1
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Slavich AS, Ermolaev GA, Tatmyshevskiy MK, Toksumakov AN, Matveeva OG, Grudinin DV, Voronin KV, Mazitov A, Kravtsov KV, Syuy AV, Tsymbarenko DM, Mironov MS, Novikov SM, Kruglov I, Ghazaryan DA, Vyshnevyy AA, Arsenin AV, Volkov VS, Novoselov KS. Exploring van der Waals materials with high anisotropy: geometrical and optical approaches. Light Sci Appl 2024; 13:68. [PMID: 38453886 PMCID: PMC10920635 DOI: 10.1038/s41377-024-01407-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 01/22/2024] [Accepted: 02/01/2024] [Indexed: 03/09/2024]
Abstract
The emergence of van der Waals (vdW) materials resulted in the discovery of their high optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates high in-plane optical anisotropy that is ~20% larger than for rutile and over two times as large as calcite, high refractive index, and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-wave plate that combines classical and the Fabry-Pérot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.
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Affiliation(s)
- Aleksandr S Slavich
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Georgy A Ermolaev
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
| | | | - Adilet N Toksumakov
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Olga G Matveeva
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Dmitriy V Grudinin
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
| | - Kirill V Voronin
- Donostia International Physics Center (DIPC), Donostia/San-Sebastián, 20018, Spain
| | - Arslan Mazitov
- Institute of Materials, École Polytechnique Fédérale de Lausanne, 1015, Lausanne, Switzerland
| | | | - Alexander V Syuy
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
| | - Dmitry M Tsymbarenko
- Department of Chemistry, Lomonosov Moscow State University, Moscow, 119991, Russia
| | - Mikhail S Mironov
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
| | - Sergey M Novikov
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Ivan Kruglov
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
| | - Davit A Ghazaryan
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Andrey A Vyshnevyy
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
| | - Aleksey V Arsenin
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Valentyn S Volkov
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Kostya S Novoselov
- National Graphene Institute (NGI), University of Manchester, Manchester, M13 9PL, UK.
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 03-09 EA, Singapore.
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore, Singapore.
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2
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Ermolaev GA, Voronin KV, Toksumakov AN, Grudinin DV, Fradkin IM, Mazitov A, Slavich AS, Tatmyshevskiy MK, Yakubovsky DI, Solovey VR, Kirtaev RV, Novikov SM, Zhukova ES, Kruglov I, Vyshnevyy AA, Baranov DG, Ghazaryan DA, Arsenin AV, Martin-Moreno L, Volkov VS, Novoselov KS. Wandering principal optical axes in van der Waals triclinic materials. Nat Commun 2024; 15:1552. [PMID: 38448442 PMCID: PMC10918091 DOI: 10.1038/s41467-024-45266-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 01/19/2024] [Indexed: 03/08/2024] Open
Abstract
Nature is abundant in material platforms with anisotropic permittivities arising from symmetry reduction that feature a variety of extraordinary optical effects. Principal optical axes are essential characteristics for these effects that define light-matter interaction. Their orientation - an orthogonal Cartesian basis that diagonalizes the permittivity tensor, is often assumed stationary. Here, we show that the low-symmetry triclinic crystalline structure of van der Waals rhenium disulfide and rhenium diselenide is characterized by wandering principal optical axes in the space-wavelength domain with above π/2 degree of rotation for in-plane components. In turn, this leads to wavelength-switchable propagation directions of their waveguide modes. The physical origin of wandering principal optical axes is explained using a multi-exciton phenomenological model and ab initio calculations. We envision that the wandering principal optical axes of the investigated low-symmetry triclinic van der Waals crystals offer a platform for unexplored anisotropic phenomena and nanophotonic applications.
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Affiliation(s)
- Georgy A Ermolaev
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
| | - Kirill V Voronin
- Donostia International Physics Center (DIPC), Donostia/San Sebastián, 20018, Spain
| | - Adilet N Toksumakov
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Dmitriy V Grudinin
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
| | - Ilia M Fradkin
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
| | - Arslan Mazitov
- Institute of Materials, École Polytechnique Fédérale de Lausanne, 1015, Lausanne, Switzerland
| | - Aleksandr S Slavich
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | | | - Dmitry I Yakubovsky
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Valentin R Solovey
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
| | - Roman V Kirtaev
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
| | - Sergey M Novikov
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Elena S Zhukova
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Ivan Kruglov
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
| | - Andrey A Vyshnevyy
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
| | - Denis G Baranov
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - Davit A Ghazaryan
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Aleksey V Arsenin
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Luis Martin-Moreno
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009, Zaragoza, Spain
- Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50009, Zaragoza, Spain
| | - Valentyn S Volkov
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - Kostya S Novoselov
- National Graphene Institute (NGI), University of Manchester, Manchester, M13 9PL, UK.
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 03-09, Singapore.
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore, Singapore.
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3
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Panova DA, Tselikov GI, Ermolaev GA, Syuy AV, Zimbovskii DS, Kapitanova OO, Yakubovsky DI, Mazitov AB, Kruglov IA, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband optical properties of Ti 3C 2 MXene revisited. Opt Lett 2024; 49:25-28. [PMID: 38134143 DOI: 10.1364/ol.503636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 10/13/2023] [Indexed: 12/24/2023]
Abstract
The exceptional optical, electrical, and mechanical capabilities of layered transition metal carbides, nitrides, and carbonitrides, called MXenes, revolutionized materials science. Among them, Ti3C2 received the most attention owing to the developed synthesis and processing methods, high conductivity, and pronounced plasmonic response. The latter, however, remains controversial with the open question of whether the peak around 800 nm has plasmonic or interband transition origin. To address this issue, we combine spectroscopic ellipsometry and transmittance results with first-principle computations. Their combination reveals that although Ti3C2 is a metal, its optical response becomes plasmonic (Re ε < 0) above 1415 nm, in contrast to the previous understanding. In addition to fundamental significance, this dual dielectric/plasmonic optical response opens a path for theranostic applications, as we demonstrated on the example of Ti3C2 nanospheres. Thus, our study revisits broadband (300-3300 nm) optical constants of Ti3C2 and broadens its application scope in photonics.
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4
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Yakubovsky DI, Grudinin DV, Ermolaev GA, Voronin K, Svintsov DA, Vyshnevyy AA, Mironov MS, Arsenin AV, Volkov VS. Optical Nanoimaging of Surface Plasmon Polaritons Supported by Ultrathin Metal Films. Nano Lett 2023; 23:9461-9467. [PMID: 37811878 DOI: 10.1021/acs.nanolett.3c02947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
The physics of electrons, photons, and their plasmonic interactions change dramatically when one or more dimensions are reduced to atomic-level thicknesses. For example, graphene exhibits unique electrical, plasmonic, and optical properties. Likewise, atomic-thick metal films are expected to exhibit extraordinary quantum optical properties. Several methods of growing ultrathin metal films were demonstrated, but the quality of the obtained films was much worse compared to bulk films. In this work, we propose a new method of making ultrathin gold films that are close in their properties to bulk gold films. Excellent plasmonic properties are revealed by directly observing quasi-short- and quasi-long-range plasmons in such a film via scanning near-field optical microscopy. The results pave the way for the use of ultrathin gold films in flexible and transparent nanophotonics and optoelectronic applications.
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Affiliation(s)
| | - Dmitriy V Grudinin
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai 00000, United Arab Emirates
| | - Georgy A Ermolaev
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai 00000, United Arab Emirates
| | - Kirill Voronin
- Donostia International Physics Center (DIPC), Donostia/San Sebastián 20018, Spain
| | - Dmitry A Svintsov
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow 140829, Russia
| | - Andrey A Vyshnevyy
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai 00000, United Arab Emirates
| | - Mikhail S Mironov
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai 00000, United Arab Emirates
| | - Aleksey V Arsenin
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai 00000, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
| | - Valentyn S Volkov
- Emerging Technologies Research Center, XPANCEO, Internet City, Emmay Tower, Dubai 00000, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
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5
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Vyshnevyy AA, Ermolaev GA, Grudinin DV, Voronin KV, Kharichkin I, Mazitov A, Kruglov IA, Yakubovsky DI, Mishra P, Kirtaev RV, Arsenin AV, Novoselov KS, Martin-Moreno L, Volkov VS. van der Waals Materials for Overcoming Fundamental Limitations in Photonic Integrated Circuitry. Nano Lett 2023; 23:8057-8064. [PMID: 37615652 DOI: 10.1021/acs.nanolett.3c02051] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
With the advance of on-chip nanophotonics, there is a high demand for high-refractive-index and low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with a high refractive index can offer a very advanced alternative. Still, up to now, it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development of vdW nanophotonics. Here, we studied WS2-based waveguides in terms of their optical properties and, particularly, in terms of possible crosstalk distance. Surprisingly, we discovered that the low refractive index in the direction perpendicular to the atomic layers improves the characteristics of such devices, mainly due to expanding the range of parameters at which single-mode propagation can be achieved. Thus, using anisotropic materials offers new opportunities and novel control knobs when designing nanophotonic devices.
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Affiliation(s)
- Andrey A Vyshnevyy
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow 123592, Russia
| | - Georgy A Ermolaev
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates
| | - Dmitriy V Grudinin
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates
| | - Kirill V Voronin
- Donostia International Physics Center (DIPC), Donostia/San Sebastián 20018, Spain
| | - Ivan Kharichkin
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow 123592, Russia
| | - Arslan Mazitov
- Institute of Materials, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Ivan A Kruglov
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow 123592, Russia
| | | | - Prabhash Mishra
- Quantum Materials and Devices Laboratory, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), Jamia Nagar, New Delhi, 110025, India
| | - Roman V Kirtaev
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates
| | - Aleksey V Arsenin
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
| | - Kostya S Novoselov
- National Graphene Institute, University of Manchester, Manchester M13 9PL, United Kingdom
- Institute for Functional Intelligent Materials, National University of Singapore, Building S9, 4 Science Drive 2, 117544, Singapore
- Chongqing 2D Materials Institute, Chongqing 400714, China
| | - Luis Martin-Moreno
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain
- Departamento de Física Aplicada, Facultad de Ciencias, Universidad de Zaragoza, 50009 Zaragoza, Spain
| | - Valentyn S Volkov
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
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6
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Grudinin DV, Ermolaev GA, Baranov DG, Toksumakov AN, Voronin KV, Slavich AS, Vyshnevyy AA, Mazitov AB, Kruglov IA, Ghazaryan DA, Arsenin AV, Novoselov KS, Volkov VS. Hexagonal boron nitride nanophotonics: a record-breaking material for the ultraviolet and visible spectral ranges. Mater Horiz 2023. [PMID: 37139604 DOI: 10.1039/d3mh00215b] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
A global trend towards miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as surveys for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of the promising materials for future nanophotonics owing to its inherent anisotropy and prospects of high-quality monocrystal growth with an atomically flat surface. Here, we present highly accurate optical constants of hBN in the broad wavelength range of 250-1700 nm combining imaging ellipsometry measurements, scanning near-field optical microscopy and first-principles quantum mechanical computations. hBN's high refractive index, up to 2.75 in the ultraviolet (UV) and visible range, broadband birefringence of ∼0.7, and negligible optical losses make it an outstanding material for UV and visible range photonics. Based on our measurement results, we propose and design novel optical elements: handedness-preserving mirrors and subwavelength waveguides with dimensions of 40 nm operating in the visible and UV ranges, respectively. Remarkably, our results offer a unique opportunity to bridge the size gap between photonics and electronics.
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Affiliation(s)
- D V Grudinin
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park 1, Dubai, United Arab Emirates.
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - G A Ermolaev
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park 1, Dubai, United Arab Emirates.
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - D G Baranov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - A N Toksumakov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - K V Voronin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - A S Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
| | - A A Vyshnevyy
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park 1, Dubai, United Arab Emirates.
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - A B Mazitov
- Institute of Materials, École Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
| | - I A Kruglov
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park 1, Dubai, United Arab Emirates.
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
| | - D A Ghazaryan
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Moscow Center for Advanced Studies, Kulakova str. 20, Moscow, 123592, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - A V Arsenin
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park 1, Dubai, United Arab Emirates.
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia
| | - K S Novoselov
- National Graphene Institute (NGI), University of Manchester, Manchester, M13 9PL, UK
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 03-09 EA, Singapore
- Chongqing 2D Materials Institute, 400714, Chongqing, China
| | - V S Volkov
- Emerging Technologies Research Center, XPANCEO, Dubai Investment Park 1, Dubai, United Arab Emirates.
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7
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Ermolaev GA, Vyslanko IS, Tselin AP, El-Sayed MA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Mironov MS, Mazitov AB, Eghbali A, Panova DA, Romanov RI, Markeev AM, Kruglov IA, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband Optical Properties of Bi 2Se 3. Nanomaterials (Basel) 2023; 13:nano13091460. [PMID: 37177004 PMCID: PMC10180482 DOI: 10.3390/nano13091460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 04/18/2023] [Accepted: 04/21/2023] [Indexed: 05/15/2023]
Abstract
Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290-3300 nm) the refractive index n and the extinction coefficient k of Bi2Se3 are almost independent of synthesis technology, with only a ~10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS2, which has a ~60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi2Se3-based photonic devices.
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Affiliation(s)
- Georgy A Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan S Vyslanko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey P Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel Str., Moscow 143026, Russia
| | - Marwa A El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail S Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Arslan B Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Amir Eghbali
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Daria A Panova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Roman I Romanov
- Department of Solid State Physics and Nanosystems, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe Sh., Moscow 115409, Russia
| | - Andrey M Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan A Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Center of Fundamental and Applied Research, Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya Str., Moscow 127055, Russia
| | - Sergey M Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, 1 Alek Manukyan Str., Yerevan 0025, Armenia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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8
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Yakubovsky DI, Grudinin DV, Ermolaev GA, Vyshnevyy AA, Mironov MS, Novikov SM, Arsenin AV, Volkov VS. Scanning Near-Field Optical Microscopy of Ultrathin Gold Films. Nanomaterials (Basel) 2023; 13:1376. [PMID: 37110961 PMCID: PMC10146867 DOI: 10.3390/nano13081376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 04/13/2023] [Accepted: 04/13/2023] [Indexed: 06/19/2023]
Abstract
Ultrathin metal films are an essential platform for two-dimensional (2D) material compatible and flexible optoelectronics. Characterization of thin and ultrathin film-based devices requires a thorough consideration of the crystalline structure and local optical and electrical properties of the metal-2D material interface since they could be dramatically different from the bulk material. Recently, it was demonstrated that the growth of gold on the chemical vapor deposited monolayer MoS2 leads to a continuous metal film that preserves plasmonic optical response and conductivity even at thicknesses below 10 nm. Here, we examined the optical response and morphology of ultrathin gold films deposited on exfoliated MoS2 crystal flakes on the SiO2/Si substrate via scattering-type scanning near-field optical microscopy (s-SNOM). We demonstrate a direct relationship between the ability of thin film to support guided surface plasmon polaritons (SPP) and the s-SNOM signal intensity with a very high spatial resolution. Using this relationship, we observed the evolution of the structure of gold films grown on SiO2 and MoS2 with an increase in thickness. The continuous morphology and superior ability with respect to supporting SPPs of the ultrathin (≤10 nm) gold on MoS2 is further confirmed with scanning electron microscopy and direct observation of SPP fringes via s-SNOM. Our results establish s-SNOM as a tool for testing plasmonic films and motivate further theoretical research on the impact of the interplay between the guided modes and the local optical properties on the s-SNOM signal.
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Affiliation(s)
- Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
| | - Dmitry V. Grudinin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
| | - Mikhail S. Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
- Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan 0025, Armenia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia; (D.I.Y.); (D.V.G.); (G.A.E.); (A.A.V.); (M.S.M.); (S.M.N.); (A.V.A.)
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9
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El-Sayed MA, Tselin AP, Ermolaev GA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Non-Additive Optical Response in Transition Metal Dichalcogenides Heterostructures. Nanomaterials (Basel) 2022; 12:nano12244436. [PMID: 36558289 PMCID: PMC9787828 DOI: 10.3390/nano12244436] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 12/04/2022] [Accepted: 12/09/2022] [Indexed: 05/27/2023]
Abstract
Van der Waals (vdW) heterostructures pave the way to achieve the desired material properties for a variety of applications. In this way, new scientific and industrial challenges and fundamental questions arise. One of them is whether vdW materials preserve their original optical response when assembled in a heterostructure. Here, we resolve this issue for four exemplary monolayer heterostructures: MoS2/Gr, MoS2/hBN, WS2/Gr, and WS2/hBN. Through joint Raman, ellipsometry, and reflectance spectroscopies, we discovered that heterostructures alter MoS2 and WS2 optical constants. Furthermore, despite the similarity of MoS2 and WS2 monolayers, their behavior in heterostructures is markedly different. While MoS2 has large changes, particularly above 3 eV, WS2 experiences modest changes in optical constants. We also detected a transformation from dark into bright exciton for MoS2/Gr heterostructure. In summary, our findings provide clear evidence that the optical response of heterostructures is not the sum of optical properties of its constituents.
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Affiliation(s)
- Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Andrey P. Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel, Moscow 143026, Russia
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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10
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Ermolaev GA, Yakubovsky DI, El-Sayed MA, Tatmyshevskiy MK, Mazitov AB, Popkova AA, Antropov IM, Bessonov VO, Slavich AS, Tselikov GI, Kruglov IA, Novikov SM, Vyshnevyy AA, Fedyanin AA, Arsenin AV, Volkov VS. Broadband Optical Constants and Nonlinear Properties of SnS 2 and SnSe 2. Nanomaterials (Basel) 2021; 12:nano12010141. [PMID: 35010091 PMCID: PMC8746438 DOI: 10.3390/nano12010141] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 12/24/2021] [Accepted: 12/28/2021] [Indexed: 11/16/2022]
Abstract
SnS2 and SnSe2 have recently been shown to have a wide range of applications in photonic and optoelectronic devices. However, because of incomplete knowledge about their optical characteristics, the use of SnS2 and SnSe2 in optical engineering remains challenging. Here, we addressed this problem by establishing SnS2 and SnSe2 linear and nonlinear optical properties in the broad (300-3300 nm) spectral range. Coupled with the first-principle calculations, our experimental study unveiled the full dielectric tensor of SnS2 and SnSe2. Furthermore, we established that SnS2 is a promising material for visible high refractive index nanophotonics. Meanwhile, SnSe2 demonstrates a stronger nonlinear response compared with SnS2. Our results create a solid ground for current and next-generation SnS2- and SnSe2-based devices.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Arslan B. Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Anna A. Popkova
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Ilya M. Antropov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Vladimir O. Bessonov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Gleb I. Tselikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Ivan A. Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Fedyanin
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Correspondence: or ; Tel.: +7-926-735-93-98
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11
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Ermolaev GA, Voronin KV, Tatmyshevskiy MK, Mazitov AB, Slavich AS, Yakubovsky DI, Tselin AP, Mironov MS, Romanov RI, Markeev AM, Kruglov IA, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband Optical Properties of Atomically Thin PtS 2 and PtSe 2. Nanomaterials (Basel) 2021; 11:3269. [PMID: 34947618 PMCID: PMC8708229 DOI: 10.3390/nano11123269] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 11/21/2021] [Accepted: 11/29/2021] [Indexed: 01/31/2023]
Abstract
Noble transition metal dichalcogenides (TMDCs) such as PtS2 and PtSe2 show significant potential in a wide range of optoelectronic and photonic applications. Noble TMDCs, unlike standard TMDCs such as MoS2 and WS2, operate in the ultrawide spectral range from ultraviolet to mid-infrared wavelengths; however, their properties remain largely unexplored. Here, we measured the broadband (245-3300 nm) optical constants of ultrathin PtS2 and PtSe2 films to eliminate this gap and provide a foundation for optoelectronic device simulation. We discovered their broadband absorption and high refractive index both theoretically and experimentally. Based on first-principle calculations, we also predicted their giant out-of-plane optical anisotropy for monocrystals. As a practical illustration of the obtained optical properties, we demonstrated surface plasmon resonance biosensors with PtS2 or PtSe2 functional layers, which dramatically improves sensor sensitivity by 60 and 30%, respectively.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Kirill V. Voronin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Arslan B. Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey P. Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Mikhail S. Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Roman I. Romanov
- Moscow Engineering Physics Institute, National Research Nuclear University MEPhI, 31 Kashirskoe Sh., 115409 Moscow, Russia;
| | - Andrey M. Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Ivan A. Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
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12
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Tatmyshevskiy MK, Yakubovsky DI, Kapitanova OO, Solovey VR, Vyshnevyy AA, Ermolaev GA, Klishin YA, Mironov MS, Voronov AA, Arsenin AV, Volkov VS, Novikov SM. Hybrid Metal-Dielectric-Metal Sandwiches for SERS Applications. Nanomaterials (Basel) 2021; 11:nano11123205. [PMID: 34947554 PMCID: PMC8708964 DOI: 10.3390/nano11123205] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Revised: 11/20/2021] [Accepted: 11/23/2021] [Indexed: 11/28/2022]
Abstract
The development of efficient plasmonic nanostructures with controlled and reproducible surface-enhanced Raman spectroscopy (SERS) signals is an important task for the evolution of ultrasensitive sensor-related methods. One of the methods to improving the characteristics of nanostructures is the development of hybrid structures that include several types of materials. Here, we experimentally investigate ultrathin gold films (3–9 nm) near the percolation threshold on Si/Au/SiO2 and Si/Au/SiO2/graphene multilayer structures. The occurring field enhanced (FE) effects were characterized by a recording of SERS signal from Crystal Violet dye. In this geometry, the overall FE principally benefits from the combination of two mechanisms. The first one is associated with plasmon excitation in Au clusters located closest to each other. The second is due to the gap plasmons’ excitation in a thin dielectric layer between the mirror and corrugated gold layers. Experimentally obtained SERS signals from sandwiched structures fabricated with Au film of 100 nm as a reflector, dielectric SiO2 spacer of 50 nm and ultrathin gold atop could reach SERS enhancements of up to around seven times relative to gold films near the percolation threshold deposited on a standard glass substrate. The close contiguity of the analyte to graphene and nanostructured Au efficiently quenches the fluorescent background of the model compound. The obtained result shows that the strategy of combining ultrathin nano-island gold films near the percolation threshold with gap plasmon resonances is promising for the design of highly efficient SERS substrates for potential applications in ultrasensitive Raman detection.
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Affiliation(s)
- Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
- Correspondence: (M.K.T.); (S.M.N.); Tel.: +7-9056137678 (M.K.T.); +7-9032360487 (S.M.N.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Olesya O. Kapitanova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
- Department of Chemistry, Lomonosov Moscow State University, 1-3 Leninskiye Gory, 119991 Moscow, Russia
| | - Valentin R. Solovey
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Yuri A. Klishin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Mikhail S. Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Artem A. Voronov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (D.I.Y.); (O.O.K.); (V.R.S.); (A.A.V.); (G.A.E.); (Y.A.K.); (M.S.M.); (A.A.V.); (A.V.A.); (V.S.V.)
- Correspondence: (M.K.T.); (S.M.N.); Tel.: +7-9056137678 (M.K.T.); +7-9032360487 (S.M.N.)
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13
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Ermolaev GA, El-Sayed MA, Yakubovsky DI, Voronin KV, Romanov RI, Tatmyshevskiy MK, Doroshina NV, Nemtsov AB, Voronov AA, Novikov SM, Markeev AM, Tselikov GI, Vyshnevyy AA, Arsenin AV, Volkov VS. Optical Constants and Structural Properties of Epitaxial MoS 2 Monolayers. Nanomaterials (Basel) 2021; 11:nano11061411. [PMID: 34071775 PMCID: PMC8227853 DOI: 10.3390/nano11061411] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 05/23/2021] [Accepted: 05/25/2021] [Indexed: 11/18/2022]
Abstract
Two-dimensional layers of transition-metal dichalcogenides (TMDs) have been widely studied owing to their exciting potential for applications in advanced electronic and optoelectronic devices. Typically, monolayers of TMDs are produced either by mechanical exfoliation or chemical vapor deposition (CVD). While the former produces high-quality flakes with a size limited to a few micrometers, the latter gives large-area layers but with a nonuniform surface resulting from multiple defects and randomly oriented domains. The use of epitaxy growth can produce continuous, crystalline and uniform films with fewer defects. Here, we present a comprehensive study of the optical and structural properties of a single layer of MoS2 synthesized by molecular beam epitaxy (MBE) on a sapphire substrate. For optical characterization, we performed spectroscopic ellipsometry over a broad spectral range (from 250 to 1700 nm) under variable incident angles. The structural quality was assessed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman spectroscopy through which we were able to confirm that our sample contains a single-atomic layer of MoS2 with a low number of defects. Raman and photoluminescence spectroscopies revealed that MBE-synthesized MoS2 layers exhibit a two-times higher quantum yield of photoluminescence along with lower photobleaching compared to CVD-grown MoS2, thus making it an attractive candidate for photonic applications.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Kirill V. Voronin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
- Skolkovo Institute of Science and Technology, 3 Nobel Street, 143026 Moscow, Russia
| | - Roman I. Romanov
- Moscow Engineering Physics Institute, National Research Nuclear University MEPhI, 31 Kashirskoe Sh., 115409 Moscow, Russia;
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Natalia V. Doroshina
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Anton B. Nemtsov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Artem A. Voronov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Andrey M. Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Gleb I. Tselikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (M.A.E.-S.); (D.I.Y.); (K.V.V.); (M.K.T.); (N.V.D.); (A.B.N.); (A.A.V.); (S.M.N.); (A.M.M.); (G.I.T.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
- Correspondence: ; Tel.: +7-926-735-93-98
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14
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Ermolaev GA, Grudinin DV, Stebunov YV, Voronin KV, Kravets VG, Duan J, Mazitov AB, Tselikov GI, Bylinkin A, Yakubovsky DI, Novikov SM, Baranov DG, Nikitin AY, Kruglov IA, Shegai T, Alonso-González P, Grigorenko AN, Arsenin AV, Novoselov KS, Volkov VS. Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics. Nat Commun 2021; 12:854. [PMID: 33558559 PMCID: PMC7870936 DOI: 10.1038/s41467-021-21139-x] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Accepted: 01/03/2021] [Indexed: 01/30/2023] Open
Abstract
Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy has been recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This issue inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Waals interaction. To do this, we made correlative far- and near-field characterizations validated by first-principle calculations that reveal a huge birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this remarkable anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.
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Affiliation(s)
- G A Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- Skolkovo Institute of Science and Technology, Moscow, Russia
| | - D V Grudinin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
| | - Y V Stebunov
- National Graphene Institute (NGI), University of Manchester, Manchester, UK
| | - K V Voronin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- Skolkovo Institute of Science and Technology, Moscow, Russia
| | - V G Kravets
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - J Duan
- Department of Physics, University of Oviedo, Oviedo, Spain
- Center of Research on Nanomaterials and Nanotechnology, CINN (CSIC-Universidad de Oviedo), El Entrego, Spain
| | - A B Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia
| | - G I Tselikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
| | - A Bylinkin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Spain
| | - D I Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
| | - S M Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
| | - D G Baranov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- Department of Physics, Chalmers University of Technology, Göteborg, Sweden
| | - A Y Nikitin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - I A Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia
| | - T Shegai
- Department of Physics, Chalmers University of Technology, Göteborg, Sweden
| | - P Alonso-González
- Department of Physics, University of Oviedo, Oviedo, Spain
- Center of Research on Nanomaterials and Nanotechnology, CINN (CSIC-Universidad de Oviedo), El Entrego, Spain
| | - A N Grigorenko
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
| | - A V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
- GrapheneTek, Skolkovo Innovation Center, Moscow, Russia
| | - K S Novoselov
- National Graphene Institute (NGI), University of Manchester, Manchester, UK
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
- Chongqing 2D Materials Institute, Chongqing, China
| | - V S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia.
- GrapheneTek, Skolkovo Innovation Center, Moscow, Russia.
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15
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Tatarkin DE, Yakubovsky DI, Ermolaev GA, Stebunov YV, Voronov AA, Arsenin AV, Volkov VS, Novikov SM. Surface-Enhanced Raman Spectroscopy on Hybrid Graphene/Gold Substrates near the Percolation Threshold. Nanomaterials (Basel) 2020; 10:E164. [PMID: 31963496 PMCID: PMC7022774 DOI: 10.3390/nano10010164] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/19/2019] [Revised: 01/14/2020] [Accepted: 01/14/2020] [Indexed: 11/21/2022]
Abstract
Graphene is a promising platform for surface-enhanced Raman spectroscopy (SERS)-active substrates, primarily due to the possibility of quenching photoluminescence and fluorescence. Here we study ultrathin gold films near the percolation threshold fabricated by electron-beam deposition on monolayer CVD graphene. The advantages of such hybrid graphene/gold substrates for surface-enhanced Raman spectroscopy are discussed in comparison with conventional substrates without the graphene layer. The percolation threshold is determined by independent measurements of the sheet resistance and effective dielectric constant by spectroscopic ellipsometry. The surface morphology of the ultrathin gold films is analyzed by the use of scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the thicknesses of the films in addition to the quartz-crystal mass-thickness sensor are also measured by AFM. We experimentally demonstrate that the maximum SERS signal is observed near and slightly below the percolation threshold. In this case, the region of maximum enhancement of the SERS signal can be determined using the figure of merit (FOM), which is the ratio of the real and imaginary parts of the effective dielectric permittivity of the films. SERS measurements on hybrid graphene/gold substrates with the dye Crystal Violet show an enhancement factor of ~105 and also demonstrate the ability of graphene to quench photoluminescence by an average of ~60%.
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Affiliation(s)
- Dmitry E. Tatarkin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
- Skolkovo Institute of Science and Technology, 121205 Moscow, Russia
| | - Yury V. Stebunov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Artem A. Voronov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT), 141700 Dolgoprudny, Russia; (D.I.Y.); or (Y.V.S.); (A.A.V.); (A.V.A.); (V.S.V.)
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