Interfacial charge transfer and persistent metallicity of ultrathin SrIrO3/SrRuO3 heterostructures

Interface quantum materials have yielded a plethora of previously unknown phenomena, including unconventional superconductivity, topological phases, and possible Majorana fermions. Typically, such states are detected at the interface between two insulating constituents by electrical transport, but whether either material is conducting, transport techniques become insensitive to interfacial properties. To overcome these limitations, we use angle-resolved photoemission spectroscopy and molecular beam epitaxy to reveal the electronic structure, charge transfer, doping profile, and carrier effective masses in a layer-by-layer fashion for the interface between the Dirac nodal-line semimetal SrIrO₃ and the correlated metallic Weyl ferromagnet SrRuO₃. We find that electrons are transferred from the SrIrO₃ to SrRuO₃, with an estimated screening length of λ = 3.2 ± 0.1 Å. In addition, we find that metallicity is preserved even down to a single SrIrO₃ layer, where the dimensionality-driven metal-insulator transition typically observed in SrIrO₃ is avoided because of strong hybridization of the Ir and Ru t_2g states.

Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO_{3}

The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO_{3}, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO_{3} substrate might contribute to the enhanced superconducting pairing temperature. Alternatively, it has also been recently proposed that such replica bands might instead originate from extrinsic final state losses associated with the photoemission process. Here, we perform a quantitative examination of replica bands in monolayer FeSe/SrTiO_{3}, where we are able to conclusively demonstrate that the replica bands are indeed signatures of intrinsic electron-boson coupling, and not associated with final state effects. A detailed analysis of the energy splittings and relative peak intensities between the higher-order replicas, as well as other self-energy effects, allows us to determine that the interfacial electron-phonon coupling in the system corresponds to a value of λ=0.19±0.02, providing valuable insights into the enhancement of superconductivity in monolayer FeSe/SrTiO_{3}. The methodology employed here can also serve as a new and general approach for making more rigorous and quantitative comparisons to theoretical calculations of electron-phonon interactions and coupling constants.

Strain-stabilized superconductivity

Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO₂ thin films on (110)-oriented TiO₂ substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.

Amorphization mechanism of SrIrO3 electrocatalyst: How oxygen redox initiates ionic diffusion and structural reorganization

The use of renewable electricity to prepare materials and fuels from abundant molecules offers a tantalizing opportunity to address concerns over energy and materials sustainability. The oxygen evolution reaction (OER) is integral to nearly all material and fuel electrosyntheses. However, very little is known about the structural evolution of the OER electrocatalyst, especially the amorphous layer that forms from the crystalline structure. Here, we investigate the interfacial transformation of the SrIrO3 OER electrocatalyst. The SrIrO3 amorphization is initiated by the lattice oxygen redox, a step that allows Sr2+ to diffuse and O2- to reorganize the SrIrO3 structure. This activation turns SrIrO3 into a highly disordered Ir octahedral network with Ir square-planar motif. The final Sr y IrO x exhibits a greater degree of disorder than IrO x made from other processing methods. Our results demonstrate that the structural reorganization facilitated by coupled ionic diffusions is essential to the disordered structure of the SrIrO3 electrocatalyst.

Effects of Anisotropic Strain on Spin-Orbit Torque Produced by the Dirac Nodal Line Semimetal IrO2

We report spin-torque ferromagnetic resonance studies of the efficiency of the damping-like (ξ_DL) spin-orbit torque exerted on an adjacent ferromagnet film by current flowing in epitaxial (001) and (110) IrO₂ thin films. IrO₂ possesses Dirac nodal lines (DNLs) in the band structure that are gapped by spin-orbit coupling, which could enable a very high spin Hall conductivity, σ_SH. We find that the (001) films do exhibit exceptionally high ξ_DL ranging from 0.45 at 293 K to 0.65 at 30 K, which sets the lower bounds of σ_SH to be 1.9 × 10⁵ and 3.75 × 10⁵ Ω^-1 m^-1, respectively, 10 times higher and of opposite sign than the theoretical prediction. Furthermore, ξ_DL and σ_SH are substantially reduced in anisotropically strained (110) films. We suggest that this high sensitivity to anisotropic strain is because of changes in contributions to σ_SH near the DNLs.

Mott gap collapse in lightly hole-doped Sr2-xKxIrO4

The evolution of Sr₂IrO₄ upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr₂IrO₄ upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr_2-xK_xIrO₄ utilizing a combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved photoemission spectroscopy. Upon hole doping, we observe the formation of a coherent, two-band Fermi surface, consisting of both hole pockets centred at (π, 0) and electron pockets centred at (π/2, π/2). In particular, the strong similarities between the Fermi surface topology and quasiparticle band structure of hole- and electron-doped Sr₂IrO₄ are striking given the different internal structure of doped electrons versus holes.

Engineering Carrier Effective Masses in Ultrathin Quantum Wells of IrO_{2}

The carrier effective mass plays a crucial role in modern electronic, optical, and catalytic devices and is fundamentally related to key properties of solids such as the mobility and density of states. Here we demonstrate a method to deterministically engineer the effective mass using spatial confinement in metallic quantum wells of the transition metal oxide IrO_{2}. Using a combination of in situ angle-resolved photoemission spectroscopy measurements in conjunction with precise synthesis by oxide molecular-beam epitaxy, we show that the low-energy electronic subbands in ultrathin films of rutile IrO_{2} have their effective masses enhanced by up to a factor of 6 with respect to the bulk. The origin of this strikingly large mass enhancement is the confinement-induced quantization of the highly nonparabolic, three-dimensional electronic structure of IrO_{2} in the ultrathin limit. This mechanism lies in contrast to that observed in other transition metal oxides, in which mass enhancement tends to result from complex electron-electron interactions and is difficult to control. Our results demonstrate a general route towards the deterministic enhancement and engineering of carrier effective masses in spatially confined systems, based on an understanding of the three-dimensional bulk electronic structure.

A controlled trial of desipramine in 18 men with posttraumatic stress disorder

Eighteen male U.S. veterans meeting DSM-III criteria for posttraumatic stress disorder (PTSD) completed a 4-week double-blind, crossover study comparing administration of 200 mg/day of desipramine with placebo. Response was measured by using the Beck Depression Inventory, the Hamilton Rating Scale for Depression, the Hamilton Rating Scale for Anxiety, and the Impact of Event Scale. Overall, the only apparent response to desipramine was in some symptoms of depression; there were no changes in anxiety and other PTSD symptoms.

Biological markers of affective disorders and posttraumatic stress disorder: a pilot study with desipramine

Three biological markers of affective disorders and response to desipramine were used to study the relationship of posttraumatic stress disorder (PTSD) to affective illness. Blunted TRH response and decreased REM latency in eight patients with PTSD occurred at frequencies similar to those that have been found in patients with major affective disorder. Pretreatment Hamilton Rating Scale for Depression and Beck Depression Inventory scale scores were elevated; scores after 4 weeks' treatment with desipramine revealed significant (p less than .05 and p less than .005, respectively) improvement. These findings support a link between PTSD and affective illness.