Co─Mn Bimetallic Nanowires by Interfacial Modulation with/without Vacancy Filling as Active and Durable Electrocatalysts for Water Splitting

Active and stable nonnoble electrocatalysts for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) are required for water splitting by sustainable electricity. Here, Mn bonded with O and P is incorporated to modulate Co3S4 and Co2P respectively to enhance the catalytic activity and extend the catalyst lifetime. Mn3O4 adjusts the electronic structure of Co3S4 and Co atom fills the oxygen vacancy in Mn3O4. The interfacial interaction endows Co3S4/Mn3O4 to a lower reaction barrier due to ideal binding energies for OER intermediates. Structure stability of active sites and enhanced Co─S bonds by Operando Raman spectroscopy and theoretical calculations reduce the dissolution of Co3S4/Mn3O4, resulting in a lifetime of 500 h at 50 mA cm-2 for OER. The modulation of Co2P by MnP weakens the interaction between Co sites and adsorbed H*, achieving a high activity under a large current for HER. The assembled electrolyzer affords 50 mA cm-2 at 1.58 V and exhibits a lifetime of 350 h at 50 mA cm-2. The calculations disclose the electron interaction for the activity and stability, as well as the enhanced conductivity. The findings develop new avenues toward promoting catalytic activity and stability, making Co─Mn bimetallic nanowires efficient electrocatalysts for nonnoble water electrolyzers.

N-Type Self-Doped Hyperbranched Conjugated Polyelectrolyte as Electron Transport Layer for Efficient Nonfullerene Organic Solar Cells

The electron transport layer (ETL) exerts a dramatic influence on the power conversion efficiency (PCE) of the nonfullerene organic solar cells (NOSCs). Currently, the majority of the organic ETLs possess a relatively poor conductivity, which is not conducive to carrier transport and collection. Herein, we design and develop a novel hyperbranched conjugated polyelectrolyte (CPE) based on n-type perylene diimide (PDI) as the center core and quaternary ammonium salt as the side polar groups. The lone pair electrons of the nitrogen atoms can transfer to the electron deficient PDI core and endow the molecule with an efficient n-type self-doping effect. Moreover, the hyperbranched structure makes the molecule functionalized with more side polar groups, favoring forming more dipoles and stronger dipole moments. Therefore, the CPE PTPAPDINO possesses a high conductivity and can notably decrease the work function (WF) of the electrode, contributing to the carrier transport and collection of the device. The NOSC with PTPAPDINO as ETL delivers an excellent PCE of 15.62%, which is even superior to the device using the classical PDINO ETL. Moreover, the PCE can retain 82.6% of the optimal device when the thickness has been increased to 28 nm. These results manifest that it is a feasible strategy to design an n-type self-doping hyperbranched CPE as efficient ETL, and PTPAPDINO is a promising alternative ETL for high performance NOSCs.

Insights into Growth-Oriented Interfacial Modulation within Semiconductor Multilayers

Interfacial engineering plays a crucial role in regulating the quality and property of heterogeneous structures, especially for nanometer-scaled devices. However, traditional methods for interfacial modulation (IFM) generally treat all the interfaces uniformly, neglecting the inherent disparities of interfaces like their growth sequence. Herein, it is found that the growth-oriented characteristic of IFM strongly determines the main regions where the modulation takes effect. Specifically, in a semiconductor quantum well structure, the arsenic atoms modulated at the well-on-barrier (WoB) interface tend to diffuse into and thus affect the next-grown well layer. In contrast, the arsenic atoms introduced at the barrier-on-well (BoW) interface mainly take effect within the next-grown barrier layer. According to theoretical simulations and electron holography (EH) experiments, the depth of quantum wells and the height of potential barriers are extended by introducing arsenic atoms at WoB and BoW interfaces, respectively. Resultantly, while modulating at the BoW interface has little impact on the photoluminescence (PL) spectrum, applying IFM at the WoB interface could dramatically improve the luminescent intensity (about 30%), which demonstrates the impact of the growth-oriented characteristic. Furthermore, in situ bias EH results indicate that IFM at the WoB interface helps to suppress the quantum-confined Stark effect.