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Chen Y, Wang H, Chen H, Zhang W, Pätzel M, Han B, Wang K, Xu S, Montes-García V, McCulloch I, Hecht S, Samorì P. Li Promoting Long Afterglow Organic Light-Emitting Transistor for Memory Optocoupler Module. Adv Mater 2024:e2402515. [PMID: 38616719 DOI: 10.1002/adma.202402515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 03/19/2024] [Indexed: 04/16/2024]
Abstract
The artificial brain is conceived as advanced intelligence technology, capable to emulate in-memory processes occurring in the human brain by integrating synaptic devices. Within this context, improving the functionality of synaptic transistors to increase information processing density in neuromorphic chips is a major challenge in this field. In this article, Li-ion migration promoting long afterglow organic light-emitting transistors, which display exceptional postsynaptic brightness of 7000 cd m-2 under low operational voltages of 10 V is presented. The postsynaptic current of 0.1 mA operating as a built-in threshold switch is implemented as a firing point in these devices. The setting-condition-triggered long afterglow is employed to drive the photoisomerization process of photochromic molecules that mimic neurotransmitter transfer in the human brain for realizing a key memory rule, that is, the transition from long-term memory to permanent memory. The combination of setting-condition-triggered long afterglow with photodiode amplifiers is also processed to emulate the human responding action after the setting-training process. Overall, the successful integration in neuromorphic computing comprising stimulus judgment, photon emission, transition, and encoding, to emulate the complicated decision tree of the human brain is demonstrated.
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Affiliation(s)
- Yusheng Chen
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Hanlin Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hu Chen
- School of Physical Sciences, Great Bay University, Dongguan, 523000, China
| | - Weimin Zhang
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), KSC, Thuwal, 23955-6900, Saudi Arabia
| | - Michael Pätzel
- Department of Chemistry & Center for the Science of Materials Berlin, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489, Berlin, Germany
| | - Bin Han
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Kexin Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Shunqi Xu
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | | | - Iain McCulloch
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), KSC, Thuwal, 23955-6900, Saudi Arabia
- University of Oxford, Department of Chemistry, Oxford, OX1 3TA, UK
| | - Stefan Hecht
- Department of Chemistry & Center for the Science of Materials Berlin, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489, Berlin, Germany
- DWI - Leibniz Institute for Interactive Materials, Forckenbeckstr. 50, 52074, Aachen, Germany
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
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