Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V2O3

In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V₂O₃, the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Many correlated systems feature an insulator-to-metal transition that can be triggered by an electric field. Although it is known that metallization takes place through filament formation, the details of how this process initiates and evolves remain elusive. We use in-operando optical reflectivity to capture the growth dynamics of the metallic phase with space and time resolution. We demonstrate that filament formation is triggered by nucleation at hotspots, with a subsequent expansion over several decades in time. By comparing three case studies (VO₂, V₃O₅, and V₂O₃), we identify the resistivity change across the transition as the crucial parameter governing this process. Our results provide a spatiotemporal characterization of volatile resistive switching in Mott insulators, which is important for emerging technologies, such as optoelectronics and neuromorphic computing.

A Functional Spiking Neural Network of Ultra Compact Neurons

We demonstrate that recently introduced ultra-compact neurons (UCN) with a minimal number of components can be interconnected to implement a functional spiking neural network. For concreteness we focus on the Jeffress model, which is a classic neuro-computational model proposed in the 40’s to explain the sound directionality detection by animals and humans. In addition, we introduce a long-axon neuron, whose architecture is inspired by the Hodgkin-Huxley axon delay-line and where the UCNs implement the nodes of Ranvier. We then interconnect two of those neurons to an output layer of UCNs, which detect coincidences between spikes propagating down the long-axons. This functional spiking neural neuron circuit with biological relevance is built from identical UCN blocks, which are simple enough to be made with off-the-shelf electronic components. Our work realizes a new, accessible and affordable physical model platform, where neuroscientists can construct arbitrary mid-size spiking neuronal networks in a lego-block like fashion that work in continuous time. This should enable them to address in a novel experimental manner fundamental questions about the nature of the neural code and to test predictions from mathematical models and algorithms of basic neurobiology research. The present work aims at opening a new experimental field of basic research in Spiking Neural Networks to a potentially large community, which is at the crossroads of neurobiology, dynamical systems, theoretical neuroscience, condensed matter physics, neuromorphic engineering, artificial intelligence, and complex systems.

Disordered Mott-Hubbard Physics in Nanoparticle Solids: Transitions Driven by Disorder, Interactions, and Their Interplay

We show that adapting the knowledge developed for the disordered Mott-Hubbard model to nanoparticle (NP) solids can deliver many very helpful new insights. We developed a hierarchical nanoparticle transport simulator (HINTS), which builds from localized states to describe the disorder-localized and Mott-localized phases of NP solids and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multiorbital Hubbard model at and away from integer filling by dynamical mean field theory. This DMFT approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios produced by the two methods are strikingly similar and account for the mobilities measured in NP solids. We conclude this work by constructing the comprehensive phase diagram of PbSe NP solids on the disorder-filling plane.

Biologically Relevant Dynamical Behaviors Realized in an Ultra-Compact Neuron Model

We demonstrate a variety of biologically relevant dynamical behaviors building on a recently introduced ultra-compact neuron (UCN) model. We provide the detailed circuits which all share a common basic block that realizes the leaky-integrate-and-fire (LIF) spiking behavior. All circuits have a small number of active components and the basic block has only three, two transistors and a silicon controlled rectifier (SCR). We also demonstrate that numerical simulations can faithfully represent the variety of spiking behavior and can be used for further exploration of dynamical behaviors. Taking Izhikevich’s set of biologically relevant behaviors as a reference, our work demonstrates that a circuit of a LIF neuron model can be used as a basis to implement a large variety of relevant spiking patterns. These behaviors may be useful to construct neural networks that can capture complex brain dynamics or may also be useful for artificial intelligence applications. Our UCN model can therefore be considered the electronic circuit counterpart of Izhikevich’s (2003) mathematical neuron model, sharing its two seemingly contradicting features, extreme simplicity and rich dynamical behavior.

An ultra-compact leaky-integrate-and-fire model for building spiking neural networks

We introduce an ultra-compact electronic circuit that realizes the leaky-integrate-and-fire model of artificial neurons. Our circuit has only three active devices, two transistors and a silicon controlled rectifier (SCR). We demonstrate the implementation of biologically realistic features, such as spike-frequency adaptation, a refractory period and voltage modulation of spiking rate. All characteristic times can be controlled by the resistive parameters of the circuit. We built the circuit with out-of-the-shelf components and demonstrate that our ultra-compact neuron is a modular block that can be associated to build multi-layer deep neural networks. We also argue that our circuit has low power requirements, as it is normally off except during spike generation. Finally, we discuss the ultimate ultra-compact limit, which may be achieved by further replacing the SCR circuit with Mott materials.

Direct Evidence of Lithium Ion Migration in Resistive Switching of Lithium Cobalt Oxide Nanobatteries

Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two-terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration toward the outside of the Li_x CoO₂ layer. These observations are very well correlated with the observed insulator-to-metal transition of the oxide. Besides, smaller device area experimentally yields much faster switching kinetics, which is qualitatively well accounted for by a simple numerical simulation. Write/erase endurance is also highly improved with downscaling - much further than the present cycling life of usual lithium-ion batteries. Hence very attractive possibilities can be envisaged for this class of materials in nanoelectronics.

Magnetism, Spin Texture, and In-Gap States: Atomic Specialization at the Surface of Oxygen-Deficient SrTiO_{3}

Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements of the two-dimensional electronic states confined near the (001) surface of oxygen-deficient SrTiO_{3}, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding with a splitting of a few meV and when surface magnetism on the Ti ions is included, bands become spin-split with an energy difference ∼100  meV at the Γ point, consistent with SARPES findings. While magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. Furthermore, we observe an atomic specialization phenomenon, namely, two types of electronic contributions: one is from Ti atoms neighboring the oxygen vacancies that acquire rather large magnetic moments and mostly create in-gap states; another comes from the partly polarized t_{2g} itinerant electrons of Ti atoms lying further away from the oxygen vacancy, which form the two-dimensional electron system and are responsible for the Rashba spin winding and the spin splitting at the Fermi surface.

Manganite-based memristive heterojunction with tunable non-linear I-V characteristics

A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr(1-x)Ca(x)MnO3 (PCMO) and CaMnO(3-δ) (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO.

First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8

The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa(4)Se(8), as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

Electronic subband reconfiguration in a d0-perovskite induced by strain-driven structural transformations

It is well known that transport in lightly n-doped SrTiO(3) involves light and heavy electron bands. We have found that upon application of moderate quasi-isotropic pressures, the relative positions of these subbands are changed by a few meV and, eventually, a band inversion occurs at ~1 kbar. Such effects are, however, suppressed in the closely related KTaO(3) perovskite. We show that the extremely subtle electronic reconfiguration in SrTiO(3) is triggered by strain-induced structural transformations that are accompanied by remarkable mobility enhancements up to about Δμ/μ≈300%. Our results provide a microscopic rationale for the recently discovered transport enhancement under strain and underscore the role of the internal structural degrees of freedom in the modulation of the perovskite electronic properties.

Dynamical mean field theory of an effective three-band model for NaxCoO2

We derive an effective Hamiltonian for highly correlated t_{2g} states centered at the Co sites of NaxCoO2. The essential ingredients of the model are an O mediated hopping, a trigonal crystal-field splitting, and on-site effective interactions derived from the exact solution of a multiorbital model in a CoO6 cluster, with parameters determined previously. The effective model is solved by dynamical mean field theory. We obtain a Fermi surface and electronic dispersion that agrees well with angle-resolved photoemission spectra. Our results also elucidate the origin of the "sinking pockets" in different doping regimes.

Non-volatile resistive switching in the dielectric superconductor YBa(2)Cu(3)O(7-δ)

We report on the reversible, non-volatile and polarity-dependent resistive switching between superconductor and insulator states at the interfaces of an Au/YBa(2)Cu(3)O(7-δ) (YBCO)/Au system. We show that, upon application of electric pulses, the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. In addition, four-wire measurements reveal that pulsing also induces significant non-volatile changes in the bulk resistance. We argue that our observations are compatible with a scenario where the switching effect is due to migration of oxygen ions along grain boundaries that control the inter-grain superconducting coupling.

Non-Fermi-liquid behavior in the periodic anderson model

We study the Mott metal-insulator transition in the periodic Anderson model with dynamical mean field theory (DMFT). Near the quantum transition, we find a non-Fermi-liquid metallic state down to a vanishing temperature scale. We identify the origin of the non-Fermi-liquid behavior as being due to magnetic scattering of the doped carriers by the localized moments. The non-Fermi-liquid state can be tuned by either doping or external magnetic field. Our results show that the coupling to spatial magnetic fluctuations (absent in DMFT) is not a prerequisite to realizing a non-Fermi-liquid scenario for heavy fermion systems.

Metal-insulator transitions in the periodic Anderson model

We solve the periodic Anderson model in the Mott-Hubbard regime, using dynamical mean field theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band Hubbard model, namely, with a divergent effective mass and a first order character at finite temperatures. Surprisingly, upon hole doping, the metal-insulator transition is not first order and does not show a divergent mass. Thus, the transition scenario of the single band Hubbard model is not generic for the periodic Anderson model, even in the Mott-Hubbard regime.

Mechanism of electric-pulse-induced resistance switching in manganites

We investigate the electric-pulse-induced resistance switching in manganite systems. We find a "complementarity" effect where the contact resistance of electrodes at opposite ends show variations of opposite sign and is reversible. The temperature dependence of the magnitude of the effect reveals a dramatic enhancement at a temperature T*, below the metal-insulator transition. We qualitatively capture these features with a theoretical model, providing evidence for the physical mechanism of the resistance switching. We argue that doping control of the electronic state of the oxide at the interfaces is the mechanism driving the effect.

Quantum magnets with anisotropic infinite range random interactions

Using exact diagonalization techniques, we study the dynamical response of the anisotropic disordered Heisenberg model for systems of S=1/2 spins with infinite range random exchange interactions at temperature T=0. The model can be considered as a generalization, to the quantum case, of the well-known Sherrington-Kirkpatrick classical spin glass model. We also compute and study the behavior of the Edwards Anderson order parameter and energy per spin as the anisotropy evolves from the Ising to the Heisenberg limits.

Dynamical mean field theory with the density matrix renormalization group

A new numerical method for the solution of the dynamical mean field theory's self-consistent equations is introduced. The method uses the density matrix renormalization group technique to solve the associated impurity problem. The new algorithm makes no a priori approximations and is only limited by the number of sites that can be considered. We obtain accurate estimates of the critical values of the metal-insulator transitions and provide evidence of substructure in the Hubbard bands of the correlated metal. With this algorithm, more complex models having a larger number of degrees of freedom can be considered and finite-size effects can be minimized.

Nonvolatile memory with multilevel switching: a basic model

There is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure. We solve the model using numerical simulations and the basic carrier transfer mechanism is unveiled in detail. Our model captures three key features observed in experiments: multilevel switchability of the resistance, its memory retention, and hysteretic behavior in the current-voltage curve.

Quantum and thermal fluctuations in the SU(N) Heisenberg spin-glass model near the quantum critical point

We solve for the SU(N) Heisenberg spin glass in the limit of large N focusing on small S and T. We study the effect of quantum and thermal fluctuations in the frequency dependent response function and observe interesting transfers of spectral weight. We compute the T dependence of the order parameter and the specific heat and find an unusual T2 behavior for the latter at low temperatures in the spin-glass phase. We find remarkable qualitative agreement with various experiments on the quantum frustrated magnet SrCr(9p)Ga(12-9p)O19.

Compressibility divergence and the finite temperature Mott transition

In the context of the dynamical mean-field theory (DMFT) of the Hubbard model, we study the behavior of the compressibility near the density driven Mott transition at finite temperatures. We demonstrate this divergence using DMFT and quantum Monte Carlo simulations in the one-band and the two-band Hubbard model. We supplement this result with considerations based on the Landau theory framework, and discuss the relevance of our results to the alpha-gamma end point in cerium.

Dynamical response of quantum spin-glass models at t = 0

We study the behavior of two archetypal quantum spin glasses at T = 0 by exact diagonalization techniques: the random Ising model in a transverse field and the random Heisenberg model. The behavior of the dynamical spin response is obtained in the spin-glass ordered phase. In both models it is gapless and has the general form chi(")(omega) = qdelta(omega)+chi(")(reg)(omega), with chi(")(reg)(omega) approximately omega for the Ising and chi(")(reg)(omega) approximately const for the Heisenberg, at low frequencies. The method provides new insight to the physical nature of the low-lying excitations.

Landau theory of the finite temperature mott transition

In the context of the dynamical mean-field theory of the Hubbard model, we identify microscopically an order parameter for the finite temperature Mott end point. We derive a Landau functional of the order parameter. We then use the order parameter theory to elucidate the singular behavior of various physical quantities which are experimentally accessible.