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Tang SY, Yang CC, Su TY, Yang TY, Wu SC, Hsu YC, Chen YZ, Lin TN, Shen JL, Lin HN, Chiu PW, Kuo HC, Chueh YL. Design of Core-Shell Quantum Dots-3D WS 2 Nanowall Hybrid Nanostructures with High-Performance Bifunctional Sensing Applications. ACS Nano 2020; 14:12668-12678. [PMID: 32813498 DOI: 10.1021/acsnano.0c01264] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides (TMDCs) have recently attracted a tremendous amount of attention owing to their superior optical and electrical properties as well as the interesting and various nanostructures that are created by different synthesis processes. However, the atomic thickness of TMDCs limits the light absorption and results in the weak performance of optoelectronic devices, such as photodetectors. Here, we demonstrate the approach to increase the surface area of TMDCs by a one-step synthesis process of TMDC nanowalls from WOx into three-dimensional (3D) WS2 nanowalls. By utilizing a rapid heating and rapid cooling process, the formation of 3D nanowalls with a height of approximately 150 nm standing perpendicularly on top of the substrate can be achieved. The combination of core-shell colloidal quantum dots (QDs) with three different emission wavelengths and 3D WS2 nanowalls further improves the performance of WS2-based photodetector devices, including a photocurrent enhancement of 320-470% and shorter response time. The significant results of the core-shell QD-WS2 hybrid devices can be contributed by the high nonradiative energy transfer efficiency between core-shell QDs and the nanostructured material, which is caused by the spectral overlap between the emission of core-shell QDs and the absorption of WS2. Besides, outstanding NO2 gas-sensing performance of core-shell QDs/WS2 devices can be achieved with an extremely low detection limit of 50 ppb and a fast response time of 26.8 s because of local p-n junctions generated by p-type 3D WS2 nanowalls and n-type core-shell CdSe-ZnS QDs. Our work successfully reveals the energy transfer phenomenon in core-shell QD-WS2 hybrid devices and shows great potential in commercial multifunctional sensing applications.
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Affiliation(s)
- Shin-Yi Tang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chun-Chuan Yang
- Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Teng-Yu Su
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shu-Chi Wu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Chieh Hsu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Ze Chen
- Department of Material Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Tzu-Neng Lin
- Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
| | - Ji-Lin Shen
- Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
| | - Heh-Nan Lin
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Wen Chiu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hao-Chung Kuo
- Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
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Han Y, Huang D, Ma Y, He G, Hu J, Zhang J, Hu N, Su Y, Zhou Z, Zhang Y, Yang Z. Design of Hetero-Nanostructures on MoS 2 Nanosheets To Boost NO 2 Room-Temperature Sensing. ACS Appl Mater Interfaces 2018; 10:22640-22649. [PMID: 29896961 DOI: 10.1021/acsami.8b05811] [Citation(s) in RCA: 67] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Molybdenum disulfide (MoS2), as a promising gas-sensing material, has gained intense interest because of its large surface-to-volume ratio, air stability, and various active sites for functionalization. However, MoS2-based gas sensors still suffer from low sensitivity, slow response, and weak recovery at room temperature, especially for NO2. Fabrication of heterostructures may be an effective way to modulate the intrinsic electronic properties of MoS2 nanosheets (NSs), thereby achieving high sensitivity and excellent recovery properties. In this work, we design a novel p-n hetero-nanostructure on MoS2 NSs using interface engineering via a simple wet chemical method. After surface modification with zinc oxide nanoparticles (ZnO NPs), the MoS2/ZnO hetero-nanostructure is endowed with an excellent response (5 ppm nitrogen dioxide, 3050%), which is 11 times greater than that of pure MoS2 NSs. To the best of our knowledge, such a response value is much higher than the response values reported for MoS2 gas sensors. Moreover, the fabricated hetero-nanostructure also improves recoverability to more than 90%, which is rare for room-temperature gas sensors. Our optimal sensor also possesses the characteristics of an ultrafast response time of 40 s, a reliable long-term stability within 10 weeks, an excellent selectivity, and a low detection concentration of 50 ppb. The enhanced sensing performances of the MoS2/ZnO hetero-nanostructure can be ascribed to unique 2D/0D hetero-nanostructures, synergistic effects, and p-n heterojunctions between ZnO NPs and MoS2 NSs. Such achievements of MoS2/ZnO hetero-nanostructure sensors imply that it is possible to use this novel nanostructure in ultrasensitive sensor applications.
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Affiliation(s)
- Yutong Han
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Da Huang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Yujie Ma
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Guili He
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Jun Hu
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Jing Zhang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Nantao Hu
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Yanjie Su
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Zhihua Zhou
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Yafei Zhang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
| | - Zhi Yang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering , Shanghai Jiao Tong University , Shanghai 200240 , People's Republic of China
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