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Cao L, Chen Q, Zhu Y, Tong K, Li W, Ma J, Jalali M, Huang Z, Wu J, Zhai Y. Interfacial Modulation of Spin-Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe 3. ACS Appl Mater Interfaces 2024; 16:19764-19770. [PMID: 38577833 DOI: 10.1021/acsami.4c00881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/06/2024]
Abstract
Two-dimensional van der Waals (2D vdW) materials are widely used in spin-orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe3, indicating its potential applications in low-power SOT devices. Here, we study the interfacial contribution of SOTs and current-induced magnetization switching in the ZrSe3/Py (Ni80Fe20) and ZrSe3/Cu/Py heterostructures. SOT efficiencies of samples are detected by the spin-torque ferromagnetic resonance (ST-FMR), and out-of-plane damping-like torque (τB) is observed. The ratio between τB and the field-like torque (τA) decreases from 0.175 to 0.138 when inserting 1 nm Cu at the interface and then drops to 0.001 when the thickness of Cu intercalation is 2 nm, indicating that Cu intercalation inhibits the τB component of SOT. Moreover, the SOT efficiency is increased from 3.05 to 5.21, which may be attributed to the Cu intercalation being beneficial to improve the interface between Py and ZrSe3. Theoretical calculation has shown that the Cu spacer can change the conductivity of ZrSe3 from semiconductor to conductor, thereby decreasing the Schottky barrier and increasing the transmission efficiency of the spin current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy is employed to verify the current-driven magnetization switching in these structures. In comparison to the ZrSe3/Py bilayer, the critical current density of ZrSe3/Cu/Py is reduced when inserting 1 nm Cu, demonstrating the higher SOT efficiency and lower power consumption in ZrSe3/Cu/Py structures.
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Affiliation(s)
- Lulu Cao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China
| | - Qian Chen
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China
| | - Yonghui Zhu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China
| | - Kaiyu Tong
- Department of Physics, Engineering and Technology, University of York, York YO10 5DD, United Kingdom
| | - Wenjia Li
- Department of Physics, Engineering and Technology, University of York, York YO10 5DD, United Kingdom
| | - Jun Ma
- Department of Physics, Engineering and Technology, University of York, York YO10 5DD, United Kingdom
| | - Milad Jalali
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China
| | - Zhaocong Huang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China
| | - Jing Wu
- Department of Physics, Engineering and Technology, University of York, York YO10 5DD, United Kingdom
| | - Ya Zhai
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, Jiangsu 211189, People's Republic of China
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