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Peng M, Nan C, Wang D, Cao M, Zhang L, Liu L, Liu C, Fang D, Zhang Y, Zhai Y, Li Y. Suppression of Secondary Electron Emission from Nickel Surface by Graphene Composites Based on First-Principles Method. Nanomaterials (Basel) 2023; 13:2550. [PMID: 37764579 PMCID: PMC10538101 DOI: 10.3390/nano13182550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2023] [Revised: 09/03/2023] [Accepted: 09/10/2023] [Indexed: 09/29/2023]
Abstract
Secondary electron emission (SEE) is a fundamental phenomenon of particle/surface interaction, and the multipactor effect induced by SEE can result in disastrous impacts on the performance of microwave devices. To suppress the SEE-induced multipactor, an Ni (111) surface covered with a monolayer of graphene was proposed and studied theoretically via the density functional theory (DFT) method. The calculation results indicated that redistribution of the electron density at the graphene/Ni (111) interface led to variations in the work function and the probability of SEE. To validate the theoretical results, experiments were performed to analyze secondary electron yield (SEY). The measurements showed a significant decrease in the SEY on an Ni (111) surface covered with a monolayer of graphene, accompanied by a decrease in the work function, which is consistent with the statistical evidence of a strong correlation between the work function and SEY of metals. A discussion was given on explaining the experimental phenomenon using theoretical calculation results, where the empty orbitals lead to an electron trapping effect, thereby reducing SEY.
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Affiliation(s)
- Min Peng
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chang Nan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Dawei Wang
- State Key Laboratory for Mechanical Behavior of Materials, School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Meng Cao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Liang Zhang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Laijun Liu
- Key Laboratory of Nonferrous Materials and New Processing Technology, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
| | - Chunliang Liu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Dangqi Fang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yiqi Zhang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yonggui Zhai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yongdong Li
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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Peng M, Lin S, Zhang C, Liang H, Liu C, Cao M, Hu W, Zhai Y, Li Y. Effect of the Surface Morphology of Porous Coatings on Secondary Electron Yield of Metal Surface. Materials (Basel) 2022; 15:ma15124322. [PMID: 35744380 PMCID: PMC9231154 DOI: 10.3390/ma15124322] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/15/2022] [Revised: 06/15/2022] [Accepted: 06/16/2022] [Indexed: 11/27/2022]
Abstract
Surface roughening is an important material surface treatment technique, and it is particularly useful for use in secondary electron yield (SEY) suppression on metal surfaces. Porous structures produced via roughening on coatings have been confirmed to reduce SEY, but the regulation strategy and the influence of process parameters both remain unclear in the practical fabrication of effective porous structures. In this paper, the effect of the surface morphology of porous coatings on the SEY of aluminum alloy substrates was studied. Surface characterization and SEY measurements were carried out for samples with a specific process technique on their surfaces. An exponential fitting model of the correlation between surface roughness and the peak values of SEY curves, δm, was summarized. Furthermore, an implementation strategy to enable low surface SEY was achieved from the analysis of the effect of process parameters on surface morphology formation. This work will aid our understanding of the effect of the irregular surface morphology of porous coatings on SEY, thereby revealing low-cost access to the realization of an easy-to-scale process that enables low SEY.
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Affiliation(s)
- Min Peng
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (M.P.); (S.L.); (C.L.); (M.C.); (W.H.); (Y.Z.)
| | - Shu Lin
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (M.P.); (S.L.); (C.L.); (M.C.); (W.H.); (Y.Z.)
| | - Chuxian Zhang
- Beijing Institute of Aerospace Micro-Electromechanical Technology, China Research Institute of Aerospace Electronic Technology, Beijing 100094, China;
| | - Haifeng Liang
- Key Laboratory for Optical Measurement and Thin Films of Shaanxi Province, Xi’an Technological University, Xi’an 710032, China;
| | - Chunliang Liu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (M.P.); (S.L.); (C.L.); (M.C.); (W.H.); (Y.Z.)
| | - Meng Cao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (M.P.); (S.L.); (C.L.); (M.C.); (W.H.); (Y.Z.)
| | - Wenbo Hu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (M.P.); (S.L.); (C.L.); (M.C.); (W.H.); (Y.Z.)
| | - Yonggui Zhai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (M.P.); (S.L.); (C.L.); (M.C.); (W.H.); (Y.Z.)
| | - Yongdong Li
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China; (M.P.); (S.L.); (C.L.); (M.C.); (W.H.); (Y.Z.)
- Correspondence:
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