Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top-down approaches to their fabrication, such as exfoliation of bulk crystals by "scotch-tape," are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom-up technique based on epitaxy is used to demonstrate high-quality, wafer-scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well-defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV-C spectral range, offering a scalable route to deep-UV optoelectronics.

Subnanometer-Wide Indium Selenide Nanoribbons

Indium selenides (In_xSe_y) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In this work we synthesize single-layer, ultrathin, subnanometer-wide In_xSe_y by templated growth inside single-walled carbon nanotubes (SWCNTs). Despite the complex polymorphism of In_xSe_y we show that the phase of the encapsulated material can be identified through comparison of experimental aberration-corrected transmission electron microscopy (AC-TEM) images and AC-TEM simulations of known structures of In_xSe_y. We show that, by altering synthesis conditions, one of two different stoichiometries of sub-nm In_xSe_y, namely InSe or β-In₂Se₃, can be prepared. Additionally, in situ AC-TEM heating experiments reveal that encapsulated β-In₂Se₃ undergoes a phase change to γ-In₂Se₃ above 400 °C. Further analysis of the encapsulated species is performed using X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA), energy dispersive X-ray analysis (EDX), and Raman spectroscopy, corroborating the identities of the encapsulated species. These materials could provide a platform for ultrathin, subnanometer-wide phase-change nanoribbons with applications as nanoelectronic components.

Graphene FETs with high and low mobilities have universal temperature-dependent properties

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,V_g, for a series of monolayer graphene field effect transistors with mobilities,μ, ranging between 5000 and 250 000 cm²V^-1s^-1at low-temperature. Our measurements over a wide range of temperatures from 4 to 400 K can be fitted by the universal relationμ=4/eδnmaxfor all devices, whereρmaxis the resistivity maximum at the neutrality point andδnis an 'uncertainty' in the bipolar carrier density, given by the full width at half maximum of the resistivity peak expressed in terms of carrier density,n. This relation is consistent with thermal broadening of the carrier distribution and the presence of the disordered potential landscape consisting of so-called electron-hole puddles near the Dirac point. To demonstrate its utility, we combine this relation with temperature-dependent linearised Boltzmann transport calculations that include the effect of optical phonon scattering. This approach demonstrates the similarity in the temperature-dependent behaviour of carriers in different types of single layer graphene transistors with widely differing carrier mobilities. It can also account for the relative stability, over a wide temperature range, of the measured carrier mobility of each device.

Coherent Phononics of van der Waals Layers on Nanogratings

Strain engineering can be used to control the physical properties of two-dimensional van der Waals (2D-vdW) crystals. Coherent phonons, which carry dynamical strain, could push strain engineering to control classical and quantum phenomena in the unexplored picosecond temporal and nanometer spatial regimes. This intriguing approach requires the use of coherent GHz and sub-THz 2D phonons. Here, we report on nanostructures that combine nanometer thick vdW layers and nanogratings. Using an ultrafast pump-probe technique, we generate and detect in-plane coherent phonons with frequency up to 40 GHz and hybrid flexural phonons with frequency up to 10 GHz. The latter arises from the periodic modulation of the elastic coupling of the vdW layer at the grooves and ridges of the nanograting. This creates a new type of a tailorable 2D periodic phononic nanoobject, a flexural phononic crystal, offering exciting prospects for the ultrafast manipulation of states in 2D materials in emerging quantum technologies.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2 /SnS Heterostructures

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertaining to their properties and interactions. One such gap is the interaction between these materials and hydrogen, a potentially vital future energy vector and ubiquitous processing gas in the semiconductor industry. This work reports on the interaction of hydrogen with the vdW semiconductor SnS₂ , where molecular hydrogen (H₂ ) and H-ions induce a controlled chemical conversion into semiconducting-SnS or to β-Sn. This hydrogen-driven reaction is facilitated by the different oxidation states of Sn and is successfully applied to form SnS₂ /SnS heterostructures with uniform layers, atomically flat interfaces and well-aligned crystallographic axes. This approach is scalable and offers a route for engineering materials at the nanoscale for semiconductor technologies based on the earth-abundant elements Sn and S, a promising result for a wide range of potential applications.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe₃ GeTe₂ as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole-free tunnel barrier at the Fe₃ GeTe₂ /InSe interface and pinholes in the InSe spacer layer, respectively. For the tunneling device, a large magnetoresistance (MR) of 41% is obtained under an applied bias current of 0.1 µA at 10 K, which is about three times larger than that of the metallic device. Moreover, the tunneling device exhibits a lower operating bias current but a more sensitive bias current dependence than the metallic device. The MR and spin polarization of both the metallic and tunneling devices decrease with increasing temperature, which can be fitted well by Bloch's law. These findings reveal the critical role of pinholes in the MR of all-2D van der Waals ferromagnet/semiconductor heterojunction devices.

New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties

The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3d are identified, distinct from well-known polymorphs based on the D 3h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical conversion of van der Waals layers. As an example, we used 2D indium selenide (InSe) obtained by exfoliation and converted it by direct fluorination into indium fluoride (InF₃), which has a nonlayered, rhombohedral structure and therefore cannot  possibly be obtained by exfoliation. The conversion of InSe into InF₃ is found to be feasible for thicknesses down to three layers of InSe, and the obtained stable InF₃ layers are doped with selenium. We study this new 2D material by optical, electron transport, and Raman measurements and show that it is a semiconductor with a direct bandgap of 2.2 eV, exhibiting high optical transparency across the visible and infrared spectral ranges. We also demonstrate the scalability of our approach by chemical conversion of large-area, thin InSe laminates obtained by liquid exfoliation, into InF₃ films. The concept of chemical conversion of cleavable thin van der Waals crystals into covalently bonded noncleavable ones opens exciting prospects for synthesizing a wide variety of novel atomically thin covalent crystals.

Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI3 perovskite nanocrystals and InGaN

Despite important advances in the synthesis of inorganic perovskite nanocrystals (NCs), the long-term instability and degradation of their quantum yield (QY) over time need to be addressed to enable the further development and exploitation of these nanomaterials. Here we report stable CsPbI3 perovskite NCs and their use in hybrid light emitting diodes (LEDs), which combine in one system the NCs and a blue GaN-based LED. Nanocrystals with improved morphological and optical properties are obtained by optimizing the post-synthesis replacement of oleic acid ligands with iminodibenzoic acid: the NCs have a long shelf-life (>2 months), stability under different environmental conditions, and a high QY, of up to 90%, in the visible spectral range. Ligand replacement enables the engineering of the morphological and optical properties of the NCs. Furthermore, the NCs can be used to coat the surface of a GaN-LED to realize a stable diode where they are excited by blue light from the LED under low current injection conditions, resulting in emissions at distinct wavelengths in the visible range. The high QY and fluorescence lifetime in the nanosecond range are key parameters for visible light communication, an emerging technology that requires high-performance visible light sources for secure, fast energy-efficient wireless transmission.

Formation and Healing of Defects in Atomically Thin GaSe and InSe

Two dimensional III-VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point and extended atomic defects formed in mono-, bi-, and few-layer GaSe and InSe crystals is presented. Using state-of-the-art scanning transmission electron microscopy, it is observed that these materials can form both metal and selenium vacancies under the action of the electron beam. Selenium vacancies are observed to be healable: recovering the perfect lattice structure in the presence of selenium or enabling incorporation of dopant atoms in the presence of impurities. Under prolonged imaging, multiple point defects are observed to coalesce to form extended defect structures, with GaSe generally developing trigonal defects and InSe primarily forming line defects. These insights into atomic behavior could be harnessed to synthesize and tune the properties of 2D post-transition-metal monochalcogenide materials for optoelectronic applications.

Room Temperature Uniaxial Magnetic Anisotropy Induced By Fe-Islands in the InSe Semiconductor Van Der Waals Crystal

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore's law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Stable DHLA–PEG capped PbS quantum dots: from synthesis to near-infrared biomedical imaging

Stability, biocompatibility and near-infrared photoluminescence of PbS nanocrystals capped with PEG-based ligands open up realistic prospects for non-invasive bioimaging applications.

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe.

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast (∼2 μs), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies.

High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetectors based on well-ordered laterally mesoporous GaN. The specific detectivity of our devices under UV-illumination reaches values of up to 5.3 × 10¹⁴ Jones. We attribute this high specific detectivity to the properties of the mesoporous GaN/metal contact interface: the trapping of photo-generated holes at the interface lowers the Schottky barrier height thus causing a large internal gain. High detectivity along with a simple fabrication process endows these laterally mesoporous GaN photodetectors with great potential for applications that require selective detection of weak optical signals in the UV range.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 10³ cm² V^-1 s^-1 and 10⁴ cm² V^-1 s^-1 at room and liquid-helium temperatures, respectively, allowing the observation of the fully developed quantum Hall effect. The conduction electrons occupy a single 2D subband and have a small effective mass. Photoluminescence spectroscopy reveals that the bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band-edge optical response vanishes in monolayer InSe, which is attributed to the monolayer's mirror-plane symmetry. Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.

Surface Sensing of Quantum Dots by Electron Spins

The nanoscale design of quantum dots (QDs) requires advanced analytical techniques. However, those that are commonly used do not have sufficient sensitivity or spatial resolution. Here, we use magnetic resonance techniques combined with paramagnetic Mn impurities in PbS QDs for sensitive probing of the QD surface and environment. In particular, we reveal inequivalent proton spin relaxations of the capping ligands and solvent molecules, strengths and anisotropies of the Mn nuclear spin interactions, and Mn nuclei distances with ∼1 Å sensitivity. These findings demonstrate the potential of magnetically doped QDs as sensitive magnetic nanoprobes and the use of electron spins for surface sensing.

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as "stepping stones" for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire

Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate. We use a picosecond acoustic technique to probe the phonon resonances in the InSe vdW layered crystal. Analysis of the nanomechanics indicates that the InSe is mechanically decoupled from the substrate and thus presents an elastically imperfect interface. A high degree of phonon isolation at the interface points toward applications in thermoelectric devices, or the inclusion of an acoustic transition layer in device design. These findings demonstrate basic properties of layered structures and so illustrate the usefulness of nanomechanical probing in nanolayer/nanolayer or nanolayer/substrate interface tuning in vdW heterostructures.

Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

Developing Mn-doped lead sulfide quantum dots for MRI labels

Magnetic interactions of Mn²⁺ ions in lead sulfide (PbS) nanocrystals with protons in water are probed by NMR and MRI.

High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures

High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum.

Tuneable paramagnetic susceptibility and exciton g-factor in Mn-doped PbS colloidal nanocrystals

We report on PbS colloidal nanocrystals that combine within one structure solubility in physiological solvents with near-infrared photoluminescence, and magnetic and optical properties tuneable by the controlled incorporation of magnetic impurities (Mn). We use high magnetic fields (B up to 30 T) to measure the magnetization of the nanocrystals in liquid and the strength of the sp-d exchange interaction between the exciton and the Mn-ions. With increasing Mn-content from 0.1% to 7%, the mass magnetic susceptibility increases at a rate of ∼ 10(-7) m(3) kg(-1) per Mn percentage; correspondingly, the exciton g-factor decreases from 0.47 to 0.10. The controlled modification of the paramagnetism, fluorescence and exciton g-factor of the nanocrystals is relevant to the implementation of these paramagnetic semiconductor nanocrystals in quantum technologies ranging from quantum information to magnetic resonance imaging.

Subterahertz chaos generation by coupling a superlattice to a linear resonator

We investigate the effects of a linear resonator on the high-frequency dynamics of electrons in devices exhibiting negative differential conductance. We show that the resonator strongly affects both the dc and ac transport characteristics of the device, inducing quasiperiodic and high-frequency chaotic current oscillations. The theoretical findings are confirmed by experimental measurements of a GaAs/AlAs miniband semiconductor superlattice coupled to a linear microstrip resonator. Our results are applicable to other active solid state devices and provide a generic approach for developing modern chaos-based high-frequency technologies including broadband chaotic wireless communication and superfast random-number generation.

Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement

Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.

Controlling high-frequency collective electron dynamics via single-particle complexity

We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstrate that external fields can tune the collective behavior of quantum particles by imprinting configurable patterns in the single-particle classical phase space.

High magnetic field quantum transport in Au nanoparticle-cellulose films

We report the magneto-transport properties of cellulose films comprising interconnected networks of gold nanoparticles (Au NPs). Cellulose is a biopolymer that can be made electrically conducting by cellulose regeneration in Au NP dispersions. The mechanism of electronic conduction in the Au-cellulose films changes from variable range hopping to metallic-like conduction with decreasing resistivity. Our experiments in high magnetic fields (up to 45 T) reveal negative magnetoresistance in the highly resistive films. This is attributed to the spin polarization of the Au NPs and the magnetic field induced suppression of electron spin flips during spin-polarized tunneling in the NP network.

Optical imaging of electrical carrier injection into individual InAs quantum dots

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of carrier injection into a single QD. Tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to a spectrum of sharp EL lines from a small number of bright spots on the diode surface, characteristic of emission from individual QDs. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential tunneling paths for carriers.

Manipulating and imaging the shape of an electronic wave function by magnetotunneling spectroscopy

We measure the current due to electrons tunneling through the ground state of hydrogenic Si donors placed in a GaAs quantum well in the presence of a magnetic field tilted at an angle to the plane of the well. The component of B parallel to the direction of current compresses the donor wave function. By measuring the current as a function of the perpendicular component of B, we probe how the magnetocompression affects the spatial form of the wave function and observe directly the transition from Coulombic to magnetic confinement at high fields.

Tailoring the physical properties of thiol-capped PbS quantum dots by thermal annealing

We show that the thermal annealing of thiol-capped PbS colloidal quantum dots provides a means of narrowing the nanoparticle size distribution, increasing the size of the quantum dots and facilitating their coalescence preferentially along the 100 crystallographic axes. We exploit these phenomena to tune the photoluminescence emission of an ensemble of dots and to narrow the optical linewidth to values that compare with those reported at room temperature for single PbS quantum dots. We probe the influence of annealing on the electronic properties of the quantum dots by temperature dependent studies of the photoluminescence and magneto-photoluminescence.

Tailoring the electrical conductivity of GaAs by nitrogen incorporation

We investigate the electrical conductivity of the dilute nitride alloy GaAs(1-x)N(x), focusing on the range of concentrations of N over which this material system behaves as a good conductor. We report a large increase of the resistivity for x>0.2% and a strong reduction of the electron mobility, μ, at x∼0.1%. In the ultra-dilute regime (x∼0.1%) and at low electric fields (<1 kV cm(-1)), the electrical conductivity retains the characteristic features of electron transport through extended states, albeit with relatively low mobility (μ∼0.1 m(2) V(-1) s(-1) at T = 293 K) due to scattering of electrons by N atoms. In contrast, at large electric fields (>1 kV cm(-1)), the conduction electrons gain sufficient energy to approach the energy of the resonant N level, where they become spatially localized. This resonant electron localization in an electric field (RELIEF) leads to negative differential velocity. The RELIEF effect could be observed in other III-N-V compounds, such as InAs(1-x)N(x) and InP(1-x)N(x), and has potential for applications in terahertz electronics.

Fock-Darwin-like quantum dot states formed by charged Mn interstitial ions

We report a method of creating electrostatically induced quantum dots by thermal diffusion of interstitial Mn ions out of a p-type (GaMn)As layer into the vicinity of a GaAs quantum well. This approach creates deep, approximately circular, and strongly confined dotlike potential minima in a large (200 microm) mesa diode structure without need for advanced lithography or electrostatic gating. Magnetotunneling spectroscopy of an individual dot reveals the symmetry of its electronic eigenfunctions and a rich energy level spectrum of Fock-Darwin-like states with an orbital angular momentum component |lz| from 0 to 11.

Bifurcations and chaos in semiconductor superlattices with a tilted magnetic field

We study the effects of dissipation on electron transport in a semiconductor superlattice with an applied bias voltage and a magnetic field that is tilted relative to the superlattice axis. In previous work, we showed that, although the applied fields are stationary, they act like a terahertz plane wave, which strongly couples the Bloch and cyclotron motion of electrons within the lowest miniband. As a consequence, the electrons exhibit a unique type of Hamiltonian chaos, which creates an intricate mesh of conduction channels (a stochastic web) in phase space, leading to a large resonant increase in the current flow at critical values of the applied voltage. This phase-space patterning provides a sensitive mechanism for controlling electrical resistance. In this paper, we investigate the effects of dissipation on the electron dynamics by modifying the semiclassical equations of motion to include a linear damping term. We demonstrate that, even in the presence of dissipation, deterministic chaos plays an important role in the electron transport process. We identify mechanisms for the onset of chaos and explore the associated sequence of bifurcations in the electron trajectories. When the Bloch and cyclotron frequencies are commensurate, complex multistability phenomena occur in the system. In particular, for fixed values of the control parameters several distinct stable regimes can coexist, each corresponding to different initial conditions. We show that this multistability has clear, experimentally observable, signatures in the electron transport characteristics.

Novel regimes of electron dynamics in superlattices

A superlattice (SL) is an artificial crystal in which alternating nanometre-thick layers of two or more different semiconductor materials provide a periodic potential for conduction electrons. Strong magnetic and electric fields applied to this type of structure provide a means of exploring novel regimes of electron dynamics. The applied fields lower the dimensionality of the electronic states and lead to qualitative changes in the electronic conduction. This discovery is of fundamental interest and highly relevant to the properties of other low-dimensional conductors, such as nanowires and quantum dot SLs, which are presently attracting the attention of the physics and device communities. In addition, a rare type of chaotic electron dynamics, called non-Kolmogorov-Arnold-Moser (KAM) chaotic motion, which has been theoretically studied for several decades, is observed experimentally in SLs. The onset of chaos at discrete values of the applied electric and magnetic fields is observed as a large increase in the current flow due to the creation of unbound electron orbits, which propagate through intricate web patterns in phase space. Therefore, non-KAM chaos could provide a new mechanism for controlling the electrical conductivity of the electronic devices with extreme sensitivity.

Strong effect of resonant impurities on Landau-level quantization

We investigate experimentally the effect of a random distribution of nitrogen (N) impurities on the Landau-level spectrum of a GaAs quantum well. Our magnetotunneling study reveals complex and nonequally spaced Landau levels and a quenching of the Landau states at a well-defined bias and electron energy which is resonant with that of the N atoms. Analysis of the magnetic field dependence of the tunnel current into the Landau levels of the well also provides quantitative information about the nonresonant component of the N-related scattering potential.

Magnetic-field-induced suppression of electronic conduction in a superlattice

We use a magnetic field applied along the axis of a semiconductor superlattice (SL) as a controllable means of creating a one-dimensional band structure. We demonstrate that the current flow through the SL is strongly suppressed when the electron motion perpendicular to the SL axis is strongly confined by the quantizing magnetic field. By modeling this behavior using semiclassical and nonequilibrium Green's function methods, we show that the observed quenching arises from a qualitative change in electron dynamics caused by increasing quantum confinement.

Chaotic electron diffusion through stochastic webs enhances current flow in superlattices

Understanding how complex systems respond to change is of fundamental importance in the natural sciences. There is particular interest in systems whose classical newtonian motion becomes chaotic as an applied perturbation grows. The transition to chaos usually occurs by the gradual destruction of stable orbits in parameter space, in accordance with the Kolmogorov-Arnold-Moser (KAM) theorem--a cornerstone of nonlinear dynamics that explains, for example, gaps in the asteroid belt. By contrast, 'non-KAM' chaos switches on and off abruptly at critical values of the perturbation frequency. This type of dynamics has wide-ranging implications in the theory of plasma physics, tokamak fusion, turbulence, ion traps, and quasicrystals. Here we realize non-KAM chaos experimentally by exploiting the quantum properties of electrons in the periodic potential of a semiconductor superlattice with an applied voltage and magnetic field. The onset of chaos at discrete voltages is observed as a large increase in the current flow due to the creation of unbound electron orbits, which propagate through intricate web patterns in phase space. Non-KAM chaos therefore provides a mechanism for controlling the electrical conductivity of a condensed matter device: its extreme sensitivity could find applications in quantum electronics and photonics.

Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells

We use magnetotunneling spectroscopy to explore the admixing of the extended GaAs conduction band states with the localized N-impurity states in dilute GaAs(1-y)N(y) quantum wells. In our resonant tunneling diodes, electrons can tunnel into the N-induced E- and E+ subbands in a GaAs(1-y)N(y) quantum well layer, leading to resonant peaks in the current-voltage characteristics. By varying the magnetic field applied perpendicular to the current direction, we can tune an electron to tunnel into a given k state of the well; since the applied voltage tunes the energy, we can map out the form of the energy-momentum dispersion curves of E- and E+. The data reveal that for a small N content (approximately 0.1%) the E- and E+ subbands are highly nonparabolic and that the heavy effective mass E+ states have a significant Gamma-conduction band character even at k=0.

Imaging the electron wave function in self-assembled quantum dots

Magnetotunneling spectroscopy is used as a noninvasive and nondestructive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The technique exploits the effect of the classical Lorentz force on the motion of a tunneling electron and can be regarded as the momentum (k) space analog of scanning tunneling microscopy imaging. The images reveal the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states.

Changes in respiratory drive account for the magnitude of dyspnoea during bronchoconstriction in asthmatics

To evaluate whether the interindividual differences in dyspnoea perceived by asthmatic subjects for the same level of airway narrowing could depend on different changes in respiratory drive, we assessed the relationship between changes in airway calibre, changes in neuromuscular output, and dyspnoea rate during progressive bronchoconstriction induced by methacholine. We studied 18 asymptomatic asthmatic subjects (aged 18-36 yrs; 11 males and 7 females) with normal lung function. Dyspnoea (Borg scale), mouth occlusion pressure (P0.1), and forced expiratory volume in one second (FEV1) were measured at baseline and after inhalation of aerosols of doubling concentrations of methacholine (MCh). The progressive bronchoconstriction induced by MCh was associated with a progressive increase both of P0.1 and dyspnoea. Dyspnoea score was linearly related either to the fall in FEV1, or to the increase in P0.1. However, the slope values of the relationship between dyspnoea score and the corresponding percent fall in FEV1 showed a large interindividual variability (0.05-0.32; coefficient of variability (CoV) 43%). By contrast, the slope values of the relationship between dyspnoea score and the corresponding percent increase in P0.1 ranged 0.02-0.05 (CoV = 14%), indicating a more homogeneous response to dyspnoea for the same change in P0.1. At the highest MCh concentration, the dyspnoea score was linearly related to the corresponding change in P0.1 (r = 0.91; p < 0.01), but not to the corresponding percentage fall in FEV1 (r = 0.28). These results show that the interindividual differences in dyspnoea perceived by asthmatic subjects for the same level of airway narrowing are associated with different changes in respiratory drive during bronchoconstriction.