Electronic properties of single-crystalline Fe4O5

We synthesized single and polycrystals of iron oxide with an unconventional Fe₄O₅ stoichiometry under high-pressure high-temperature (HP-HT) conditions. The crystals of Fe₄O₅ had a CaFe₃O₅-type structure composed of linear chains of iron with octahedral and trigonal-prismatic oxygen coordinations. We investigated the electronic properties of this mixed-valence oxide using several experimental techniques, including measurements of electrical resistivity, the Hall effect, magnetoresistance, and thermoelectric power (Seebeck coefficient), X-ray absorption near edge spectroscopy (XANES), reflectance and absorption spectroscopy, and single-crystal X-ray diffraction. Under ambient conditions, the single crystals of Fe₄O₅ demonstrated a semimetal electrical conductivity with nearly equal partial contributions of electrons and holes (σ_n ≈ σ_p), in line with the nominal average oxidation state of iron as Fe^2.5+. This finding suggests that both the octahedral and trigonal-prismatic iron cations contribute to the electrical conductivity of Fe₄O₅via an Fe²⁺/Fe³⁺ polaron hopping mechanism. A moderate deterioration of crystal quality shifted the dominant electrical conductivity to n-type and considerably worsened the conductivity. Thus, alike magnetite, Fe₄O₅ with equal numbers of Fe²⁺ and Fe³⁺ ions can serve as a prospective model for other mixed-valence transition-metal oxides. In particular, it could help in the understanding of the electronic properties of other recently discovered mixed-valence iron oxides with unconventional stoichiometries, many of which are not recoverable to ambient conditions; it can also help in designing novel more complex mixed-valence iron oxides.

A Room-Temperature Verwey-type Transition in Iron Oxide, Fe5 O6

Functional oxides whose physicochemical properties may be reversibly changed at standard conditions are potential candidates for the use in next‐generation nanoelectronic devices. To date, vanadium dioxide (VO₂) is the only known simple transition‐metal oxide that demonstrates a near‐room‐temperature metal–insulator transition that may be used in such appliances. In this work, we synthesized and investigated the crystals of a novel mixed‐valent iron oxide with an unconventional Fe₅O₆ stoichiometry. Near 275 K, Fe₅O₆ undergoes a Verwey‐type charge‐ordering transition that is concurrent with a dimerization in the iron chains and a following formation of new Fe−Fe chemical bonds. This unique feature highlights Fe₅O₆ as a promising candidate for the use in innovative applications. We established that the minimal Fe−Fe distance in the octahedral chains is a key parameter that determines the type and temperature of charge ordering. This model provides new insights into charge‐ordering phenomena in transition‐metal oxides in general.

Charge-ordering transition in iron oxide Fe4O5 involving competing dimer and trimer formation

Phase transitions that occur in materials, driven, for instance, by changes in temperature or pressure, can dramatically change the materials' properties. Discovering new types of transitions and understanding their mechanisms is important not only from a fundamental perspective, but also for practical applications. Here we investigate a recently discovered Fe4O5 that adopts an orthorhombic CaFe3O5-type crystal structure that features linear chains of Fe ions. On cooling below ∼150 K, Fe4O5 undergoes an unusual charge-ordering transition that involves competing dimeric and trimeric ordering within the chains of Fe ions. This transition is concurrent with a significant increase in electrical resistivity. Magnetic-susceptibility measurements and neutron diffraction establish the formation of a collinear antiferromagnetic order above room temperature and a spin canting at 85 K that gives rise to spontaneous magnetization. We discuss possible mechanisms of this transition and compare it with the trimeronic charge ordering observed in magnetite below the Verwey transition temperature.

A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.

Superconducting properties of (Ba-K)Fe2As2 single crystals disordered with fast neutron irradiation

Resistivity ρ(T), Hall coefficient RH(T), superconducting transition temperature Tc and slopes of the upper critical field dHc2/dT were studied in (Ba1-xKx)Fe2As2 (x = 0.218, 0.356, 0.531) single crystals irradiated with fast neutrons. It is found that dTc/dρSC-the rate of decreasing Tc as a function of the ρSC (ρSC is the resistivity at T = Tc)-linearly increases with concentration x. Slow changes in the Hall coefficient RH, as well as the quadratic electronic contribution to the resistivity, show that there are no substantial changes in the topology of the Fermi surface caused by irradiation. The slopes of the upper critical field dHc2/dT in ab and c directions as a function of ρSC determined by Hall measurements show a reasonable agreement with a model that suggests constancy of the band parameters.

Structural stability of a golden semiconducting orthorhombic polymorph of Ti2O3 under high pressures and high temperatures

An orthorhombic polymorph of titanium oxide (Ti(2)O(3)) has been synthesized at high pressure-high temperature (HP-HT) conditions. It has been refined in the Pnma space group and the Th(2)S(3) structural type with the unit cell parameters as follows: a = 7.8248(6) Å, b = 2.8507(4) Å, c = 8.0967(3) Å, V = 180.61(1) Å(3) and Z = 4. The samples of Pnma-Ti(2)O(3) were of a golden colour, in contrast to the conventional black corundum-structured Ti(2)O(3). The structural stability of this polymorph has been examined by simultaneous Raman and x-ray diffraction studies under high pressure over 70 GPa and high temperature over 2200 K. No phase transformations or chemical reactions have been established. The electrical resistivity of Th(2)S(3)-structured Ti(2)O(3) samples showed a semiconducting behaviour and, at ambient conditions, was equal to 0.20-0.46 Ω cm. Conventional near-infrared absorption spectroscopy established the absence of energy gaps above 0.25 eV.