Engineering Research Center of Optical Instruments and Systems, Ministry of Education and Shanghai Key Laboratory of Modern Optical Systems, University of Shanghai for Science and Technology, Shanghai 200093, China.
| | - Bin Sheng
- Engineering Research Center of Optical Instruments and Systems, Ministry of Education and Shanghai Key Laboratory of Modern Optical Systems, University of Shanghai for Science and Technology, Shanghai 200093, China.
| | - He Wu
- Engineering Research Center of Optical Instruments and Systems, Ministry of Education and Shanghai Key Laboratory of Modern Optical Systems, University of Shanghai for Science and Technology, Shanghai 200093, China.
| | - Yuanshen Huang
- Engineering Research Center of Optical Instruments and Systems, Ministry of Education and Shanghai Key Laboratory of Modern Optical Systems, University of Shanghai for Science and Technology, Shanghai 200093, China.
| | - Dawei Zhang
- Engineering Research Center of Optical Instruments and Systems, Ministry of Education and Shanghai Key Laboratory of Modern Optical Systems, University of Shanghai for Science and Technology, Shanghai 200093, China.
| | - Songlin Zhuang
- Engineering Research Center of Optical Instruments and Systems, Ministry of Education and Shanghai Key Laboratory of Modern Optical Systems, University of Shanghai for Science and Technology, Shanghai 200093, China.
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