1
|
Zhao JS, Mu YF, Wu LY, Luo ZM, Velasco L, Sauvan M, Moonshiram D, Wang JW, Zhang M, Lu TB. Directed Electron Delivery from a Pb-Free Halide Perovskite to a Co(II) Molecular Catalyst Boosts CO 2 Photoreduction Coupled with Water Oxidation. Angew Chem Int Ed Engl 2024; 63:e202401344. [PMID: 38422378 DOI: 10.1002/anie.202401344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 02/27/2024] [Accepted: 02/29/2024] [Indexed: 03/02/2024]
Abstract
The development of high-performance photocatalytic systems for CO2 reduction is appealing to address energy and environmental issues, while it is challenging to avoid using toxic metals and organic sacrificial reagents. We here immobilize a family of cobalt phthalocyanine catalysts on Pb-free halide perovskite Cs2AgBiBr6 nanosheets with delicate control on the anchors of the cobalt catalysts. Among them, the molecular hybrid photocatalyst assembled by carboxyl anchors achieves the optimal performance with an electron consumption rate of 300±13 μmol g-1 h-1 for visible-light-driven CO2-to-CO conversion coupled with water oxidation to O2, over 8 times of the unmodified Cs2AgBiBr6 (36±8 μmol g-1 h-1), also far surpassing the documented systems (<150 μmol g-1 h-1). Besides the improved intrinsic activity, electrochemical, computational, ex-/in situ X-ray photoelectron and X-ray absorption spectroscopic results indicate that the electrons photogenerated at the Bi atoms of Cs2AgBiBr6 can be directionally transferred to the cobalt catalyst via the carboxyl anchors which strongly bind to the Bi atoms, substantially facilitating the interfacial electron transfer kinetics and thereby the photocatalysis.
Collapse
Affiliation(s)
- Jin-Shuang Zhao
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, 300384, Tianjin, China
| | - Yan-Fei Mu
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, 300384, Tianjin, China
| | - Li-Yuan Wu
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, 300384, Tianjin, China
| | - Zhi-Mei Luo
- School of Chemical Engineering and Technology, Sun Yat-sen University, 519082, Zhuhai, China
| | - Lucia Velasco
- Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz, 3, 28049, Madrid, Spain
| | - Maxime Sauvan
- Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz, 3, 28049, Madrid, Spain
| | - Dooshaye Moonshiram
- Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz, 3, 28049, Madrid, Spain
| | - Jia-Wei Wang
- School of Chemical Engineering and Technology, Sun Yat-sen University, 519082, Zhuhai, China
| | - Min Zhang
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, 300384, Tianjin, China
| | - Tong-Bu Lu
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, 300384, Tianjin, China
| |
Collapse
|
2
|
Li Y, Zhou J, Tian Y, Wei Z, Shen G. 2D Ruddlesden-Popper Sn-Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging. Small Methods 2024; 8:e2300026. [PMID: 37035949 DOI: 10.1002/smtd.202300026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Revised: 02/28/2023] [Indexed: 06/19/2023]
Abstract
2D Ruddlesden-Popper Sn-based perovskite has excellent optoelectronic properties and weak halide ion migration characteristics, making it an ideal candidate for weak light detection, which has great potential in light communication, and medical applications. Although Sn-based perovskite photodetectors are developed, weak light detection is not demonstrated yet. Herein, a high-performance self-powered photodetector with the capability to detect ultra-weak light signals is designed based on vertical PEA2 SnI4 /Si nanowires heterojunction. Due to the low dark current and high light absorption efficiency, the devices present a remarkable responsivity of 42.4 mA W-1 , a high detectivity of 8 × 1011 Jones, and an ultralow noise current of 2.47 × 10-13 A Hz-1/2 . Especially, the device exhibits a high on-off current ratio of 18.6 at light signals as low as 4.60 nW cm-2 , revealing the capacity to detect ultra-weak light. The device is applied as a signal receiver and realized image transmission in light communication system. Moreover, high-resolution reflection imaging and multispectral imaging are obtained using the device as the sensor in the imaging system. These results reveal that 2D PEA2 SnI4 -based self-powered photodetectors with low-noise current possess enormous potential in future weak light detection.
Collapse
Affiliation(s)
- Ying Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jingshu Zhou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Yongzhi Tian
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| |
Collapse
|
3
|
Qi F, Pu Y, Wu D, Tang X, Huang Q. Recent Advances and Future Perspectives of Lead-Free Halide Perovskites for Photocatalytic CO 2 Reduction. CHEM REC 2023; 23:e202300078. [PMID: 37229755 DOI: 10.1002/tcr.202300078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 05/04/2023] [Indexed: 05/27/2023]
Abstract
It is still challenging to design and develop the state-of-the-art photocatalysts toward CO2 photoreduction. Enormous researchers have focused on the halide perovskites in the photocatalytic field for CO2 photoreduction, due to their excellent optical and physical properties. The toxicity of lead-based halide perovskites prevents their large-scale applications in photocatalytic fields. In consequence, lead-free halide perovskites (LFHPs) without the toxicity become the promising alternatives in the photocatalytic application for CO2 photoreduction. In recent years, the rapid advances of LFHPs have offer new chances for the photocatalytic CO2 reduction of LFHPs. In this review, we summarize not only the structures and properties of A2 BX6 , A2 B(I)B(III)X6 , and A3 B2 X9 -type LFHPs but also their recent progresses on the photocatalytic CO2 reduction. Furthermore, we also point out the opportunities and perspectives to research LFHPs photocatalysts for CO2 photoreduction in the future.
Collapse
Affiliation(s)
- Fei Qi
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
| | - Yayun Pu
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
| | - Daofu Wu
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China
| | - Xiaosheng Tang
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing, 400044, China
| | - Qiang Huang
- School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China
| |
Collapse
|
4
|
Li Y, Wang J, Yang Q, Shen G. Flexible Artificial Optoelectronic Synapse based on Lead-Free Metal Halide Nanocrystals for Neuromorphic Computing and Color Recognition. Adv Sci (Weinh) 2022; 9:e2202123. [PMID: 35661449 PMCID: PMC9353487 DOI: 10.1002/advs.202202123] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Revised: 05/14/2022] [Indexed: 05/04/2023]
Abstract
Optoelectronic synapses combining optical-sensing and synaptic functions are playing an increasingly vital role in the neuromorphic computing systems development, which can efficiently process visual information and complex recognition, memory, and learning. Metal halides are considered promising candidates for synaptic devices due to their excellent optoelectronic properties. However, the toxicity of lead and the further development of device functions are the recognized problems at present. Herein, a flexible optoelectronic synapses system based on high-quality lead-free Cs3 Bi2 I9 nanocrystals is demonstrated, in which the carrier confinement caused by the band mismatching between the Cs3 Bi2 I9 and the organic semiconductor layer provides the possibility to simulate synaptic behaviors. The synaptic functions including long/short-term memory and learning-forgetting-relearning are demonstrated in this device and visual perception, visual memory, and color recognition functions are successfully implemented. Additionally, the flexible device exhibits excellent robustness and can realize imaging of light distribution under curved hemispheres similar to the human eye. Finally, through the simulation based on an artificial neural network algorithm, the device successfully realizes the high-precision recognition of handwritten digital images and possesses a strong fault tolerant capability even in bending states. These results are expected to drive the practical progress of metal halide for neuromorphic computing.
Collapse
Affiliation(s)
- Ying Li
- State Key Laboratory for Superlattices and MicrostructuresInstitute of Semiconductors, Chinese Academy of SciencesBeijing100083China
| | - Jiahui Wang
- Department of Chemistryand Laboratory of Nanomaterials for Energy ConversionUniversity of Science and Technology of ChinaHefei230026P. R. China
| | - Qing Yang
- Department of Chemistryand Laboratory of Nanomaterials for Energy ConversionUniversity of Science and Technology of ChinaHefei230026P. R. China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and MicrostructuresInstitute of Semiconductors, Chinese Academy of SciencesBeijing100083China
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
| |
Collapse
|
5
|
Han JS, Le QV, Choi J, Kim H, Kim SG, Hong K, Moon CW, Kim TL, Kim SY, Jang HW. Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories. ACS Appl Mater Interfaces 2019; 11:8155-8163. [PMID: 30698005 DOI: 10.1021/acsami.8b15769] [Citation(s) in RCA: 41] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current-voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (<0.15 V). In contrast, the Au TE devices have interface-type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migration of defects in HPs under applied electric fields. These distinct mechanisms may permit the opportunity to design devices for specific purposes. This work will pave the way for lead-free all-inorganic HP-based nonvolatile memory for commercial application in HP-based devices.
Collapse
Affiliation(s)
- Ji Su Han
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Quyet Van Le
- School of Chemical Engineering and Materials Science , Chung-Ang University , Seoul 06974 , Republic of Korea
- Institute of Research and Development , Duy Tan University , Da Nang 550000 , Vietnam
| | - Jaeho Choi
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Hyojung Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Sun Gil Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Cheon Woo Moon
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Taemin Ludvic Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| | - Soo Young Kim
- School of Chemical Engineering and Materials Science , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials , Seoul National University , Seoul 08826 , Republic of Korea
| |
Collapse
|