Shen Q, Lin Z, Deng J, Chen H, Chen X, Tian J, Bao B, Dai P, Sun X. Effects of β-Si
3N
4 Seeds on Microstructure and Performance of Si
3N
4 Ceramics in Semiconductor Package.
Materials (Basel) 2023;
16:4461. [PMID:
37374644 DOI:
10.3390/ma16124461]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Revised: 06/05/2023] [Accepted: 06/10/2023] [Indexed: 06/29/2023]
Abstract
Among the various ceramic substrate materials, Si3N4 ceramics have demonstrated high thermal conductivity, good thermal shock resistance, and excellent corrosion resistance. As a result, they are well-suited for semiconductor substrates in high-power and harsh conditions encountered in automobiles, high-speed rail, aerospace, and wind power. In this work, Si3N4 ceramics with various ratios of α-Si3N4 and β-Si3N4 in raw powder form were prepared by spark plasma sintering (SPS) at 1650 °C for 30 min under 30 MPa. When the content of β-Si3N4 was lower than 20%, with the increase in β-Si3N4 content, the ceramic grain size changed gradually from 1.5 μm to 1 μm and finally resulted in 2 μm mixed grains. However, As the content of β-Si3N4 seed crystal increased from 20% to 50%, with the increase in β-Si3N4 content, the ceramic grain size changed gradually from 1 μm and 2 μm to 1.5 μm. Therefore, when the content of β-Si3N4 in the raw powder is 20%, the sintered ceramics exhibited a double-peak structure distribution and the best overall performance with a density of 97.5%, fracture toughness of 12.1 MPa·m1/2, and a Vickers hardness of 14.5 GPa. The results of this study are expected to provide a new way of studying the fracture toughness of silicon nitride ceramic substrates.
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