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Park DS, Rata AD, Dahm RT, Chu K, Gan Y, Maznichenko I, Ostanin S, Trier F, Baik H, Choi WS, Choi CJ, Kim YH, Rees GJ, Gíslason HP, Buczek PA, Mertig I, Ionescu MA, Ernst A, Dörr K, Muralt P, Pryds N. Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures. Adv Mater 2023; 35:e2300200. [PMID: 37154173 DOI: 10.1002/adma.202300200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Revised: 05/01/2023] [Indexed: 05/10/2023]
Abstract
Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self-assembling bottom-up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom-up self-assembly is extended to a new approach using a mixture containing a 2Dlayer-by-layer film growth, followed by a 3D VAN film growth. In this work, the two-phase nanocomposite thin films are based on LaAlO3 :LaBO3 , grown on a lattice-mismatched SrTiO3001 (001) single crystal. The 2D-to-3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.
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Affiliation(s)
- Dae-Sung Park
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
- Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Aurora Diana Rata
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Rasmus Tindal Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
| | - Kanghyun Chu
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Yulin Gan
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Igor Maznichenko
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Sergey Ostanin
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Felix Trier
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
| | - Hionsuck Baik
- Korea Basic Science Institute, Seoul, 02841, Republic of Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Chel-Jong Choi
- School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 54596, Republic of Korea
| | - Young Heon Kim
- Graduate School of Analytical Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Gregory Jon Rees
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | | | - Paweł Adam Buczek
- Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, 20099, Hamburg, Germany
| | - Ingrid Mertig
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Mihai Adrian Ionescu
- Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Arthur Ernst
- Max-Planck-Institut für Mikrostrukturphysik, 06120, Halle, Germany
- Institute of Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria
| | - Kathrin Dörr
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Paul Muralt
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
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Erlandsen R, Dahm RT, Trier F, Scuderi M, Di Gennaro E, Sambri A, Reffeldt Kirchert CK, Pryds N, Granozio FM, Jespersen TS. A Two-Dimensional Superconducting Electron Gas in Freestanding LaAlO 3/SrTiO 3 Micromembranes. Nano Lett 2022; 22:4758-4764. [PMID: 35679577 DOI: 10.1021/acs.nanolett.2c00992] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Freestanding oxide membranes constitute an intriguing material platform for new functionalities and allow integration of oxide electronics with technologically important platforms such as silicon. Sambri et al. recently reported a method to fabricate freestanding LaAlO3/SrTiO3 (LAO/STO) membranes by spalling of strained heterostructures. Here, we first develop a scheme for the high-yield fabrication of membrane devices on silicon. Second, we show that the membranes exhibit metallic conductivity and a superconducting phase below ∼200 mK. Using anisotropic magnetotransport we extract the superconducting phase coherence length ξ ≈ 36-80 nm and establish an upper bound on the thickness of the superconducting electron gas d ≈ 17-33 nm, thus confirming its two-dimensional character. Finally, we show that the critical current can be modulated using a silicon-based backgate. The ability to form superconducting nanostructures of LAO/STO membranes, with electronic properties similar to those of the bulk counterpart, opens opportunities for integrating oxide nanoelectronics with silicon-based architectures.
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Affiliation(s)
- Ricci Erlandsen
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Rasmus Tindal Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Felix Trier
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Mario Scuderi
- Institute for Microelectronics and Microsystems (CNR-IMM), Strada VIII n.5 Zona Industriale, I-95121 Catania, Italy
| | - Emiliano Di Gennaro
- Dipartimento di Fisica "Ettore Pancini", Università degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cinthia, I-80126 Napoli, Italy
| | - Alessia Sambri
- CNR-SPIN, Complesso Universitario di Monte Sant'Angelo, Via Cinthia, I-80126 Napoli, Italy
| | | | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Fabio Miletto Granozio
- CNR-SPIN, Complesso Universitario di Monte Sant'Angelo, Via Cinthia, I-80126 Napoli, Italy
| | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
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Li H, Gan Y, Husanu MA, Dahm RT, Christensen DV, Radovic M, Sun J, Shi M, Shen B, Pryds N, Chen Y. Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement. ACS Nano 2022; 16:6437-6443. [PMID: 35312282 DOI: 10.1021/acsnano.2c00609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The electronic structure as well as the mechanism underlying the high-mobility two-dimensional electron gases (2DEGs) at complex oxide interfaces remain elusive. Herein, using soft X-ray angle-resolved photoemission spectroscopy (ARPES), we present the band dispersion of metallic states at buffered LaAlO3/SrTiO3 (LAO/STO) heterointerfaces where a single-unit-cell LaMnO3 (LMO) spacer not only enhances the electron mobility but also renders the electronic structure robust toward X-ray radiation. By tracing the evolution of band dispersion, orbital occupation, and electron-phonon interaction of the interfacial 2DEG, we find unambiguous evidence that the insertion of the LMO buffer strongly suppresses both the formation of oxygen vacancies as well as the electron-phonon interaction on the STO side. The latter effect makes the buffered sample different from any other STO-based interfaces and may explain the maximum mobility enhancement achieved at buffered oxide interfaces.
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Affiliation(s)
- Hang Li
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
| | - Yulin Gan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Marius-Adrian Husanu
- National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
| | - Rasmus Tindal Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | | | - Milan Radovic
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Ming Shi
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
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