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Bah TM, Didenko S, Zhou D, Zhu T, Ikzibane H, Monfray S, Skotnicki T, Dubois E, Robillard JF. A CMOS compatible thermoelectric device made of crystalline silicon membranes with nanopores. Nanotechnology 2022; 33:505403. [PMID: 36027727 DOI: 10.1088/1361-6528/ac8d12] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Accepted: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Herein, we report the use of nanostructured crystalline silicon as a thermoelectric material and its integration into thermoelectric devices. The proof-of-concept relies on the partial suppression of lattice thermal conduction by introducing pores with dimensions scaling between the electron mean free path and the phonon mean free path. In other words, we artificially aimed at the well-known 'electron crystal and phonon glass' trade-off targeted in thermoelectricity. The devices were fabricated using CMOS-compatible processes and exhibited power generation up to 5.5 mW cm-2under a temperature difference of 280 K. These numbers demonstrate the capability to power autonomous devices with environmental heat sources using silicon chips of centimeter square dimensions. We also report the possibility of using the developed devices for integrated thermoelectric cooling.
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Affiliation(s)
- Thierno-Moussa Bah
- STMicroelectronics-850 rue jean Monnet F-38920 Crolles, France
- Univ. Lille, CNRS, Centrale Lille, Junia, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN-Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
| | - Stanislav Didenko
- Univ. Lille, CNRS, Centrale Lille, Junia, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN-Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
| | - Di Zhou
- Univ. Lille, CNRS, Centrale Lille, Junia, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN-Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
| | - Tianqi Zhu
- Univ. Lille, CNRS, Centrale Lille, Junia, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN-Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
| | - Hafsa Ikzibane
- Univ. Lille, CNRS, Centrale Lille, Junia, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN-Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
| | | | - Thomas Skotnicki
- Warsaw University of Technology, Centre for Advanced Materials and Technologies CEZAMAT, ul. Poleczki 19, 02-822 Warsaw, Poland
- Warsaw University of Technology, Faculty of Electronics and Information Technology, Institute of Microelectronics and Optoelectronics, ul. Koszykowa 75, 00-662 Warsaw, Poland
| | - Emmanuel Dubois
- Univ. Lille, CNRS, Centrale Lille, Junia, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN-Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
| | - Jean-François Robillard
- Univ. Lille, CNRS, Centrale Lille, Junia, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN-Institut d'Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
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