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Vetrova N, Kuimov E, Sinyakin V, Meshkov S, Makeev M, Shashurin V. Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel. Sensors (Basel) 2023; 23:7977. [PMID: 37766032 PMCID: PMC10536889 DOI: 10.3390/s23187977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Revised: 09/08/2023] [Accepted: 09/11/2023] [Indexed: 09/29/2023]
Abstract
This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.
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Affiliation(s)
- Natalia Vetrova
- Research Institute of Radio Electronics and Laser Technology, Bauman Moscow State Technical University, 105005 Moscow, Russia; (E.K.); (V.S.); (S.M.); (M.M.); (V.S.)
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Zhang Q, Ti Z, Zhu Y, Zhang Y, Cao Y, Li S, Wang M, Li D, Zou B, Hou Y, Wang P, Tang G. Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu 2Te Nanocrystals and Resonant Level Doping. ACS Nano 2021; 15:19345-19356. [PMID: 34734696 DOI: 10.1021/acsnano.1c05650] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm2 V-1 s-1 due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge1.04-x-yInxCuyTe series. Moreover, we introduce Cu2Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu2Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m-1 K-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge0.9In0.015Cu0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.
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Affiliation(s)
- Qingtang Zhang
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhuoyang Ti
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Yuelei Zhu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and Collaborative, Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yongsheng Zhang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Yang Cao
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shuang Li
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Meiyu Wang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and Collaborative, Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Di Li
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Bo Zou
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yunxiang Hou
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and Collaborative, Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Guodong Tang
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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Guo F, Cui B, Geng H, Zhang Y, Wu H, Zhang Q, Yu B, Pennycook SJ, Cai W, Sui J. Simultaneous Boost of Power Factor and Figure-of-Merit in In-Cu Codoped SnTe. Small 2019; 15:e1902493. [PMID: 31338961 DOI: 10.1002/smll.201902493] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2019] [Revised: 06/28/2019] [Indexed: 06/10/2023]
Abstract
Significantly enhanced thermoelectric performance is achieved for eco-friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of ≈29 µW cm-1 K-2 at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu2 Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of ≈1.55 at 873 K.
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Affiliation(s)
- Fengkai Guo
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
| | - Bo Cui
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
| | - Huiyuan Geng
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
| | - Yang Zhang
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Qian Zhang
- Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong, 518055, China
| | - Bo Yu
- Ningbo Fengcheng Advanced Energy Materials Research Institute, Ningbo, Zhejiang, 315500, China
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Wei Cai
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
| | - Jiehe Sui
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
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