Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam

Spatially resolved x-ray fluorescence (XRF) based analysis employing incident beam sizes in the low micrometer range (μXRF) is widely used to study lateral composition changes of various types of microstructured samples. However, up to now the quantitative analysis of such experimental datasets could only be realized employing adequate calibration or reference specimen. In this work, we extent the applicability of the so-called reference-free XRF approach to enable reference-freeμXRF analysis. Here, no calibration specimen are needed in order to derive a quantitative and position sensitive composition of the sample of interest. The necessary instrumental steps to realize reference-freeμXRF are explained and a validation of ref.-freeμXRF against ref.-free standard XRF is performed employing laterally homogeneous samples. Finally, an application example from semiconductor research is shown, where the lateral sample features require the usage of ref.-freeμXRF for quantitative analysis.

Atomistic Insights into Ultrafast SiGe Nanoprocessing

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this but requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework that can simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale superlattice kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology, and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations as well as advanced applications to strained, defected, nanostructured, and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator

We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an absolute minimum of exactly one QD, accurately positioned by lithographic methods relative to the PhCR, and an otherwise flat, a few monolayer thin, Ge wetting layer (WL). With this method, record quality (Q) factors for QD-loaded PhCRs up to Q ∼ 10⁵ are achieved. A comparison with control PhCRs on samples containing a WL but no QDs is presented, as well as a detailed analysis of the dependence of the resonator-coupled emission on temperature, excitation intensity, and emission decay after pulsed excitation. Our findings undoubtedly confirm a single QD in the center of the resonator as a potentially novel photon source in the telecom spectral range.

Effect of Non-Markovian Collisions on Measured Integrated Line Shapes of CO

Using cavity ring-down spectroscopy to probe R-branch transitions of CO in N_{2}, we show that the spectral core of the line shapes associated with the first few rotational quantum numbers, J, can be accurately modeled using a sophisticated line profile, provided that a pressure-dependent line area is introduced. This correction vanishes as J increases and is always negligible in CO-He mixtures. The results are supported by molecular dynamics simulations attributing the effect to non-Markovian behavior of collisions at short times. This work has large implications because corrections must be considered for accurate determinations of integrated line intensities, and for spectroscopic databases and radiative transfer codes used for climate predictions and remote sensing.

Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts

Si_1-x Ge_x is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si_1-x Ge_x junctions that are vital for diverse emerging "More than Moore" and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si_1-x Ge_x heterostructures, obtained from a thermally induced exchange between ultra-thin Si_1-x Ge_x nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of high structural quality can be obtained. Interestingly, ultra-thin interfacial Si layers are formed between the metal and Si_1-x Ge_x segments, explaining the morphologic stability. Integrated into omega-gated Schottky barrier transistors with the channel length being defined by the selective transformation of Si_1-x Ge_x into single-elementary Al leads, a detailed analysis of the transport is conducted. In this respect, a report on a highly versatile platform with Si_1-x Ge_x composition-dependent properties ranging from highly transparent contacts to distinct Schottky barriers is provided. Most notably, the presented abrupt, robust, and reliable metal-Si_1-x Ge_x junctions can open up new device implementations for different types of emerging nanoelectronic, optoelectronic, and quantum devices.

Microstructuring to Improve the Thermal Stability of GeSn Layers

Tin segregation in Ge_1-xSn_x alloys is one of the major problems potentially hindering the use of this material in devices. Ge_1-xSn_x microdisks fabricated from layers with Sn concentrations up to 16.9% underwent here annealing at temperatures as high as 400 °C for 20 min without Sn segregation, in contrast with the full segregation observed in the corresponding blanket layers annealed simultaneously. After annealing, no changes in the elemental composition of the microdisks were evidenced. An enhancement of the total integrated photoluminescence, with no modifications of the emission energy, was also observed. These findings show that microstructuring offers a completely new path in maintaining the stability of high Sn concentration Ge_1-xSn_x layers at temperatures much higher than those used for growth. This approach enables the use of thermal annealing processes to improve the properties of this alloy in optoelectronic devices (such as light emitting diodes, lasers, photodetectors, or modulators). It should also facilitate the integration of Ge_1-xSn_x into well-established technologies requiring medium temperature processes. The same strategy may help to prevent Sn segregation during high temperature processes in similar metastable alloys.

GeSnOI mid-infrared laser technology

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge_0.9Sn_0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

Texture of NiGe(Sn) on Ge(100) and its evolution with Sn content

The texture of the Ni monostanogermanide phase on a Ge(100) substrate was evaluated during a solid-state reaction, with a focus on the impact of Sn addition. Complementary X-ray diffraction analyses involving in situ X-ray diffraction, in-plane reciprocal space maps (RSMs) and pole figures were used to that end. A sequential growth of the phases for the Ni/Ge(Sn) system was found. An Ni-rich phase formed first, followed by the NiGe(Sn) phase. The NiGe and NiGe(Sn) layers were polycrystalline with different out-of-plane orientations. The number of out-of-plane diffraction peaks decreased with the Sn content, while the preferred orientation changed. In-plane RSM analyses confirmed these results. Sn addition modified the out-of-plane and in-plane orientations. Pole figure analysis revealed that numerous epitaxial texture components were present for the Ni/Ge system, while Sn addition reduced the number of epitaxial texture components. On the other hand, segregated Sn crystallized with an epitaxial alignment with the Ge substrate underneath.

Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.

O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

Mid-infrared supercontinuum generation in silicon-germanium all-normal dispersion waveguides

We demonstrate coherent supercontinuum generation spanning over an octave from a silicon germanium-on-silicon waveguide using ∼200fs pulses at a wavelength of 4 µm. The waveguide is engineered to provide low all-normal dispersion in the TM polarization. We validate the coherence of the generated supercontinuum via simulations, with a high degree of coherence across the entire spectrum. Such a generated supercontinuum could lend itself to pulse compression down to 22 fs.

Impact and behavior of Sn during the Ni/GeSn solid-state reaction

Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high-Sn-content photonic devices, which could be detrimental for thermal stability.

GeSn heterostructure micro-disk laser operating at 230 K

We demonstrate lasing up to 230 K in a GeSn heterostructure micro-disk cavity. The GeSn 16.0% optically active layer was grown on a step-graded GeSn buffer, limiting the density of misfit dislocations. The lasing wavelengths shifted from 2720 to 2890 nm at 15 K up to 3200 nm at 230 K. Compared to results reported elsewhere, we attribute the increase in maximal lasing temperature to two factors: a stronger optical confinement by a thicker active layer and a better carrier confinement provided by a GeSn 13.8% / GeSn 16.0% / GeSn 13.8% double heterostructure.

Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase

The Ni/Ge0.9Sn0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge0.9Sn0.1) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the ɛ-Ni5(Ge0.9Sn0.1)3 metastable phase with a hexagonal structure.

SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C-700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

Effect of humidity on the absorption continua of CO2 and N2 near 4 μm: Calculations, comparisons with measurements, and consequences for atmospheric spectra

We present a theoretical study of the effects of collisions with water vapor molecules on the absorption, around 4 μm, in both the high frequency wing of the CO₂ ν₃ band and the collision-induced fundamental band of N₂. Calculations are made for the very first time, showing that predictions based on classical molecular dynamics simulations enable, without adjustment of any parameter, very satisfactory agreement with the few available experimental determinations. This opens the route for a future study in which accurate temperature-dependent (semi-empirical) models will be built and checked through comparisons between computed and measured atmospheric spectra. This is of interest since, as demonstrated by simulations, neglecting the humidity of air can lead to significant modifications of the atmospheric transmission (and thus also emission) between 2000 and 2800 cm^-1.

Rotated echoes of molecular alignment: fractional, high order and imaginary

We report experimental observations of rotated echoes of alignment induced by a pair of time-delayed and polarization-skewed femtosecond laser pulses interacting with an ensemble of molecular rotors. Rotated fractional echoes, rotated high order echoes and rotated imaginary echoes are directly visualized by using the technique of coincident Coulomb explosion imaging. We show that the echo phenomenon not only exhibits temporal recurrences but also spatial rotations determined by the polarization of the time-delayed second pulse. The dynamics of echo formation is well described by the laser-induced filamentation in rotational phase space. The quantum-mechanical simulation shows good agreements with the experimental results.

Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction

Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing, communications, or optical interconnects. In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions. This photodiode configuration takes advantage of the compatibility with contact process steps of silicon modulators, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics, viable for high-speed and efficient operation near 1.55 μm wavelengths. More specifically, we experimentally obtained at a reverse voltage of 1V a dark current lower than 10 nA, a responsivity higher than 1.1 A/W, and a 3 dB opto-electrical cut-off frequency over 50 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy cost-effective photonic transceivers on silicon-on-insulator substrates.

Super- and sub-Lorentzian effects in the Ar-broadened line wings of HCl gas

Using previously recorded spectra of HCl diluted in Ar gas at room temperature for several pressure conditions, we show that the absorptions in between successive P and R transitions are significantly different from those predicted using purely Lorentzian line shapes. Direct theoretical predictions of the spectra are also made using requantized classical molecular dynamics simulations and an input HCl-Ar interaction potential. They provide the time evolution of the dipole auto-correlation function (DAF) whose Fourier-Laplace transform yields the absorption spectrum. These calculations very well reproduce the observed super-Lorentzian behavior in the troughs between the intense lines in the central part of the band and the tendency of absorption to become sub-Lorentzian in the band wings between high J lines. The analysis shows that the former behavior is essentially due to incomplete collisions which govern the DAF at very short times. In addition, the increasing influence of line-mixing when going away from the band center explains the tendency of absorption to become more and more sub-Lorentzian in the wings.

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

SiGeSn ternaries are grown on Ge-buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap engineering in the short-wave infrared range of up to about 2.6 µm. Temperature-dependent photoluminescence experiments indicate ternaries near the indirect-to-direct bandgap transition, proving their potential for ternary-based light emitters in the aforementioned optical range. The ternaries' layer relaxation is also monitored to explore their use as strain-relaxed buffers, since they are of interest not only for light emitting diodes investigated in this paper but also for many other optoelectronic and electronic applications. In particular, the authors have epitaxially grown a GeSn/SiGeSn multiquantum well heterostructure, which employs SiGeSn as barrier material to efficiently confine carriers in GeSn wells. Strong room temperature light emission from fabricated light emitting diodes proves the high potential of this heterostructure approach.

Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks

The bandgap tunability of (Si)GeSn group IV semiconductors opens a new era in Si-technology. Depending on the Si/Sn contents, direct and indirect bandgaps in the range of 0.4-0.8 eV can be obtained, offering a broad spectrum of both photonic and low power electronic applications. In this work, we systematically studied capacitance-voltage characteristics of high-k/metal gate stacks formed on GeSn and SiGeSn alloys with Sn-contents ranging from 0 to 14 at. % and Si-contents from 0 to 10 at. % particularly focusing on the minority carrier inversion response. A clear correlation between the Sn-induced shrinkage of the bandgap energy and enhanced minority carrier response was confirmed using temperature and frequency dependent capacitance voltage-measurements, in good agreement with k.p theory predictions and photoluminescence measurements of the analyzed epilayers as reported earlier. The enhanced minority generation rate for higher Sn-contents can be firmly linked to the bandgap reduction in the GeSn epilayer without significant influence of substrate/interface effects. It thus offers a unique possibility to analyze intrinsic defects in (Si)GeSn epilayers. The extracted dominant defect level for minority carrier inversion lies approximately 0.4 eV above the valence band edge in the studied Sn-content range (0-12.5 at. %). This finding is of critical importance since it shows that the presence of Sn by itself does not impair the minority carrier lifetime. Therefore, the continuous improvement of (Si)GeSn material quality should yield longer nonradiative recombination times which are required for the fabrication of efficient light detectors and to obtain room temperature lasing action.

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micrometre scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. The measurements were performed in a series of micro-devices under either uniaxial or biaxial stress and an excellent agreement with numerical simulations was found. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.

Study of GeSn based heterostructures: towards optimized group IV MQW LEDs

We present results on CVD growth and electro-optical characterization of Ge(0.92)Sn(0.08)/Ge p-i-n heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn active layers in different LED geometries, such as double heterostructures and multi quantum wells is discussed based on electroluminescence data. Theoretical calculations by effective mass and 6 band k∙p method reveal low barrier heights for this specific structure. Best configurations offer only a maximum barrier height for electrons of about 40 meV at the Γ point at room temperature (e.g. 300 K), evidently insufficient for proper light emitting devices. An alternative solution using SiGeSn as barrier material is introduced, which provides appropriate band alignment for both electrons and holes resulting in efficient confinement in direct bandgap GeSn wells. Finally, epitaxial growth of such a complete SiGeSn/GeSn/SiGeSn double heterostructure including doping is shown.

Mid-infrared nonlinear optical response of Si-Ge waveguides with ultra-short optical pulses

We characterize the nonlinear optical response of low loss Si(0.6)Ge(0.4) / Si waveguides in the mid-infrared between 3.3 μm and 4 μm using femtosecond optical pulses. We estimate the three and four-photon absorption coefficients as well as the Kerr nonlinear refractive index from the experimental measurements. The effect of multiphoton absorption on the optical nonlinear Kerr response is evaluated and the nonlinear figure of merit estimated providing some guidelines for designing nonlinear optical devices in the mid-IR. Finally, we compare the impact of free-carrier absorption at mid-infrared wavelengths versus near-infrared wavelengths for these ultra-short pulses.

Design, fabrication and characterization of an AWG at 4.5 µm

In this paper, we present the design, the fabrication and the characterization of an Arrayed Waveguide Grating (AWG) based on a SiGe graded index waveguide platform, operating at 4.5 µm. These devices were specifically designed to work together with an array of Distributed Feedback Bragg Quantum Cascade Lasers (DFB-QCL) emitting at different wavelengths. The AWG enables to combine the different light sources into a single output and the design adopted allows to maximize transmission over the entire spectral range defined by the array of DFB-QCLs.

Collisional dynamics in a gas of molecular super-rotors

Recently, femtosecond laser techniques have been developed that are capable of bringing gas molecules to extremely fast rotation in a very short time, while keeping their translational motion relatively slow. Here we study collisional equilibration dynamics of this new state of molecular gases. We show that the route to equilibrium starts with a metastable 'gyroscopic stage' in the course of which the molecules maintain their fast rotation and orientation of the angular momentum through many collisions. The inhibited rotational-translational relaxation is characterized by a persistent anisotropy in the molecular angular distribution, and is manifested in the optical birefringence and anisotropic diffusion in the gas. After a certain induction time, the 'gyroscopic stage' is abruptly terminated by an explosive rotational-translational energy exchange, leading the gas towards the final equilibrium. We illustrate our conclusions by direct molecular dynamics simulation of several gases of linear molecules.

Quantitative analysis of Si/SiGeC superlattices using atom probe tomography

SiGe and its alloys are used as key materials in innovative electronic devices. The analysis of these materials together with the localisation of dopants and impurities on a very fine scale is of crucial importance for better understanding their electronic properties. The quantification of carbon and germanium in an as-grown Si/SiGeC superlattice has been investigated using Atom Probe Tomography as a function of analysis conditions and sample anneal temperature. The mass spectrum is heavily influenced by the analysis conditions and chemical identification is needed. It was found that quantitative results are obtained using a intermediate electric field. The evaporation of carbon ions shows a strong spatial and temporal correlation. A series of annealed samples have been analysed, presenting an inhomogeneous carbon distribution, appearing in the shape of small clusters. These findings confirm previous results and give a better understanding of the processes occurring in these technologically important materials.

High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.

Recommended isolated-line profile for representing high-resolution spectroscopic transitions (IUPAC Technical Report)

The report of an IUPAC Task Group, formed in 2011 on “Intensities and line shapes in high-resolution spectra of water isotopologues from experiment and theory” (Project No. 2011-022-2-100), on line profiles of isolated high-resolution rotational-vibrational transitions perturbed by neutral gas-phase molecules is presented. The well-documented inadequacies of the Voigt profile (VP), used almost universally by databases and radiative-transfer codes, to represent pressure effects and Doppler broadening in isolated vibrational-rotational and pure rotational transitions of the water molecule have resulted in the development of a variety of alternative line-profile models. These models capture more of the physics of the influence of pressure on line shapes but, in general, at the price of greater complexity. The Task Group recommends that the partially Correlated quadratic-Speed-Dependent Hard-Collision profile (pCqSD-HCP) should be adopted as the appropriate model for high-resolution spectroscopy. For simplicity this should be called the Hartmann–Tran profile (HTP). The HTP is sophisticated enough to capture the various collisional contributions to the isolated line shape, can be computed in a straightforward and rapid manner, and reduces to simpler profiles, including the Voigt profile, under certain simplifying assumptions.

Variable-length cell for studies of gas spectra with extremely short optical paths

We present a cell for studies of light transmission through very strongly absorbing gases. It uses a fixed window and a mirror, parallel to the latter and attached to a micrometric linear motion feedthrough monitoring mirror-window distances from 0 to a couple of centimeters. This device is tested by recording CO2 gas spectra near 4.3 μm using a Fourier transform spectrometer. Their analysis shows that optical-path lengths between 20 and 2000 μm have been obtained. This now enables spectroscopic measurements of self-broadening coefficients of O16C12O16 lines in the ν3 band, for instance, and opens perspectives for optical soundings of thin films of porous materials.

Ab initio calculations for the far infrared collision induced absorption by N2 gas

We present (far-infrared) Collision Induced Absorption (CIA) spectra calculations for pure gaseous N2 made for the first time, from first-principles. They were carried out using classical molecular dynamics simulations based on ab initio predictions of both the intermolecular potential and the induced-dipole moment. These calculations reproduce satisfactory well the experimental values (intensity and band profile) with agreement within 3% at 149 K. With respect to results obtained with only the long range (asymptotic) dipole moment (DM), including the short range overlap contribution improves the band intensity and profile at 149 K, but it deteriorates them at 296 K. The results show that the relative contribution of the short range DM to the band intensity is typically around 10%. We have also examined the sensitivity of the calculated CIA to the intermolecular potential anisotropy, providing a test of the so-called isotropic approximation used up to now in all N2 CIA calculations. As all these effects interfere simultaneously with quantitatively similar influences (around 10%), it is rather difficult to assert which one could explain remaining deviations with the experimental results. Furthermore, the rather large uncertainties and sometimes inconsistencies of the available measurements forbid any definitive conclusion, stressing the need for new experiments.

Low loss SiGe graded index waveguides for mid-IR applications

In the last few years Mid InfraRed (MIR) photonics has received renewed interest for a variety of commercial, scientific and military applications. This paper reports the design, the fabrication and the characterization of SiGe/Si based graded index waveguides and photonics integrated devices. The thickness and the Ge concentration of the core layer were optimized to cover the full [3 - 8 µm] band. The developed SiGe/Si stack has been used to fabricate straight waveguides and basic optical functions such as Y-junction, crossings and couplers. Straight waveguides showed losses as low as 1 dB/cm at λ = 4.5 µm and 2 dB/cm at 7.4 µm. Likewise straight waveguides, basic functions exhibit nearly theoretical behavior with losses compatible with the implementation of more complex functions in integrated photonics circuits. To the best of our knowledge, the performances of those Mid-IR waveguides significantly exceed the state of the art, confirming the feasibility of using graded SiGe/Si devices in a wide range of wavelengths. These results represent a capital breakthrough to develop a photonic platform working in the Mid-IR range.

Mlines characterization of the refractive index profile of SiGe gradient waveguides at 2.15 µm

SiGe alloys present a large Infra-Red transparency window and a full compatibility with the standard Complementary Metal Oxide Semiconductor processing making them suitable for applications in integrated optics. In this paper we report on Mlines characterization of Si(1-x)Ge(x) graded index waveguides at 2.15 µm. First, a law giving the refractive index of a Si(1-x)Ge(x) alloy as a function of the Ge content x: n = 1.342x(2) + 0.295x + 3.451, has been experimentally established in the 0 < x < 0.4 range. Then, we have demonstrated that our methodology based on Mlines measurements can be used as short-loop non-destructive technique to provide feedback for sample growth.

Low-loss germanium strip waveguides on silicon for the mid-infrared

Mid-infrared photonics in silicon needs low-loss integrated waveguides. While monocrystalline germanium waveguides on silicon have been proposed, experimental realization has not been reported. Here we demonstrate a germanium strip waveguide on a silicon substrate. It is designed for single mode transmission of light in transverse magnetic (TM) polarization generated from quantum cascade lasers at a wavelength of 5.8 μm. The propagation losses were measured with the Fabry-Perot resonance method. The lowest achieved propagation loss is 2.5 dB/cm, while the bending loss is measured to be 0.12 dB for a 90° bend with a radius of 115 μm.

Pressure effects on water vapour lines: beyond the Voigt profile

A short overview of recent results on the effects of pressure (collisions) regarding the shape of isolated infrared lines of water vapour is presented. The first part of this study considers the basic collisional quantities, which are the pressure-broadening and -shifting coefficients, central parameters of the Lorentzian (and Voigt) profile and thus of any sophisticated line-shape model. Through comparisons of measured values with semi-classical calculations, the influences of the molecular states (both rotational and vibrational) involved and of the temperature are analysed. This shows the relatively unusual behaviour of H(2)O broadening, with evidence of a significant vibrational dependence and the fact that the broadening coefficient (in cm(-1) atm(-1)) of some lines increases with temperature. In the second part of this study, line shapes beyond the Voigt model are considered, thus now taking 'velocity effects' into account. These include both the influence of collisionally induced velocity changes that lead to the so-called Dicke narrowing and the influence of the dependence of collisional parameters on the speed of the radiating molecule. Experimental evidence of deviations from the Voigt shape is presented and analysed. The interest of classical molecular dynamics simulations, to model velocity changes, together with semi-classical calculations of the speed-dependent collisional parameters for line-shape predictions from 'first principles', are discussed.

Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology

First results on formation of thin film GeOI structures by the Smart Cut™ technology are presented in this paper. Thin single crystal layers of Ge have been successfully transferred, via oxide bonding layer, onto standard Si substrates with diameters ranging from 100 to 200 mm. Compared to SOI manufacturing, the development of GeOI requires adaptation to the available germanium material, since the starting material can be either bulk Ge or an epitaxial layer. Some results will be presented for GeOI formation according to the different technological options. Germanium splitting kinetics will be discussed and compared to already published results. To show good quality of the GeOI structures, detailed characterization has been done by TEM cross sections for defect densities, interfaces abruptness and layers homogeneities evaluation. AFM was used for surface roughness measurements. These results help define procedures that are required to achieve large diameter high quality GeOI structures.

Quantitative profiling of SiGe/Si superlattices by time-of-flight secondary ion mass spectrometry: the advantages of the extended Full Spectrum protocol

The abundance of work on SiGe-based devices demonstrates the importance of the compositional characterization of such materials. However, Secondary Ion Mass Spectrometry (SIMS) characterization of SiGe layers often suffers from matrix effects due to the non-linear variation of ionization yields with Ge content. Several solutions have been proposed in order to overcome this problem, each having its own limitations such as a restricted germanium concentration range, or a weak sensitivity to dopants or impurities. Here, we studied the improvements brought by an alternative protocol: the extended Full Spectrum protocol, which states proportionality between the composition of the secondary ion beam and that of the actual material. Previous studies on this protocol showed that it was extremely precise and reproducible for Ge quantification in a permanent regime, because of minimized matrix effects. In this study we thus investigated its accuracy for the simultaneous quantitative depth profiling of both matrix elements (Si, Ge) and impurities (B, C or P) in strained SiGe/Si superlattices by comparing results with those from more classic protocols. The profiles provided by the extended Full Spectrum protocol were found to be accurate, and to exhibit better properties than classic protocols in terms of signal/noise ratio and signal stability, along with a slight enhancement in depth resolution.

An intercomparison of measured pressure-broadening and pressure-shifting parameters of water vapor

The present work is an intercomparison of experimental results on the pressure broadening and pressure shifting of water vapor absorption lines. The work focuses on application to the Earth's atmosphere; hence measurements of nitrogen, oxygen, air, and H2O as the buffer, or perturbing gas, were considered. The literature was searched and over 100 papers found. The data, measured half-widths, their temperature dependence, and the line shifts, were taken and databases created for each perturbing gas. The databases were reordered, grouping data for rovibrational transitions, and intercomparisons of the measurements made. Trends in the data, relationships between the data sets, and dependences on temperature and quantum numbers were investigated. The data were averaged and an estimated uncertainty determined. The averaged data sets are evaluated with respect to the need of the spectroscopic and remote sensing communities. Based on these studies, recommendations for new measurements are made.Key words: water vapor, half-widths, line shifts, temperature dependence of half-width.

Experimental and theoretical study of line mixing in NH3 spectra. II. Effect of the perturber in infrared parallel bands

In a previous paper [J. Chem. Phys. 116, 7544 (2002) (Paper I)] a model, based on the energy corrected sudden approximation, was proposed for the construction of the line-mixing relaxation matrix. It was successfully tested by comparisons with measured infrared spectra of ammonia-helium mixtures. The present paper extends this preliminary study by considering mixtures of NH3 with H2 and Ar. Measurements have been made at room temperature in the regions of the nu2 and nu1 bands for pressures up to several hundred atmospheres. As in Paper I, the relaxation operator is constructed, within the impact approximation, using the ECS approximation. The data required are dynamical factors (which can be predicted from the NH3-X potential energy surface) and a scaling length (adjusted using line broadening data). Comparisons between measured and calculated absorptions demonstrate the quality of the model which satisfactory corrects for the large deviations with respect to the purely Lorentzian behavior. Line-mixing effects for NH3-Ar and NH3-H2 are qualitatively similar to those observed for NH3-He but quantitative differences exist, particularly when intra- and interbranch couplings are considered. Finally, the proposed model leads to very satisfactory results in the wings of both the purely rotational and nu2 bands of NH3 diluted in H2, opening promising perspectives for the remote sensing study of planetary atmospheres.

Spectral Lineshape Parameters Revisited for HF in a Bath of Argon

Previous measurements of asymmetries of the profiles of argon-broadened HF lines at moderate perturber densities (pressures higher than 10 atm) have been confirmed and extended by high-resolution Fourier transform spectroscopy. In some cases, the asymmetries observed here are of opposite sign when compared to the results obtained at much lower densities (pressures lower than 1 atm). By comparing all the available experiments, the competition between the various mechanisms leading to asymmetries has been analyzed as function of the perturber pressure and the vibrational transitions considered. Copyright 1999 Academic Press.

Spectral Lineshape Parameters Revisited for HF in a Bath of Argon

The test of an interaction potential for HF-argon recently determined from the spectroscopy of the Van der Waals complex requires accurate experimental widths and shifts cross sections. Since inconsistencies existed between previous measurements, collisional lineshapes were studied at T = 296 K by high-resolution Fourier transform spectroscopy for the 0-0, 0-1, and 0-2 bands. The accurate close-coupling molecular scattering calculations of Green and Hutson (1994. J. Chem. Phys. 100, 891) were extended to a complementary set of kinetic energies in order to check the thermal averaging procedure. Agreement between measured and computed room temperature cross sections is excellent for the three vibrational bands. This confirms the accuracy of the HF-argon surface and particularly its dependence on the HF vibrational level, which is sensitively probed both by the widths and by the shifts cross sections at high j(i) values. Copyright 1999 Academic Press.

The effect of sampling error and measurement error and its correlation on the estimation of multi-locus fixed-bin VNTR RFLP genotype probabilities

Bootstrapping was used to examine the effect of sampling error and measurement error and its correlation on fixed-bin genotype probabilities. Bootstrap confidence intervals (Cls) were made relative to the point estimate using the log of the inverse of the probabilities. From databases of 200-250 genotypes, sampling error alone yielded median relative 95% CIs of from one order of magnitude out of five for one locus to one out of ten for four loci. Measurement error of the test genotype fragments increased the latter to about one order of magnitude out of eight. Database measurement error and its correlation had only a slight effect on multi-locus probability uncertainty. Together, these uncertainties are several orders of magnitude greater than error due to population substructuring of a race by its major component ethnic groups.

The effect of ethnic and racial population substructuring on the estimation of multi-locus fixed-bin VNTR RFLP genotype probabilities

Four East Asian ethnic and four racial VNTR RFLP Southern California databases were used to determine the impact of population substructure on fixed-bin genotype probability estimates. Two calculations were used for population-level probabilities: Stratified sampling, which takes substructuring into account, and pooling, which ignores it. Using 1000 four-locus genotypes, the relative difference between probabilities calculated with the stratified and the pooled methods did not exceed one order of magnitude out of about 11 orders of magnitude for East-Asian racial genotypes. Pooled estimates differed from cognate ethnic values by less than one order of magnitude out of about six. These findings suggest substructuring of races by major ethnic groups does not lead to large errors. Racial genotype probability variances were on average about twice the ethnic variances. Multi-racial total population probabilities calculated by the pooled and stratified methods differed by less than one order of magnitude out of five.