Enhanced age-hardening response and creep resistance of an Al-0.5Mn-0.3Si (at.%) alloy by Sn inoculation

Precipitation-strengthening at ambient and high temperatures is examined in Al-0.5Mn-0.3Si (at.%) alloys with and without 0.02 at.% Sn micro-additions. Isochronal aging experiments reveal that Sn inoculation results in a pronounced age-hardening response: a hardening increment of 125 MPa is achieved at peak-aging (475 °C), which is five times greater than that of a Sn-free alloy. Scanning electron microscopy and synchrotron x-ray diffraction analyses demonstrate that, while the structure of the α-Al(Mn,Fe)Si precipitates formed in the peak-aged alloys is identical, their mean radius is smaller (R ~ 25 vs. 100-500 nm) and their number density is greater (~1021 vs. ~1019-20 m -3) in the Sn-modified alloy. Atom-probe tomography analyses reveal that the enhanced dispersion of the α-precipitates is related primarily to the formation of Sn-rich nanoprecipitates at intermediate temperatures, which act as nucleation sites for Mn-Si-rich nanoprecipitates. High-resolution transmission electron microscopy analyses demonstrate that these Mn-Si-rich nanoprecipitates exhibit icosahedral quasicrystal ordering (I-phase), which transform into the cubic-approximant α-phase upon peak aging. Significant Sn segregation at the semi-coherent interfaces of the α-precipitates in the peak-aged Sn-modified alloy is observed via APT, which promotes homogeneous nucleation of the I/α-precipitates at aging temperatures > 400 °C. At 300 °C, creep threshold stresses are observed in both alloys in the peak-aged state, which increases from ~30 MPa in the Sn-free alloy to ~52 MPa in the Sn-modified alloy. This boost in creep resistance is consistent with the enhanced aging response (higher Orowan stress).

Solute-induced strengthening during creep of an aged-hardened Al-Mn-Zr alloy

We examine the precipitation and creep behavior of Al-0.5Mn-0.02Si (at.%) alloys, with and without the L1₂-forming elements Zr and Er (0.09 and 0.05 at.%, respectively), utilizing isochronal aging experiments as well as compressive and tensile creep tests performed between 275 and 400 °C. The Al-0.5Mn-0.09Zr-0.05Er-0.05Si alloy exhibits an unusually high creep resistance in the peak-aged state, which is significantly better than that observed generally in its Mn-free L1₂-strengthened counterparts; for example, the creep threshold stresses at 300 °C are 34-37 MPa, about three times higher than those in a Mn-free Al-0.11Zr-0.005Er-0.02Si alloy. Scanning transmission electron microscopy illustrates that nanoscale Al ₃ (Zr,Er) L1 ₂ -precipitates are formed in the dendritic cores and micron-sized Al(Mn,Fe)Si α-precipitates in the inter-dendritic channels. Moreover, the Al(f.c.c.)-matrix remains supersaturated with randomly distributed Mn solute atoms, as determined by atom-probe tomography and electrical conductivity measurements, for months at creep temperatures. Creep experiments on the Zr- and Er-free Al-0.5Mn-0.02Si solid-solution alloy reveal a small primary creep strain, a high apparent stress exponent, n_a ~9-7, and a threshold-stress-type behavior. After ruling out other possible mechanisms, we provide evidence that the threshold stress in this precipitate-free alloy originates from dislocation/solute elastic interactions leading to a strong drag force exerted on edge dislocations, hindering their ability to climb. The relatively high creep resistance of Al-0.5Mn-0.09Zr-0.05Er-0.05Si is interpreted in terms of the synergy between this solute-induced threshold stress (SITS, from Mn in solid-solution) and the known precipitate-bypass threshold stress (from the L1₂-nanoprecipitates).

Laser writing of nitrogen-doped silicon carbide for biological modulation

Conducting or semiconducting materials embedded in insulating polymeric substrates can be useful in biointerface applications; however, attainment of this composite configuration by direct chemical processes is challenging. Laser-assisted synthesis has evolved as a fast and inexpensive technique to prepare various materials, but its utility in the construction of biophysical tools or biomedical devices is less explored. Here, we use laser writing to convert portions of polydimethylsiloxane (PDMS) into nitrogen-doped cubic silicon carbide (3C-SiC). The dense 3C-SiC surface layer is connected to the PDMS matrix via a spongy graphite layer, facilitating electrochemical and photoelectrochemical activity. We demonstrate the fabrication of arbitrary two-dimensional (2D) SiC-based patterns in PDMS and freestanding 3D constructs. To establish the functionality of the laser-produced composite, we apply it as flexible electrodes for pacing isolated hearts and as photoelectrodes for local peroxide delivery to smooth muscle sheets.

Phase Segmentation in Atom-Probe Tomography Using Deep Learning-Based Edge Detection

Atom-probe tomography (APT) facilitates nano- and atomic-scale characterization and analysis of microstructural features. Specifically, APT is well suited to study the interfacial properties of granular or heterophase systems. Traditionally, the identification of the interface between, for precipitate and matrix phases, in APT data has been obtained either by extracting iso-concentration surfaces based on a user-supplied concentration value or by manually perturbing the concentration value until the iso-concentration surface qualitatively matches the interface. These approaches are subjective, not scalable, and may lead to inconsistencies due to local composition inhomogeneities. We introduce a digital image segmentation approach based on deep neural networks that transfer learned knowledge from natural images to automatically segment the data obtained from APT into different phases. This approach not only provides an efficient way to segment the data and extract interfacial properties but does so without the need for expensive interface labeling for training the segmentation model. We consider here a system with a precipitate phase in a matrix and with three different interface modalities-layered, isolated, and interconnected-that are obtained for different relative geometries of the precipitate phase. We demonstrate the accuracy of our segmentation approach through qualitative visualization of the interfaces, as well as through quantitative comparisons with proximity histograms obtained by using more traditional approaches.

Broad-band high-gain room temperature photodetectors using semiconductor-metal nanofloret hybrids with wide plasmonic response

Semiconducting nanowires are widely studied as building blocks for electro-optical devices; however, their limited cross-section and hence photo-response hinder the utilization of their full potential. Herein, we present an opto-electronic device for broad spectral detection ranging from the visible (VIS) to the short wavelength infra-red (SWIR) regime, using SiGe nanowires coupled to a broadband plasmonic antenna. The plasmonic amplification is obtained by deposition of a metallic nanotip at the edge of a nanowire utilizing a bottom-up synthesis technique. The metallic nanotip is positioned such that both optical plasmonic modes and electrical detection paths are coupled, resulting in a specific detectivity improvement of ∼1000 compared to conventional SiGe NWs. Detectivity and high gain are also measured in the SWIR regime owing to the special plasmonic response. Furthermore, the temporal response is improved by ∼1000. The fabrication process is simple and scalable, and it relies on low-resolution and facile fabrication steps with minimal requirements for top-down techniques.

Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation

Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy bandgap, and drive growth of self-assembled nanostructures. Understanding strain-energy relaxation mechanisms including phase transformations, dislocation nucleation and migration, and fracturing is essential to both exploit this degree of freedom and avoid degradation of carrier lifetime and mobility, particularly in prestrained electronic devices and flexible electronics that undergo large changes in strain during operation. Raman spectroscopy, high-resolution transmission electron microscopy, and electron diffraction are utilized to identify strain-energy release mechanisms of bent diamond-cubic silicon (Si) and zinc-blende GaAs nanowires, which were elastically strained to >6% at room temperature and then annealed at an elevated temperature to activate relaxation mechanisms. High-temperature annealing of bent Si-nanowires leads to the nucleation, glide, and climb of dislocations, which align themselves to form grain boundaries, thereby reducing the strain energy. Herein, Si nanowires are reported to undergo polygonization, which is the formation of polygonal-shaped grains separated by grain boundaries consisting of aligned edge dislocations. Furthermore, strain is shown to drive dopant diffusion. In contrast to the behavior of Si, GaAs nanowires release strain energy by forming nanocracks in regions of tensile strain due to the weakening of As-bonds. These insights into the relaxation behavior of highly strained crystals can inform the design of nanoelectronic devices and provide guidance on mitigating degradation.

Atomically resolved calcium phosphate coating on a gold substrate

Some articles have revealed that the electrodeposition of calcium phosphate (CaP) coatings entails a precursor phase, similarly to biomineralization in vivo. The chemical composition of the initial layer and its thickness are, however, still arguable, to the best of our knowledge. Moreover, while CaP and electrodeposition of metal coatings have been studied utilizing atom-probe tomography (APT), the electrodeposition of CaP ceramics has not been heretofore studied. Herein, we present an investigation of the CaP deposition on a gold substrate. Using APT and transmission electron microscopy (TEM) it is found that a mixture of phases, which could serve as transient precursor phases to hydroxyapatite (HAp), can be detected. The thickness of these phases is tens of nanometers, and they consist of amorphous CaP (ACP), dibasic calcium phosphate dihydrate (DCPD), and octacalcium phosphate (OCP). This demonstrates the value of using atomic-resolved characterization techniques for identifying the precursor phases. It also indicates that the kinetics of their transformation into the more stable HAp is not too fast to enable their observation. The coating gradually displays higher Ca/P atomic ratios, a porous nature, and concomitantly a change in its density.

1-D Metal Nanobead Arrays within Encapsulated Nanowires via a Red-Ox-Induced Dewetting: Mechanism Study by Atom-Probe Tomography

Metal nanoparticle arrays are excellent candidates for a variety of applications due to the versatility of their morphology and structure at the nanoscale. Bottom-up self-assembly of metal nanoparticles provides an important complementary alternative to the traditional top-down lithography method and makes it possible to assemble structures with higher-order complexity, for example, nanospheres, nanocubes, and core-shell nanostructures. Here we present a mechanism study of the self-assembly process of 1-D noble metal nanoparticles arrays, composed of Au, Ag, and AuAg alloy nanoparticles. These are prepared within an encapsulated germanium nanowire, obtained by the oxidation of a metal-germanium nanowire hybrid structure. The resulting structure is a 1-D array of equidistant metal nanoparticles with the same diameter, the so-called nanobead (NB) array structure. Atom-probe tomography and transmission electron microscopy were utilized to investigate the details of the morphological and chemical evolution during the oxidation of the encapsulated metal-germanium nanowire hybrid-structures. The self-assembly of nanoparticles relies on the formation of a metal-germanium liquid alloy and the migration of the liquid alloy into the nanowire, followed by dewetting of the liquid during shape-confined oxidation where the liquid column breaks-up into nanoparticles due to the Plateau-Rayleigh instability. Our results demonstrate that the encapsulating oxide layer serves as a structural scaffold, retaining the overall shape during the eutectic liquid formation and demonstrates the relationship between the oxide mechanical properties and the final structural characteristics of the 1-D arrays. The mechanistic details revealed here provide a versatile tool-box for the bottom-up fabrication of 1-D arrays nanopatterning that can be modified for multiple applications according to the RedOx properties of the material system components.

Alloy-assisted deposition of three-dimensional arrays of atomic gold catalyst for crystal growth studies

Large-scale assembly of individual atoms over smooth surfaces is difficult to achieve. A configuration of an atom reservoir, in which individual atoms can be readily extracted, may successfully address this challenge. In this work, we demonstrate that a liquid gold–silicon alloy established in classical vapor–liquid–solid growth can deposit ordered and three-dimensional rings of isolated gold atoms over silicon nanowire sidewalls. We perform ab initio molecular dynamics simulation and unveil a surprising single atomic gold-catalyzed chemical etching of silicon. Experimental verification of this catalytic process in silicon nanowires yields dopant-dependent, massive and ordered 3D grooves with spacing down to ~5 nm. Finally, we use these grooves as self-labeled and ex situ markers to resolve several complex silicon growths, including the formation of nodes, kinks, scale-like interfaces, and curved backbones.

Parallel patterning of atoms over a large surface would represent a major advance over current serial methods of single atom manipulation. Here, the authors explore a periodic instability from liquid alloy droplets for high-throughput atom printing.

Criteria and considerations for preparing atom-probe tomography specimens of nanomaterials utilizing an encapsulation methodology

Atom-probe tomography (APT) is a powerful method for characterization of nanomaterials due to its atomic-ppm level detection limit and Angstrom spatial resolution. Sample preparation for nanomaterials is, however, challenging because of their small dimensions and complicated geometries. Nanowires, with their high geometrical aspect ratio and nanowire length, 10 to 100 times their typical diameters, are highly suitable specimens for APT analyses, which can be transferred to silicon microposts using a nanomanipulator for direct APT measurements. This method is, however, prone to poor alignment and a limited field-of-view (FOV). Most importantly, direct implementation of APT with high aspect ratio nanowires may yield a low success rate of ∼30%, due to the high electric fields (10-40 V nm^-1) associated with APT. While this is acceptable for samples analyzed solely by APT, a low sample yield makes it challenging to perform correlative experiments on the same nanowire specimen, utilizing other sophisticated characterization instruments. Herein, we introduce a general strategy for preparing high-yield APT specimens by encapsulating the nanowires utilizing a conformal atomic-layer deposition (ALD) coating followed by site-specific lift-out using a dual-beam focused-ion beam microscope. The ALD deposited coating forms strong chemical bonds with the Si nanowires yielding a high-quality and robust interface. The evaporation electric fields of the ALD coating and the nanowires are tuned by changing laser energy to obtain a uniform evaporation rate. The strong adhesion of the ALD-coating/nanowire interface and uniform evaporation rate produce a >90% specimen yield, with small concentration of reconstruction artifacts in 3-D. Simultaneously, the field-of-view is enhanced and the surface of the nanowire becomes visible, which makes the study of surface adsorption, segregation and oxidation possible. We utilized ALD-ZnO coated silicon nanowires as an example for investigating the criteria for choosing coating materials, laser pulse energy, laser direction, sample geometry, and substrate materials. The same criteria and considerations are applicable for preparing specimens of nanoparticles and 2-D material.

Nanowire Kinking Modulates Doping Profiles by Reshaping the Liquid-Solid Growth Interface

Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent ⟨112⟩ directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.

Analysis of Nanoprecipitates in a Na-Doped PbTe-SrTe Thermoelectric Material with a High Figure of Merit

The dimensionless figure of merit, ZT, of bulk thermoelectric materials depends mainly on the transport properties of charge carriers and heat-carrying phonons. PbTe-4 mol % SrTe doped with 2 mol % Na (Pb_0.94Na_0.02Sr_0.04Te) is a nanostructured material system that exhibits a ZT higher than 2. The precipitate size distribution of SrTe precipitates is believed to play a key role. This raises the question of whether its performance is limited by precipitate coarsening (Ostwald ripening) at elevated temperatures. Herein, we utilize an atom-probe tomography (APT) to study the number density and mean radii of precipitates in concert with partial radial distribution functions (RDFs) of individual atoms. We find that the SrTe precipitates actually contain oxygen: SrTe_1-xO_x. We correlate this information with the overall ZT performance, specifically focusing on the electrical and lattice thermal conductivities after isothermal heat treatments at 300 and 400 °C for 7 days, followed by furnace cooling. Comparison of the samples annealed at 400 and 300 °C demonstrates significant coarsening of SrTe_1-xO_x precipitates as well as strong segregation of oxygen impurities in the SrTe_1-xO_x precipitates. Additionally, on the basis of the partial RDFs, the Na dopant atoms cluster with other Na atoms as well as with Pb, Te, and Sr atoms; clustering depends strongly on the annealing temperature and concomitantly affects the overall ZT values. We found that the coarsening slightly increases the lattice thermal conductivity and also increases the electrical conductivity, thereby having little or even a beneficial effect on the ZT values. Importantly, these findings demonstrate that APT enables quantitative analyses in three dimensions of the PbTe-4 mol % SrTe samples in addition to correlation of their properties with the thermoelectric performance.

True Atomic-Scale Imaging in Three Dimensions: A Review of the Rebirth of Field-Ion Microscopy

This article reviews recent advances utilizing field-ion microscopy (FIM) to extract atomic-scale three-dimensional images of materials. This capability is not new, as the first atomic-scale reconstructions of features utilizing FIM were demonstrated decades ago. The rise of atom probe tomography, and the application of this latter technique in place of FIM has unfortunately severely limited further FIM development. Currently, the ubiquitous availability of extensive computing power makes it possible to treat and reconstruct FIM data digitally and this development allows the image sequences obtained utilizing FIM to be extremely valuable for many material science and engineering applications. This article demonstrates different applications of these capabilities, focusing on its use in physical metallurgy and semiconductor science and technology.

Microstructure and Creep Properties of Boron- and Zirconium-Containing Cobalt-based Superalloys

The effects of micro-additions of boron and zirconium on grain-boundary (GB) structure and strength in polycrystalline γ(f.c.c.) plus γ'(L1₂) strengthened Co-9.5Al-7.5W-X at. % alloys (X = 0-Temary, 0.05B, 0.01B, 0.05Zr, and 0.005B-0.05Zr at. %) are studied. Creep tests performed at 850 °C demonstrate that GB strength and cohesion limit the creep resistance and ductility of the ternary B- and Zr-free alloy due to intergranular fracture. Alloys with 0.05B and 0.005B-0.05Zr both exhibit improved creep strength due to enhanced GB cohesion, compared to the baseline ternary Co-9.5Al-7.5W alloy, but alloys containing 0.01B or 0.05Zr additions displayed no benefit. Atom-probe tomography is utilized to measure GB segregation, where B and Zr are demonstrated to segregate at GBs. A Gibbsian interfacial excess of 5.57 ± 1.04 atoms nm^-2 was found for B at a GB in the 0.01B alloy and 2.88 ± 0.81 and 2.40 ± 0.84 atoms nm^-2 for B and Zr, respectively, for the 0.005B-0.05Zr alloy. The GBs in the highest B-containing (0.05B) alloy exhibit micrometer-sized boride precipitates with adjacent precipitate denuded-zones (PDZs), whereas secondary precipitation at the GBs is not present in the other four alloys. The 0.05B alloy has the smallest room temperature yield strength, by 6 %, which is attributed to the PDZs, but it exhibits the largest increase in creep strength (with an ~2.5 order of magnitude decrease in the minimum strain rate for a given stress at 850 °C) over the baseline Co-9.5Al-7.5W alloy.

Heterogeneous silicon mesostructures for lipid-supported bioelectric interfaces

Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multi-scale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical vapour deposition process. It has an amorphous atomic structure, an ordered nanowire-based framework and random submicrometre voids, and shows an average Young's modulus that is 2-3 orders of magnitude smaller than that of single-crystalline silicon. In addition, we used the heterogeneous silicon mesostructures to design a lipid-bilayer-supported bioelectric interface that is remotely controlled and temporally transient, and that permits non-genetic and subcellular optical modulation of the electrophysiology dynamics in single dorsal root ganglia neurons. Our findings suggest that the biomimetic expansion of silicon into heterogeneous and deformable forms can open up opportunities in extracellular biomaterial or bioelectric systems.

Dopant Diffusion and Activation in Silicon Nanowires Fabricated by ex Situ Doping: A Correlative Study via Atom-Probe Tomography and Scanning Tunneling Spectroscopy

Dopants play a critical role in modulating the electric properties of semiconducting materials, ranging from bulk to nanoscale semiconductors, nanowires, and quantum dots. The application of traditional doping methods developed for bulk materials involves additional considerations for nanoscale semiconductors because of the influence of surfaces and stochastic fluctuations, which may become significant at the nanometer-scale level. Monolayer doping is an ex situ doping method that permits the post growth doping of nanowires. Herein, using atom-probe tomography (APT) with subnanometer spatial resolution and atomic-ppm detection limit, we study the distributions of boron and phosphorus in ex situ doped silicon nanowires with accurate control. A highly phosphorus doped outer region and a uniformly boron doped interior are observed, which are not predicted by criteria based on bulk silicon. These phenomena are explained by fast interfacial diffusion of phosphorus and enhanced bulk diffusion of boron, respectively. The APT results are compared with scanning tunneling spectroscopy data, which yields information concerning the electrically active dopants. Overall, comparing the information obtained by the two methods permits us to evaluate the diffusivities of each different dopant type at the nanowire oxide, interface, and core regions. The combined data sets permit us to evaluate the electrical activation and compensation of the dopants in different regions of the nanowires and understand the details that lead to the sharp p-i-n junctions formed across the nanowire for the ex situ doping process.

Evidence of sub-10 nm aluminum-oxygen precipitates in silicon

In this research, ultraviolet laser-assisted atom-probe tomography (APT) was utilized to investigate precisely the behavior at the atomistic level of aluminum impurities in ultrathin epitaxial silicon layers. Aluminum atoms were incorporated in situ during the growth process. The measured average aluminum concentration in the grown layers exceeds by several orders of magnitude the equilibrium bulk solubility. Three-dimensional atom-by-atom mapping demonstrates that aluminum atoms precipitate in the silicon matrix and form nanoscopic precipitates with lateral dimensions in the 1.3 to 6.2 nm range. These precipitates were found to form only in the presence of oxygen impurity atoms, thus providing clear evidence of the longhypothesized role of oxygen and aluminum-oxygen complexes in facilitating the precipitation of aluminum in a silicon lattice. The measured average aluminum and oxygen concentrations in the precipitates are ∼10 ± 0.5 at.% and ∼4.4 ± 0.5 at.%, respectively. This synergistic interaction is supported by first-principles calculations of the binding energies of aluminum-oxygen dimers in silicon. The calculations demonstrate that there is a strong binding between aluminum and oxygen atoms, with Al-O-Al and O-Al-Al as the energetically favorable sequences corresponding to precipitates in which the concentration of aluminum is twice as large as the oxygen concentration in agreement with APT data.

Laser-Assisted Field Evaporation and Three-Dimensional Atom-by-Atom Mapping of Diamond Isotopic Homojunctions

It addition to its high evaporation field, diamond is also known for its limited photoabsorption, strong covalent bonding, and wide bandgap. These characteristics have been thought for long to also complicate the field evaporation of diamond and make its control hardly achievable on the atomistic-level. Herein, we demonstrate that the unique behavior of nanoscale diamond and its interaction with pulsed laser lead to a controlled field evaporation thus enabling three-dimensional atom-by-atom mapping of diamond (12)C/(13)C homojunctions. We also show that one key element in this process is to operate the pulsed laser at high energy without letting the dc bias increase out of bounds for diamond nanotip to withstand. Herein, the role of the dc bias in evaporation of diamond is essentially to generate free charge carriers within the nanotip via impact ionization. The mobile free charges screen the internal electric field, eventually creating a hole rich surface where the pulsed laser is effectively absorbed leading to an increase in the nanotip surface temperature. The effect of this temperature on the uncertainty in the time-of-flight of an ion, the diffusion of atoms on the surface of the nanotip, is also discussed. In addition to paving the way toward a precise manipulation of isotopes in diamond-based nanoscale and quantum structures, this result also elucidates some of the basic properties of dielectric nanostructures under high electric field.

An Atomistic Tomographic Study of Oxygen and Hydrogen Atoms and their Molecules in CVD Grown Graphene

The properties and growth processes of graphene are greatly influenced by the elemental distributions of impurity atoms and their functional groups within or on the hexagonal carbon lattice. Oxygen and hydrogen atoms and their functional molecules (OH, CO, and CO2 ) positions' and chemical identities are tomographically mapped in three dimensions in a graphene monolayer film grown on a copper substrate, at the atomic part-per-million (atomic ppm) detection level, employing laser assisted atom-probe tomography. The atomistic plan and cross-sectional views of graphene indicate that oxygen, hydrogen, and their co-functionalities, OH, CO, and CO2 , which are locally clustered under or within the graphene lattice. The experimental 3D atomistic portrait of the chemistry is combined with computational density-functional theory (DFT) calculations to enhance the understanding of the surface state of graphene, the positions of the chemical functional groups, their interactions with the underlying Cu substrate, and their influences on the growth of graphene.

An Efficient and Cost-Effective Method for Preparing Transmission Electron Microscopy Samples from Powders

The preparation of transmission electron microcopy (TEM) samples from powders with particle sizes larger than ~100 nm poses a challenge. The existing methods are complicated and expensive, or have a low probability of success. Herein, we report a modified methodology for preparation of TEM samples from powders, which is efficient, cost-effective, and easy to perform. This method involves mixing powders with an epoxy on a piece of weighing paper, curing the powder-epoxy mixture to form a bulk material, grinding the bulk to obtain a thin foil, punching TEM discs from the foil, dimpling the discs, and ion milling the dimpled discs to electron transparency. Compared with the well established and robust grinding-dimpling-ion-milling method for TEM sample preparation for bulk materials, our modified approach for preparing TEM samples from powders only requires two additional simple steps. In this article, step-by-step procedures for our methodology are described in detail, and important strategies to ensure success are elucidated. Our methodology has been applied successfully for preparing TEM samples with large thin areas and high quality for many different mechanically milled metallic powders.

Phonon Engineering in Isotopically Disordered Silicon Nanowires

The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. With this perspective, we report on phonon engineering in metal-catalyzed silicon nanowires with tailor-made isotopic compositions grown using isotopically enriched silane precursors (28)SiH4, (29)SiH4, and (30)SiH4 with purity better than 99.9%. More specifically, isotopically mixed nanowires (28)Si(x)(30)Si(1-x) with a composition close to the highest mass disorder (x ∼ 0.5) were investigated. The effect of mass disorder on the phonon behavior was elucidated and compared to that in isotopically pure (29)Si nanowires having a similar reduced mass. We found that the disorder-induced enhancement in phonon scattering in isotopically mixed nanowires is unexpectedly much more significant than in bulk crystals of close isotopic compositions. This effect is explained by a nonuniform distribution of (28)Si and (30)Si isotopes in the grown isotopically mixed nanowires with local compositions ranging from x = ∼0.25 to 0.70. Moreover, we also observed that upon heating, phonons in (28)Si(x)(30)Si(1-x) nanowires behave remarkably differently from those in (29)Si nanowires suggesting a reduced thermal conductivity induced by mass disorder. Using Raman nanothermometry, we found that the thermal conductivity of isotopically mixed (28)Si(x)(30)Si(1-x) nanowires is ∼30% lower than that of isotopically pure (29)Si nanowires in agreement with theoretical predictions.

Atom-Probe Tomographic Analyses of Hydrogen Interstitial Atoms in Ultrahigh Purity Niobium

Atomic-scale characterization of hydrogen and formation of niobium hydrides, using ultraviolet (wavelength=355 nm) picosecond laser-assisted local-electrode atom-probe tomography, was performed for ultrahigh purity niobium utilizing different laser pulse energies, 10 or 50 pJ/pulse or voltage pulsing. At 50 pJ/pulse, hydrogen atoms migrate onto the 110 and 111 poles as a result of stimulated surface diffusion, whereas they are immobile for <10 pJ/pulse or for voltage pulsing. Accordingly, the highest concentrations of H and NbH were obtained at 50 pJ/pulse. This is attributed to the thermal energy of the laser pulses being transferred to pure niobium specimens. Therefore, we examined the effects of the laser pulse energy being increased systematically from 1 to 20 pJ/pulse and then decreasing it from 20 to 1 pJ/pulse. The concentrations of H, H2, and NbH and the atomic concentration ratios H2/H, NbH/Nb, and Nb3+/Nb2+ were calculated with respect to the systematically changing laser pulse energies. The atomic concentration ratios H2/H and NbH/Nb are greater when decreasing the laser pulse energy than when increasing it, because the higher residual thermal energy after decreasing the laser pulse energy increases the mobility of H atoms by supplying sufficient thermal energy to form H2 or NbH.

A model Ni-Al-Mo superalloy studied by ultraviolet pulsed-laser-assisted local-electrode atom-probe tomography

This study investigates the effects of the charge-state ratio of evaporated ions on the accuracy of local-electrode atom-probe (LEAP) tomographic compositional and structural analyses, which employs a picosecond ultraviolet pulsed laser. Experimental results demonstrate that the charge-state ratio is a better indicator of the best atom-probe tomography (APT) experimental conditions compared with laser pulse energy. The thermal tails in the mass spectra decrease significantly, and the mass resolving power (m/Δm) increases by 87.5 and 185.7% at full-width half-maximum and full-width tenth-maximum, respectively, as the laser pulse energy is increased from 5 to 30 pJ/pulse. The measured composition of this alloy depends on the charge-state ratio of the evaporated ions, and the most accurate composition is obtained when Ni2+/Ni+ is in the range of 0.3-20. The γ(f.c.c.)/γ'(L12) interface is quantitatively more diffuse when determined from the measured concentration profiles for higher laser pulse energies. Conclusions of the APT compositional and structural analyses utilizing the same suitable charge-state ratio are more comparable than those collected with the same laser pulse energy.

Observation of self-assembled core-shell structures in epitaxially embedded TbErAs nanoparticles

Self-assembled core-shell structured rare-earth nanoparticles (TbErAs) are observed in a III-V semiconductor host matrix (In0.53Ga0.47As) nominally lattice-matched to InP, grown via molecular beam epitaxy. Atom probe tomography demonstrates that the TbErAs nanoparticles have a core-shell structure, as seen both in the tomographic atom-by-atom reconstruction and concentration profiles. A simple thermodynamic model is created to determine when it is energetically favorable to have core-shell structures; the results strongly agree with the observations.

Co-precipitated and collocated carbides and Cu-rich precipitates in a Fe-Cu steel characterized by atom-probe tomography

The composition of co-precipitated and collocated NbC carbide precipitates, Fe3C iron carbide (cementite), and Cu-rich precipitates are studied experimentally by atom-probe tomography (APT). The Cu-rich precipitates located at a grain boundary (GB) are also studied. The APT results for the carbides are supplemented with computational thermodynamics predictions of composition at thermodynamic equilibrium. Two types of NbC carbide precipitates are distinguished based on their stoichiometric ratio and size. The Cu-rich precipitates at the periphery of the iron carbide and at the GB are larger than those distributed in the α-Fe (body-centered cubic) matrix, which is attributed to short-circuit diffusion of Cu along the GB. Manganese segregation is not observed at the heterophase interfaces of the Cu-rich precipitates that are located at the periphery of the iron carbide or at the GB, which is unlike those located at the edge of the NbC carbide precipitates or distributed in the α-Fe matrix. This suggests the presence of two populations of NiAl-type (B2 structure) phases at the heterophase interfaces in multicomponent Fe-Cu steels.

Preparation of nanowire specimens for laser-assisted atom probe tomography

The availability of reliable and well-engineered commercial instruments and data analysis software has led to development in recent years of robust and ergonomic atom-probe tomographs. Indeed, atom-probe tomography (APT) is now being applied to a broader range of materials classes that involve highly important scientific and technological problems in materials science and engineering. Dual-beam focused-ion beam microscopy and its application to the fabrication of APT microtip specimens have dramatically improved the ability to probe a variety of systems. However, the sample preparation is still challenging especially for emerging nanomaterials such as epitaxial nanowires which typically grow vertically on a substrate through metal-catalyzed vapor phase epitaxy. The size, morphology, density, and sensitivity to radiation damage are the most influential parameters in the preparation of nanowire specimens for APT. In this paper, we describe a step-by-step process methodology to allow a precisely controlled, damage-free transfer of individual, short silicon nanowires onto atom probe microposts. Starting with a dense array of tiny nanowires and using focused ion beam, we employed a sequence of protective layers and markers to identify the nanowire to be transferred and probed while protecting it against Ga ions during lift-off processing and tip sharpening. Based on this approach, high-quality three-dimensional atom-by-atom maps of single aluminum-catalyzed silicon nanowires are obtained using a highly focused ultraviolet laser-assisted local electrode atom probe tomograph.

Direct atomic-scale imaging of hydrogen and oxygen interstitials in pure niobium using atom-probe tomography and aberration-corrected scanning transmission electron microscopy

Imaging the three-dimensional atomic-scale structure of complex interfaces has been the goal of many recent studies, due to its importance to technologically relevant areas. Combining atom-probe tomography and aberration-corrected scanning transmission electron microscopy (STEM), we present an atomic-scale study of ultrathin (~5 nm) native oxide layers on niobium (Nb) and the formation of ordered niobium hydride phases near the oxide/Nb interface. Nb, an elemental type-II superconductor with the highest critical temperature (T(c) = 9.2 K), is the preferred material for superconducting radio frequency (SRF) cavities in next-generation particle accelerators. Nb exhibits high solubilities for oxygen and hydrogen, especially within the RF-field penetration depth, which is believed to result in SRF quality factor losses. STEM imaging and electron energy-loss spectroscopy followed by ultraviolet laser-assisted local-electrode atom-probe tomography on the same needle-like sample reveals the NbO(2), Nb(2)O(5), NbO, Nb stacking sequence; annular bright-field imaging is used to visualize directly hydrogen atoms in bulk β-NbH.

A method for directly correlating site-specific cross-sectional and plan-view transmission electron microscopy of individual nanostructures

A sample preparation method is described for enabling direct correlation of site-specific plan-view and cross-sectional transmission electron microscopy (TEM) analysis of individual nanostructures by employing a dual-beam focused-ion beam (FIB) microscope. This technique is demonstrated using Si nanowires dispersed on a TEM sample support (lacey carbon or Si-nitride). Individual nanowires are first imaged in the plan-view orientation to identify a region of interest; in this case, impurity atoms distributed at crystalline defects that require further investigation in the cross-sectional orientation. Subsequently, the region of interest is capped with a series of ex situ and in situ deposited layers to protect the nanowire and facilitate site-specific lift-out and cross-sectioning using a dual-beam FIB microscope. The lift-out specimen is thinned to electron transparency with site-specific positioning to within ≈ 200 nm of a target position along the length of the nanowire. Using the described technique, it is possible to produce correlated plan-view and cross-sectional view lattice-resolved TEM images that enable a quasi-3D analysis of crystalline defect structures in a specific nanowire. While the current study is focused on nanowires, the procedure described herein is general for any electron-transparent sample and is broadly applicable for many nanostructures, such as nanowires, nanoparticles, patterned thin films, and devices.

Morphology control of nanostructures: Na-doped PbTe-PbS system

The morphology of crystalline precipitates in a solid-state matrix is governed by complex but tractable energetic considerations driven largely by volume strain energy minimization and anisotropy of interfacial energies. Spherical precipitate morphologies are favored by isotropic systems, while anisotropic interfacial energies give energetic preference to certain crystallographically oriented interfaces, resulting in a faceted precipitate morphology. In conventional solid-solution precipitation, a precipitate's morphological evolution is mediated by surface anchoring of capping molecules, which dramatically alter the surface energy in an anisotropic manner, thereby providing exquisite morphology control during crystal growth. Herein, we present experimental evidence and theoretical validation for the role of a ternary element (Na) in controlling the morphology of nanoscale PbS crystals nucleating in a PbTe matrix, an important bulk thermoelectric system. The PbS nanostructures formed by phase separation from a PbI(2)-doped or undoped PbTe matrix have irregular morphologies. However, replacing the iodine dopant with Na (1-2 mol %) alters dramatically the morphology of the PbS precipitates. Segregation of Na at PbTe/PbS interfaces result in cuboidal and truncated cuboidal morphologies for PbS. Using analytical scanning/transmission electron microscopy and atom-probe tomography, we demonstrate unambiguously that Na partitions to the precipitates and segregates at the matrix/precipitate interfaces, inducing morphological anisotropy of PbS precipitates. First-principles and semiclassical calculations reveal that Na as a solute in PbTe has a higher energy than in PbS and that Na segregation at a (100) PbTe/PbS interface decreases the total energy of matrix/precipitate system, resulting in faceting of PbS precipitates. These results provide an impetus for a new strategy for controlling morphological evolution in matrix/precipitate systems, mediated by solute partitioning of ternary additions.

Atom-probe tomography of nickel-based superalloys with green or ultraviolet lasers: a comparative study

Recent developments in the technology of laser-pulsed local-electrode atom-probe (LEAP) tomography include a picosecond ultraviolet (UV) laser system having a 355 nm wavelength and both external and in-vacuum optics. This approach ensures focusing of the laser beam to a smaller spot diameter than has heretofore been obtained using a green (532 nm wavelength) picosecond laser. We compare the mass spectra acquired, using either green or UV laser pulsing, from nickel-based superalloy specimens prepared either electrochemically or by lifting-out from bulk material using ion-beam milling in a dual-beam focused ion beam microscope. The utilization of picosecond UV laser pulsing yields improved mass spectra, which manifests itself in higher signal-to-noise ratios and mass-resolving power (m/Δm) in comparison to green laser pulsing. We employ LEAP tomography to investigate the formation of misoriented defects in nickel-based superalloys and demonstrate that UV laser pulsing yields better accuracy in compositional quantification than does green laser pulsing. Furthermore, we show that using a green laser the quality of mass spectra collected from specimens that were lifted-out by ion milling is usually poorer than for electrochemically-sharpened specimens. Employing UV laser pulsing yields, however, improved mass spectra in comparison to green laser pulsing even for ion-milled microtips.

Voltage-pulsed and laser-pulsed atom probe tomography of a multiphase high-strength low-carbon steel

The differences in artifacts associated with voltage-pulsed and laser-pulsed (wavelength = 532 or 355 nm) atom-probe tomographic (APT) analyses of nanoscale precipitation in a high-strength low-carbon steel are assessed using a local-electrode atom-probe tomograph. It is found that the interfacial width of nanoscale Cu precipitates increases with increasing specimen apex temperatures induced by higher laser pulse energies (0.6-2 nJ pulse(-1) at a wavelength of 532 nm). This effect is probably due to surface diffusion of Cu atoms. Increasing the specimen apex temperature by using pulse energies up to 2 nJ pulse(-1) at a wavelength of 532 nm is also found to increase the severity of the local magnification effect for nanoscale M2C metal carbide precipitates, which is indicated by a decrease of the local atomic density inside the carbides from 68 ± 6 nm(-3) (voltage pulsing) to as small as 3.5 ± 0.8 nm(-3). Methods are proposed to solve these problems based on comparisons with the results obtained from voltage-pulsed APT experiments. Essentially, application of the Cu precipitate compositions and local atomic density of M2C metal carbide precipitates measured by voltage-pulsed APT to 532 or 355 nm wavelength laser-pulsed data permits correct quantification of precipitation.

Simultaneous segregation at coherent and semicoherent heterophase interfaces

By employing a combination of three-dimensional atom-probe tomography and first-principles calculations, significant qualitative and quantitative differences in solute segregation at coherent and semicoherent interfaces bounding a single θ^{'} precipitate in an Al-Cu-based alloy are found. Qualitatively, localized segregation is observed at the semicoherent interface, whereas delocalized behavior is present at the coherent facets. Quantitatively, segregation at the semicoherent interface is a factor of 2 greater than at the coherent interface, resulting in a decrease in interfacial energy that is more than 5 times greater than that observed at the coherent facet. These observations illustrate unambiguously the strong couplings among interface structure, chemical composition, and energetics.

On the field evaporation behavior of a model Ni-Al-Cr superalloy studied by picosecond pulsed-laser atom-probe tomography

The effects of varying the pulse energy of a picosecond laser used in the pulsed-laser atom-probe (PLAP) tomography of an as-quenched Ni-6.5 Al-9.5 Cr at.% alloy are assessed based on the quality of the mass spectra and the compositional accuracy of the technique. Compared to pulsed-voltage atom-probe tomography, PLAP tomography improves mass resolving power, decreases noise levels, and improves compositional accuracy. Experimental evidence suggests that Ni2+, Al2+, and Cr2+ ions are formed primarily by a thermally activated evaporation process, and not by post-ionization of the ions in the 1+ charge state. An analysis of the detected noise levels reveals that for properly chosen instrument parameters, there is no significant steady-state heating of the Ni-6.5 Al-9.5 Cr at.% tips during PLAP tomography.

Atom probe tomographic studies of precipitation in Al-0.1Zr-0.1Ti (at.%) alloys

Atom probe tomography was utilized to measure directly the chemical compositions of Al(3)(Zr(1)-(x)Ti(x)) precipitates with a metastable L1(2) structure formed in Al-0.1Zr-0.1Ti (at.%) alloys upon aging at 375 degrees C or 425 degrees C. The alloys exhibit an inhomogeneous distribution of Al(3)(Zr(1)-(x)Ti(x)) precipitates, as a result of a nonuniform dendritic distribution of solute atoms after casting. At these aging temperatures, the Zr:Ti atomic ratio in the precipitates is about 10 and 5, respectively, indicating that Ti remains mainly in solid solution rather than partitioning to the Al(3)(Zr(1)-(x)Ti(x)) precipitates. This is interpreted as being due to the very small diffusivity of Ti in alpha-Al, consistent with prior studies on Al-Sc-Ti and Al-Sc-Zr alloys, where the slower diffusing Zr and Ti atoms make up a small fraction of the Al(3)(Zr(1)-(x)Ti(x)) precipitates. Unlike those alloys, however, the present Al-Zr-Ti alloys exhibit no interfacial segregation of Ti at the matrix/precipitate heterophase interface, a result that may be affected by a significant disparity in the evaporation fields of the alpha-Al matrix and Al(3)(Zr(1)-(x)Ti(x)) precipitates and/or a lack of local thermodynamic equilibrium at the interface.

Effects of 10MeV electron irradiation at high temperature of a Ni–Mo-based Hastelloy

A Hastelloy alloy was irradiated with 10 MeV electrons at 650 degrees C for 700 h to a total dose of 2 x 10(-3) displacements per atom (dpa). The microstructure of irradiated and non-irradiated specimens of this alloy were investigated by transmission electron microscopy (TEM). The non-irradiated specimens were analyzed by 3-D atom probe tomography (APT) in a local-electrode atom-probe (LEAP). TEM analysis before the irradiation detects small precipitates with a mean diameter of 22 nm, which are coherent with the FCC matrix. The number density of these precipitates is approximately 7 x 10(18) m(-3). Electron diffraction patterns from these precipitates exhibit superlattice reflections corresponding to the L1(2) ordered structure. The chemical composition of the precipitates, as measured by APT, is around 75 at% Ni with additions of Al, Ti and Mo. After electron irradiation, small precipitates with an irregular morphology are observed. The number density of these new precipitates about 10(20) m(-3) is greater than that of the L1(2) ordered precipitates before irradiation. The L1(2) superlattice reflections disappear completely, instead diffuse diffraction spots are observed at 1(1/2)0(FCC), which is attributed to compositional short-range order (SRO). The results are discussed with respect to the influence of the electron irradiation on the morphology and structure of the ordered precipitates.

Comparison of compositional and morphological atom-probe tomography analyses for a multicomponent Fe-Cu steel

A multicomponent Fe-Cu based steel is studied using atom-probe tomography. The precipitates are identified using two different methodologies and subsequent morphological and compositional results are compared. The precipitates are first identified using a maximum separation distance algorithm, the envelope method, and then by a concentration threshold method, an isoconcentration surface. We discuss in detail the proper selection of the parameters needed to delineate precipitates utilizing both methods. The results of the two methods exhibit a difference of 44 identified precipitates, which can be attributed to differences in the basis of both methods and the sensitivity of our results to user-prescribed parameters. The morphology of the precipitates, characterized by four different precipitate radii and precipitate size distribution functions (PSDs), are compared and evaluated. A variation of less than approximately 8% is found between the different radii. Two types of concentration profiles are compared, giving qualitatively similar results. Both profiles show Cu-rich precipitates containing Fe with elevated concentrations of Ni, Al, and Mn near the heterophase interfaces. There are, however, quantitative disagreements due to differences in the basic foundations of the two analysis methods.

The mechanism of morphogenesis in a phase-separating concentrated multicomponent alloy

What determines the morphology of a decomposing alloy? Besides the well-established effect of the nucleation barrier, we demonstrate that, in a concentrated multicomponent Ni(Al,Cr) alloy, the details of the diffusion mechanism strongly affect the kinetic pathway of precipitation. Our argument is based on the combined use of atomic-scale observations, using three-dimensional atom-probe tomography (3D APT), lattice kinetic Monte Carlo simulations and the theory of diffusion. By an optimized choice of thermodynamic and kinetic parameters, we first reproduce the 3D APT observations, in particular the early-stage transient occurrence of coagulated precipitates. We then modify the kinetic correlations among the atomic fluxes in the simulation, without altering the thermodynamic driving force for phase separation, by changing the vacancy-solute interactions, resulting in a suppression of coagulation. Such changes can only be quantitatively accounted for with non-zero values for the off-diagonal terms of the Onsager matrix, at variance with classical models.