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Díaz Álvarez A, Peric N, Franchina Vergel NA, Nys JP, Berthe M, Patriarche G, Harmand JC, Caroff P, Plissard S, Ebert P, Xu T, Grandidier B. Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls. Nanotechnology 2019; 30:324002. [PMID: 30995632 DOI: 10.1088/1361-6528/ab1a4e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron microscopy. We show that the changes of the surface morphology as a function of the NW composition and the nature of the seed particles are intimately related to the formation and reaction of surface point defects. Langmuir evaporation close to the congruent evaporation temperature causes the formation of vacancies which nucleate and form vacancy islands on {110} sidewalls of self-catalyzed InAs NWs. However, for annealing temperatures much smaller than the congruent temperature, a new phenomenon occurs: group III vacancies form and are filled by excess As atoms, leading to surface AsGa antisites. The resulting Ga adatoms nucleate with excess As atoms at the NW edges, producing monoatomic-step islands on the {110} sidewalls of GaAs NWs. Finally, when gold atoms diffuse from the seed particle onto the {110} sidewalls during evaporation of the protective As cap, Langmuir evaporation does not take place, leaving the sidewalls of InAsSb NWs atomically flat.
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Affiliation(s)
- Adrian Díaz Álvarez
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN, F-59000 Lille, France
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Alphazan T, Díaz Álvarez A, Martin F, Grampeix H, Enyedi V, Martinez E, Rochat N, Veillerot M, Dewitte M, Nys JP, Berthe M, Stiévenard D, Thieuleux C, Grandidier B. Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping. ACS Appl Mater Interfaces 2017; 9:20179-20187. [PMID: 28534397 DOI: 10.1021/acsami.7b02645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 1020 cm-3. Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.
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Affiliation(s)
- Thibault Alphazan
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
- C2P2, CPE Lyon , 43 Bd du 11 Nov. 1918, 69616 Villeurbanne cedex, France
| | - Adrian Díaz Álvarez
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - François Martin
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Helen Grampeix
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Virginie Enyedi
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Eugénie Martinez
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Névine Rochat
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Marc Veillerot
- Univ. Grenoble Alpes, CEA, LETI , MINATEC Campus, F-38000 Grenoble, France
| | - Marc Dewitte
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Jean-Philippe Nys
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Maxime Berthe
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Didier Stiévenard
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
| | - Chloé Thieuleux
- C2P2, CPE Lyon , 43 Bd du 11 Nov. 1918, 69616 Villeurbanne cedex, France
| | - Bruno Grandidier
- Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 - IEMN , F-59000 Lille, France
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Díaz Álvarez A, Xu T, Tütüncüoglu G, Demonchaux T, Nys JP, Berthe M, Matteini F, Potts HA, Troadec D, Patriarche G, Lampin JF, Coinon C, Fontcuberta i Morral A, Dunin-Borkowski RE, Ebert P, Grandidier B. Nonstoichiometric Low-Temperature Grown GaAs Nanowires. Nano Lett 2015; 15:6440-6445. [PMID: 26339987 DOI: 10.1021/acs.nanolett.5b01802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
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Affiliation(s)
- Adrian Díaz Álvarez
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - Tao Xu
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
- Sino-European School of Technology, Shanghai University , 99 Shangda Road, Shanghai, 200444, People's Republic of China
| | - Gözde Tütüncüoglu
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne , CH-1015 Lausanne, Switzerland
| | - Thomas Demonchaux
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - Jean-Philippe Nys
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - Maxime Berthe
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - Federico Matteini
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne , CH-1015 Lausanne, Switzerland
| | - Heidi A Potts
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne , CH-1015 Lausanne, Switzerland
| | - David Troadec
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - Gilles Patriarche
- CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France
| | - Jean-François Lampin
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - Christophe Coinon
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
| | - Anna Fontcuberta i Morral
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne , CH-1015 Lausanne, Switzerland
| | | | - Philipp Ebert
- Peter Grünberg Institut, Forschungszentrum Jülich GmbH , 52425 Jülich, Germany
| | - Bruno Grandidier
- Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
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