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Liao Q, Wang Y, Hao M, Li B, Yang K, Ji X, Wang Z, Wang K, Chi W, Guo X, Huang W. Green-Solvent-Processable Low-Cost Fluorinated Hole Contacts with Optimized Buried Interface for Highly Efficient Perovskite Solar Cells. ACS Appl Mater Interfaces 2022; 14:43547-43557. [PMID: 36112992 DOI: 10.1021/acsami.2c10758] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Solution-processed hole contact materials, as an indispensable component in perovskite solar cells (PSCs), have been widely studied with consistent progress achieved. One bottleneck for the commercialization of PSCs is the lack of hole contact materials with high performance, cost-effective preparation, and green-solvent processability. Therefore, the development of versatile hole contact materials is of great significance. Herein, we report two novel donor-acceptor (D-A)-type hole contact molecules (FMPA-BT-CA and 2FMPA-BT-CA) with low cost and alcohol-based processability by utilizing a fluorination strategy. We showed that the fluorine atoms lead to the lowered highest occupied molecular orbital (HOMO) energy levels and larger dipole moments for FMPA-BT-CA and 2FMPA-BT-CA. Moreover, fluorination also improves the buried interfacial interaction between hole contacts and perovskite. As a result, a remarkable power conversion efficiency (PCE) of 22.37% along with good light stability could be achieved for green-solvent-processed FMPA-BT-CA-based inverted PSC devices, demonstrating the great potential of environmentally compatible hole contacts for highly efficient PSCs.
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Affiliation(s)
- Qiaogan Liao
- Department of Materials Science and Engineering, Southern University of Science and technology (SUSTech), Shenzhen, Guangdong 518055, China
| | - Yang Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian 350117, China
| | - Mengyao Hao
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Bolin Li
- Department of Materials Science and Engineering, Southern University of Science and technology (SUSTech), Shenzhen, Guangdong 518055, China
| | - Kun Yang
- Department of Materials Science and Engineering, Southern University of Science and technology (SUSTech), Shenzhen, Guangdong 518055, China
| | - Xiaofei Ji
- Department of Materials Science and Engineering, Southern University of Science and technology (SUSTech), Shenzhen, Guangdong 518055, China
| | - Zhaojin Wang
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China
| | - Kai Wang
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China
| | - Weijie Chi
- Department of Chemistry, School of Science, Hainan University, Haikou, Hainan 570228, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and technology (SUSTech), Shenzhen, Guangdong 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China
| | - Wei Huang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian 350117, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing 211800, China
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