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Grigoryeva MS, Kutlubulatova IA, Lukashenko SY, Fronya AA, Ivanov DS, Kanavin AP, Timoshenko VY, Zavestovskaya IN. Modeling of Short-Pulse Laser Interactions with Monolithic and Porous Silicon Targets with an Atomistic-Continuum Approach. Nanomaterials (Basel) 2023; 13:2809. [PMID: 37887962 PMCID: PMC10609206 DOI: 10.3390/nano13202809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 10/15/2023] [Accepted: 10/16/2023] [Indexed: 10/28/2023]
Abstract
The acquisition of reliable knowledge about the mechanism of short laser pulse interactions with semiconductor materials is an important step for high-tech technologies towards the development of new electronic devices, the functionalization of material surfaces with predesigned optical properties, and the manufacturing of nanorobots (such as nanoparticles) for bio-medical applications. The laser-induced nanostructuring of semiconductors, however, is a complex phenomenon with several interplaying processes occurring on a wide spatial and temporal scale. In this work, we apply the atomistic-continuum approach for modeling the interaction of an fs-laser pulse with a semiconductor target, using monolithic crystalline silicon (c-Si) and porous silicon (Si). This model addresses the kinetics of non-equilibrium laser-induced phase transitions with atomic resolution via molecular dynamics, whereas the effect of the laser-generated free carriers (electron-hole pairs) is accounted for via the dynamics of their density and temperature. The combined model was applied to study the microscopic mechanism of phase transitions during the laser-induced melting and ablation of monolithic crystalline (c-Si) and porous Si targets in a vacuum. The melting thresholds for the monolithic and porous targets were found to be 0.32 J/cm2 and 0.29 J/cm2, respectively. The limited heat conduction mechanism and the absence of internal stress accumulation were found to be involved in the processes responsible for the lowering of the melting threshold in the porous target. The results of this modeling were validated by comparing the melting thresholds obtained in the simulations to the experimental values. A difference in the mechanisms of ablation of the c-Si and porous Si targets was considered. Based on the simulation results, a prediction regarding the mechanism of the laser-assisted production of Si nanoparticles with the desired properties is drawn.
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Affiliation(s)
- Maria S. Grigoryeva
- Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, 119991 Moscow, Russia; (M.S.G.); (I.A.K.); (S.Y.L.); (A.A.F.); (A.P.K.); (I.N.Z.)
| | - Irina A. Kutlubulatova
- Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, 119991 Moscow, Russia; (M.S.G.); (I.A.K.); (S.Y.L.); (A.A.F.); (A.P.K.); (I.N.Z.)
- Institute of Engineering Physics for Biomedicine (PhysBio Institute), National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Shosse 31, 115409 Moscow, Russia
| | - Stanislav Yu. Lukashenko
- Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, 119991 Moscow, Russia; (M.S.G.); (I.A.K.); (S.Y.L.); (A.A.F.); (A.P.K.); (I.N.Z.)
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky Prospect, 26, 190103 St. Petersburg, Russia
| | - Anastasia A. Fronya
- Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, 119991 Moscow, Russia; (M.S.G.); (I.A.K.); (S.Y.L.); (A.A.F.); (A.P.K.); (I.N.Z.)
- Institute of Engineering Physics for Biomedicine (PhysBio Institute), National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Shosse 31, 115409 Moscow, Russia
| | - Dmitry S. Ivanov
- Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, 119991 Moscow, Russia; (M.S.G.); (I.A.K.); (S.Y.L.); (A.A.F.); (A.P.K.); (I.N.Z.)
| | - Andrey P. Kanavin
- Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, 119991 Moscow, Russia; (M.S.G.); (I.A.K.); (S.Y.L.); (A.A.F.); (A.P.K.); (I.N.Z.)
| | - Victor Yu. Timoshenko
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, 1, 119991 Moscow, Russia;
| | - Irina N. Zavestovskaya
- Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, 119991 Moscow, Russia; (M.S.G.); (I.A.K.); (S.Y.L.); (A.A.F.); (A.P.K.); (I.N.Z.)
- Institute of Engineering Physics for Biomedicine (PhysBio Institute), National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Shosse 31, 115409 Moscow, Russia
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