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Shi X, Gao J, Qiu S, Chang Y, Zhao L, Fu ZG, Zhao J, Zhang P. Stability and superconductivity of freestanding two-dimensional transition metal boridene: M 4/3B 2. J Phys Condens Matter 2023; 36:085602. [PMID: 37939399 DOI: 10.1088/1361-648x/ad0ace] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 11/08/2023] [Indexed: 11/10/2023]
Abstract
The small atomic mass of boron indicates strong electron-phonon coupling (EPC), so it may have a brilliant performance in superconductivity. Recently, a new 2D boride sheet with ordered metal vacancies and surface terminals (Mo4/3B2-x) was realized in experiments (Zhouet al2021Science373801). Here, the 2D monolayer freestanding Mo4/3B2is evidenced to be thermodynamically stable. Through electronic structure, phonon spectrum and EPC, monolayer Mo4/3B2is found to be an intrinsic phonon-mediated superconductor. The superconducting transition temperature (Tc) is determined to be 4.06 K by the McMillian-Allen-Dynes formula. Remarkably, theTcof monolayer Mo4/3B2can be increased to 6.78 K with an appropriate biaxial tensile strain (+5%). Moreover, we predict that other transition metal replacing Mo atoms is also stable and retaining the superconductivity. Such as monolayer W4/3B2is also a superconductor with theTcof 2.37 K. Our research results enrich the database of 2D monolayer superconductors and boron-related formed materials science.
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Affiliation(s)
- Xiaoran Shi
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Junfeng Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Shi Qiu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Yuan Chang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Luneng Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Zhen-Guo Fu
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China
| | - Ping Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China
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Singh G, Lesne E, Winkler D, Claeson T, Bauch T, Lombardi F, Caviglia AD, Kalaboukhov A. Nanopatterning of Weak Links in Superconducting Oxide Interfaces. Nanomaterials (Basel) 2021; 11:398. [PMID: 33557305 PMCID: PMC7914727 DOI: 10.3390/nano11020398] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Revised: 01/22/2021] [Accepted: 01/28/2021] [Indexed: 11/16/2022]
Abstract
The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30-100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.
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Affiliation(s)
- Gyanendra Singh
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands; (E.L.); (A.D.C.)
| | - Dag Winkler
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Tord Claeson
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Thilo Bauch
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Floriana Lombardi
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Andrea D. Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands; (E.L.); (A.D.C.)
| | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
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Abstract
Appearance of disorder is commonly known as detrimental to two-dimensional (2D) superconductivity, and typically results in decrement of the critical transition temperature ( Tc). Herein, an anomalous enhancement of superconductivity was observed in TaS2 monolayer with function of disorder induced by structural defect. Owing to controlled pore density by acid concentration during chemical exfoliation, the disorder level in TaS2 framework can be effectively regulated. Dome-shaped behavior was uncovered in disorder dependence of superconductivity toward the chemically functionalized TaS2 monolayers, with Tc enhanced from 2.89 to 3.61 K when below critical disorder level. The disorder-engineered Tc enhancement, which distinctly differs from monotonic decrement in deposited 2D superconductors, can be ascribed to the increment of carrier density induced by Ta atom absence. The exotic superconducting enhancement would give help to deeply understand the correlation between superconductivity and disorder in 2D system.
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Affiliation(s)
- Jing Peng
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Zhi Yu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Jiajing Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Yuan Zhou
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Zejun Li
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Jiyin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of Chinese Academy of Science (CAS), and CAS Key Laboratory of Mechanical Behavior and Design of Materials , University of Science & Technology of China , Hefei 230026 , PR China
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Wang L, Xu C, Liu Z, Chen L, Ma X, Cheng HM, Ren W, Kang N. Magnetotransport Properties in High-Quality Ultrathin Two-Dimensional Superconducting Mo2C Crystals. ACS Nano 2016; 10:4504-4510. [PMID: 27065100 DOI: 10.1021/acsnano.6b00270] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ultrathin transition metal carbides are a class of developing two-dimensional (2D) materials with superconductivity and show great potentials for electrical energy storage and other applications. Here, we report low-temperature magnetotransport measurements on high-quality ultrathin 2D superconducting α-Mo2C crystals synthesized by a chemical vapor deposition method. The magnetoresistance curves exhibit reproducible oscillations at low magnetic fields for temperature far below the superconducting transition temperature of the crystals. We interpret the oscillatory magnetoresistance as a consequence of screening currents circling around the boundary of triangle-shaped terraces found on the surface of ultrathin Mo2C crystals. As the sample thickness decreases, the Mo2C crystals exhibit negative magnetoresistance deep in the superconducting transition regime, which reveals strong phase fluctuations of the superconducting order parameters associated with the superconductor-insulator transition. Our results demonstrate that the ultrathin superconducting Mo2C crystals provide an interesting system for studying rich transport phenomena in a 2D crystalline superconductor with enhanced quantum fluctuations.
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Affiliation(s)
- Libin Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China
| | - Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China
| | - Xiuliang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016, China
| | - Ning Kang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
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