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Li L, Fang X, Zhang Z, Yang Q, Wang F, Li M, Zhu R, Wang L, Zhu Y, Miao X, Lu Y, Shi J, Wu Y, Liu G, Fang Y, Tian H, Ren Z, Yang D, Han G. Lattice-Gradient Perovskite KTaO 3 Films for an Ultrastable and Low-Dose X-Ray Detector. Adv Mater 2023; 35:e2211026. [PMID: 37796177 DOI: 10.1002/adma.202211026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Revised: 09/25/2023] [Indexed: 10/06/2023]
Abstract
Conventional indirect X-ray detectors employ scintillating phosphors to convert X-ray photons into photodiode-detectable visible photons, leading to low conversion efficiencies, low spatial resolutions, and optical crosstalk. Consequently, X-ray detectors that directly convert photons into electric signals have long been desired for high-performance medical imaging and industrial inspection. Although emerging hybrid inorganic-organic halide perovskites, such as CH3 NH3 PbI3 and CH3 NH3 PbBr3 , exhibit high sensitivity, they have salient drawbacks including structural instability, ion motion, and the use of toxic Pb. Here, this work reports an ultrastable, low-dose X-ray detector comprising KTaO3 perovskite films epitaxially grown on a Nb-doped strontium titanate substrate using a low-cost solution method. The detector exhibits a stable photocurrent under high-dose irradiation, high-temperature (200 °C), and aqueous conditions. Moreover, the prototype KTaO3 -film-based detector exhibits a 150-fold higher sensitivity (3150 µC Gyair -1 cm-2 ) and 150-fold lower detection limit (<40 nGyair s-1 ) than those of commercial α-Se-based direct detectors. Systematic investigations reveal that the high stability of the detector originates from the strong covalent bonds within the KTaO3 film, whereas the low detection limit is due to a lattice-gradient-driven built-in electric field and the high insulating property of KTaO3 film. This study unveils a new path toward the fabrication of green, stable, and low-dose X-ray detectors using oxide perovskite films, which have significant application potential in medical imaging and security operations.
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Affiliation(s)
- Liqi Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xuchao Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zijun Zhang
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Qian Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Fei Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Menglu Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Ruixue Zhu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Lixiang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yihan Zhu
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry, Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Xiaohe Miao
- Instrumentation and Service Center for Physical Sciences, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yangfan Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Junhui Shi
- Research Center for Humanoid Sensing, Zhejianglab, Hangzhou, 311100, China
| | - Yongjun Wu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Gang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - He Tian
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhaohui Ren
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Humanoid Sensing, Zhejianglab, Hangzhou, 311100, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, 030024, China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Gaorong Han
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Ningbo Campus, Zhejiang University, Zhejiang, 315100, China
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Li S, Li M, Chen L, Xu X, Cui A, Zhou X, Jiang K, Shang L, Li Y, Zhang J, Zhu L, Hu Z, Chu J. Ultra-Stable, Endurable, and Flexible Sb 2Te xSe 3-x Phase Change Devices for Memory Application and Wearable Electronics. ACS Appl Mater Interfaces 2022; 14:45600-45610. [PMID: 36178431 DOI: 10.1021/acsami.2c13792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Flexible memory and wearable electronics represent an emerging technology, thanks to their reliability, compatibility, and superior performance. Here, an Sb2TexSe3-x (STSe) phase change material was grown on flexible mica, which not only exhibited superior nature in thermal stability for phase change memory application but also revealed novel function performance in wearable electronics, thanks to its excellent mechanical reliability and endurance. The thermal stability of Sb2Te3 was improved obviously with the crystallization temperature elevated 60 K after Se doping, for the enhanced charge localization and stronger bonding energy, which was validated by the Vienna ab initio simulation package calculations. Based on the ultra-stability of STSe, the STSe-based phase change memory shows 65 000 reversible phase change ability. Moreover, the assembled flexible device can show real-time monitoring and recoverability response in sensing human activities in different parts of the body, which proves its effective reusability and potential as wearable electronics. Most importantly, the STSe device presents remarkable working reliability, reflected by excellent endurance over 100 s and long retention over 100 h. These results paved a novel way to utilize STSe phase change materials for flexible memory and wearable electronics with extreme thermal and mechanical stability and brilliant performance.
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Affiliation(s)
- Shubing Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Ming Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Li Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Xionghu Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Xin Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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Bustamante Rivera YY, Brütting C, Schmidt C, Volkmer I, Staege MS. Endogenous Retrovirus 3 - History, Physiology, and Pathology. Front Microbiol 2018; 8:2691. [PMID: 29379485 PMCID: PMC5775217 DOI: 10.3389/fmicb.2017.02691] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2017] [Accepted: 12/26/2017] [Indexed: 01/05/2023] Open
Abstract
Endogenous viral elements (EVE) seem to be present in all eukaryotic genomes. The composition of EVE varies between different species. The endogenous retrovirus 3 (ERV3) is one of these elements that is present only in humans and other Catarrhini. Conservation of ERV3 in most of the investigated Catarrhini and the expression pattern in normal tissues suggest a putative physiological role of ERV3. On the other hand, ERV3 has been implicated in the pathogenesis of auto-immunity and cancer. In the present review we summarize knowledge about this interesting EVE. We propose the model that expression of ERV3 (and probably other EVE loci) under pathological conditions might be part of a metazoan SOS response.
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Affiliation(s)
| | - Christine Brütting
- Department of Paediatrics I, Martin Luther University Halle-Wittenberg, Halle, Germany.,Department of Neurology, Martin Luther University Halle-Wittenberg, Halle, Germany
| | - Caroline Schmidt
- Department of Paediatrics I, Martin Luther University Halle-Wittenberg, Halle, Germany
| | - Ines Volkmer
- Department of Paediatrics I, Martin Luther University Halle-Wittenberg, Halle, Germany
| | - Martin S Staege
- Department of Paediatrics I, Martin Luther University Halle-Wittenberg, Halle, Germany
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