Single-Ion Counting with an Ultra-Thin-Membrane Silicon Carbide Sensor

In recent times, ion implantation has received increasing interest for novel applications related to deterministic material doping on the nanoscale, primarily for the fabrication of solid-state quantum devices. For such applications, precise information concerning the number of implanted ions and their final position within the implanted sample is crucial. In this work, we present an innovative method for the detection of single ions of MeV energy by using a sub-micrometer ultra-thin silicon carbide sensor operated as an in-beam counter of transmitted ions. The SiC sensor signals, when compared to a Passivated Implanted Planar Silicon detector signal, exhibited a 96.5% ion-detection confidence, demonstrating that the membrane sensors can be utilized for high-fidelity ion counting. Furthermore, we assessed the angular straggling of transmitted ions due to the interaction with the SiC sensor, employing the scanning knife-edge method of a focused ion microbeam. The lateral dimension of the ion beam with and without the membrane sensor was compared to the SRIM calculations. The results were used to discuss the potential of such experimental geometry in deterministic ion-implantation schemes as well as other applications.

Tailored ion beam for precise colour centre creation

We present an invariant-based quantum control scheme leading to a highly monochromatic ion beam from a Paul trap. Our protocol is implementable by supplying the segmented electrodes in the trap with voltages of the order of volts. This mitigates the impact of fluctuations in previous designs and leads to a low-dispersion beam of ions. Moreover, our proposal does not rely on sympathetically cooling ions, which bypasses the need of loading different species in the trap-namely, the propelled ion and, e.g. a [Formula: see text] to exert sympathetic cooling-significantly incrementing the repetition rate of the launching procedure. Our scheme is based on an invariant operator linear in position and momentum, which enables us to control the average extraction energy and the outgoing momentum spread. In addition, we propose a sequential operation to tailor the transversal properties of the beam before the ejection to minimize the impact spot and to increase the lateral resolution of the implantation. This article is part of the theme issue 'Shortcuts to adiabaticity: theoretical, experimental and interdisciplinary perspectives'.