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Edri E, Armon N, Greenberg E, Moshe-Tsurel S, Lubotzky D, Salzillo T, Perelshtein I, Tkachev M, Girshevitz O, Shpaisman H. Laser Printing of Multilayered Alternately Conducting and Insulating Microstructures. ACS Appl Mater Interfaces 2021; 13:36416-36425. [PMID: 34296861 PMCID: PMC8397236 DOI: 10.1021/acsami.1c06204] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2021] [Accepted: 07/12/2021] [Indexed: 05/19/2023]
Abstract
Production of multilayered microstructures composed of conducting and insulating materials is of great interest as they can be utilized as microelectronic components. Current proposed fabrication methods of these microstructures include top-down and bottom-up methods, each having their own set of drawbacks. Laser-based methods were shown to pattern various materials with micron/sub-micron resolution; however, multilayered structures demonstrating conducting/insulating/conducting properties were not yet realized. Here, we demonstrate laser printing of multilayered microstructures consisting of conducting platinum and insulating silicon oxide layers by a combination of thermally driven reactions with microbubble-assisted printing. PtCl2 dissolved in N-methyl-2-pyrrolidone (NMP) was used as a precursor to form conducting Pt layers, while tetraethyl orthosilicate dissolved in NMP formed insulating silicon oxide layers identified by Raman spectroscopy. We demonstrate control over the height of the insulating layer between ∼50 and 250 nm by varying the laser power and number of iterations. The resistivity of the silicon oxide layer at 0.5 V was 1.5 × 1011 Ωm. Other materials that we studied were found to be porous and prone to cracking, rendering them irrelevant as insulators. Finally, we show how microfluidics can enhance multilayered laser microprinting by quickly switching between precursors. The concepts presented here could provide new opportunities for simple fabrication of multilayered microelectronic devices.
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Affiliation(s)
- Eitan Edri
- Department
of Chemistry, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Nina Armon
- Department
of Chemistry, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Ehud Greenberg
- Department
of Chemistry, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Shlomit Moshe-Tsurel
- Department
of Chemistry, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Danielle Lubotzky
- Department
of Chemistry, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Tommaso Salzillo
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 76100, Israel
| | - Ilana Perelshtein
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Maria Tkachev
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Olga Girshevitz
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
| | - Hagay Shpaisman
- Department
of Chemistry, Bar-Ilan University, Ramat Gan 5290002, Israel
- Institute
of Nanotechnology and Advanced Materials (BINA), Bar-Ilan University, Ramat
Gan 5290002, Israel
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