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Montanaro A, Piccinini G, Mišeikis V, Sorianello V, Giambra MA, Soresi S, Giorgi L, D'Errico A, Watanabe K, Taniguchi T, Pezzini S, Coletti C, Romagnoli M. Sub-THz wireless transmission based on graphene-integrated optoelectronic mixer. Nat Commun 2023; 14:6471. [PMID: 37833246 PMCID: PMC10575943 DOI: 10.1038/s41467-023-42194-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 10/03/2023] [Indexed: 10/15/2023] Open
Abstract
Optoelectronics is a valuable solution to scale up wireless links frequency to sub-THz in the next generation antenna systems and networks. Here, we propose a low-power consumption, small footprint building block for 6 G and 5 G new radio wireless transmission allowing broadband capacity (e.g., 10-100 Gb/s per link and beyond). We demonstrate a wireless datalink based on graphene, reaching setup limited sub-THz carrier frequency and multi-Gbit/s data rate. Our device consists of a graphene-based integrated optoelectronic mixer capable of mixing an optically generated reference oscillator approaching 100 GHz, with a baseband electrical signal. We report >96 GHz optoelectronic bandwidth and -44 dB upconversion efficiency with a footprint significantly smaller than those of state-of-the-art photonic transmitters (i.e., <0.1 mm2). These results are enabled by an integrated-photonic technology based on wafer-scale high-mobility graphene and pave the way towards the development of optoelectronics-based arrayed-antennas for millimeter-wave technology.
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Affiliation(s)
- Alberto Montanaro
- Photonic Networks and Technologies Lab - CNIT, Via G. Moruzzi,1, 56124, Pisa, Italy.
- TeCIP Institute, Scuola Superiore Sant'Anna, via G. Moruzzi 1, 56124, Pisa, Italy.
| | - Giulia Piccinini
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127, Pisa, Italy
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127, Pisa, Italy
| | - Vaidotas Mišeikis
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127, Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163, Genova, Italy
| | - Vito Sorianello
- Photonic Networks and Technologies Lab - CNIT, Via G. Moruzzi,1, 56124, Pisa, Italy
| | - Marco A Giambra
- Inphotec, CamGraPhIC srl, via G. Moruzzi 1, 56124, Pisa, Italy
| | - Stefano Soresi
- Inphotec, CamGraPhIC srl, via G. Moruzzi 1, 56124, Pisa, Italy
| | - Luca Giorgi
- Ericsson Research, via G. Moruzzi 1, 56124, Pisa, Italy
| | | | - K Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - T Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Sergio Pezzini
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, P.zza S. Silvestro 12, 56127, Pisa, Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127, Pisa, Italy
- Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163, Genova, Italy
| | - Marco Romagnoli
- Photonic Networks and Technologies Lab - CNIT, Via G. Moruzzi,1, 56124, Pisa, Italy
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2
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Sorianello V, Montanaro A, Giambra MA, Ligato N, Templ W, Galli P, Romagnoli M. Graphene Photonics I/Q Modulator for Advanced Modulation Formats. ACS Photonics 2023; 10:1446-1453. [PMID: 37215326 PMCID: PMC10197173 DOI: 10.1021/acsphotonics.3c00015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Indexed: 05/24/2023]
Abstract
Starting from its classical domain of long distance links, optical communication is conquering new application areas down to chip-to-chip interconnections in response to the ever-increasing demand for higher bandwidth. The use of coherent modulation formats, typically employed in long-haul systems, is now debated to be extended to short links to increase the bandwidth density. Next-generation transceivers are targeting high bandwidth, high energy efficiency, compact footprint, and low cost. Integrated photonics is the only technology to reach this goal, and silicon photonics is expected to play the leading actor. However, silicon modulators have some limits, in terms of bandwidth and footprint. Graphene is an ideal material to be integrated with silicon photonics to meet the requirements of next generation transceivers. This material provides optimal properties: high mobility, fast carrier dynamics and ultrabroadband optical properties. Graphene photonics for direct detection systems based on binary modulation formats have been demonstrated so far, including electro-absorption modulators, phase modulators, and photodetectors. However, coherent modulation for increased data-rates has not yet been reported for graphene photonics yet. In this work, we present the first graphene photonics I/Q modulator based on four graphene on silicon electro-absorption modulators for advanced modulation formats and demonstrate quadrature phase shift keying (QPSK) modulation up to 40 Gb/s.
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Affiliation(s)
- Vito Sorianello
- Photonic
Networks and Technologies Lab − CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Alberto Montanaro
- Photonic
Networks and Technologies Lab − CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- Tecip
Institute − Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | | | - Nadia Ligato
- INPHOTEC,
CamGraPhIC srl, Via G.
Moruzzi 1, 56124 Pisa, Italy
| | - Wolfgang Templ
- Nokia
Bell Laboratories, Magirusstr. 10, 70469 Stuttgart, Germany
| | - Paola Galli
- Nokia
Solutions and Networks Italia, via Energy Park 14, 20871 Vimercate, Italy
| | - Marco Romagnoli
- Photonic
Networks and Technologies Lab − CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
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3
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Tavani G, Barri C, Mafakheri E, Franzò G, Celebrano M, Castriotta M, Di Giancamillo M, Ferrari G, Picciariello F, Foletto G, Agnesi C, Vallone G, Villoresi P, Sorianello V, Rotta D, Finazzi M, Bollani M, Prati E. Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths. Materials (Basel) 2023; 16:2344. [PMID: 36984223 PMCID: PMC10055106 DOI: 10.3390/ma16062344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2023] [Revised: 03/07/2023] [Accepted: 03/08/2023] [Indexed: 06/18/2023]
Abstract
Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si. Such sources are fabricated with a fully-compatible CMOS process on a 220 nm-thick silicon-on-insulator (SOI) wafer, the common standard in silicon photonics. The implantation depth is tuned to match the center of the silicon layer. The erbium and oxygen co-doping ratio is tuned to optimize the electroluminescence signal. We fabricate a batch of Er:O diodes with surface areas ranging from 1 µm × 1 µm to 50 µm × 50 µm emitting 1550 nm photons at room temperature. We demonstrate emission rates around 5 × 106 photons/s for a 1 µm × 1 µm device at room temperature using superconducting nanowire detectors cooled at 0.8 K. The demonstration of Er:O diodes integrated in the 220 nm SOI platform paves the way towards the creation of integrated silicon photon sources suitable for arbitrary-statistic-tolerant QKD protocols.
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Affiliation(s)
- Giulio Tavani
- L-NESS, Department of Physics, Politecnico di Milano, Via Francesco Anzani 42, I-22100 Como, Italy
| | - Chiara Barri
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Erfan Mafakheri
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Giorgia Franzò
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e i Microsistemi (CNR-IMM), Via Santa Sofia 64, I-95123 Catania, Italy
| | - Michele Celebrano
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Michele Castriotta
- Department of Electronics, Information and Bioengineering, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Matteo Di Giancamillo
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
- Department of Electronics, Information and Bioengineering, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Giorgio Ferrari
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Francesco Picciariello
- Department of Information Engineering, Università degli Studi di Padova, Via Gradenigo 6B, I-35131 Padua, Italy
| | - Giulio Foletto
- Department of Information Engineering, Università degli Studi di Padova, Via Gradenigo 6B, I-35131 Padua, Italy
| | - Costantino Agnesi
- Department of Information Engineering, Università degli Studi di Padova, Via Gradenigo 6B, I-35131 Padua, Italy
| | - Giuseppe Vallone
- Department of Information Engineering, Università degli Studi di Padova, Via Gradenigo 6B, I-35131 Padua, Italy
| | - Paolo Villoresi
- Department of Information Engineering, Università degli Studi di Padova, Via Gradenigo 6B, I-35131 Padua, Italy
| | - Vito Sorianello
- Photonic Networks and Technologies Lab., Consorzio Nazionale Interuniversitario per le Telecomunicazioni (CNIT), I-56124 Pisa, Italy
| | - Davide Rotta
- CamGraPhIC Srl, Via G. Moruzzi 1, I-56124 Pisa, Italy
- TeCIP Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, I-56124 Pisa, Italy
| | - Marco Finazzi
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Monica Bollani
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
| | - Enrico Prati
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
- Department of Physics “Aldo Pontremoli”, Università degli Studi di Milano, Via Celoria 16, I-20133 Milan, Italy
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4
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Schuler S, Muench JE, Ruocco A, Balci O, Thourhout DV, Sorianello V, Romagnoli M, Watanabe K, Taniguchi T, Goykhman I, Ferrari AC, Mueller T. High-responsivity graphene photodetectors integrated on silicon microring resonators. Nat Commun 2021; 12:3733. [PMID: 34145226 PMCID: PMC8213857 DOI: 10.1038/s41467-021-23436-x] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 04/14/2021] [Indexed: 02/05/2023] Open
Abstract
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the current GPDs' low responsivity when compared to conventional PDs. Here we overcome this by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve >90% light absorption in a ~6 μm SLG channel along a Si waveguide. Cavity-enhanced light-matter interactions cause carriers in SLG to reach ~400 K for an input power ~0.6 mW, resulting in a voltage responsivity ~90 V/W, with a receiver sensitivity enabling our GPDs to operate at a 10-9 bit-error rate, on par with mature semiconductor technology, but with a natural generation of a voltage, rather than a current, thus removing the need for transimpedance amplification, with a reduction of energy-per-bit, cost, and foot-print.
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Affiliation(s)
- S Schuler
- Vienna University of Technology, Institute of Photonics, Vienna, Austria
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - J E Muench
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - A Ruocco
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - O Balci
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - D van Thourhout
- Ghent University-IMEC, Photonics Research Group, Gent, Belgium
| | - V Sorianello
- Consorzio Nazionale per le Telecomunicazioni and Inphotec, Pisa, Italy
| | - M Romagnoli
- Consorzio Nazionale per le Telecomunicazioni and Inphotec, Pisa, Italy
| | - K Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | - T Taniguchi
- National Institute for Materials Science, Tsukuba, Japan
| | - I Goykhman
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Technion-Israel Institute of Technology, Haifa, Israel
| | - A C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
| | - T Mueller
- Vienna University of Technology, Institute of Photonics, Vienna, Austria.
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5
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Giambra M, Mišeikis V, Pezzini S, Marconi S, Montanaro A, Fabbri F, Sorianello V, Ferrari AC, Coletti C, Romagnoli M. Wafer-Scale Integration of Graphene-Based Photonic Devices. ACS Nano 2021; 15:3171-3187. [PMID: 33522789 PMCID: PMC7905876 DOI: 10.1021/acsnano.0c09758] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2020] [Accepted: 01/21/2021] [Indexed: 05/13/2023]
Abstract
Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapor deposition (CVD) of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ∼80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ∼5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1 dB V-1 for device lengths ∼30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. The processes are compatible with full automation. This paves the way for large scale production of graphene-based photonic devices.
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Affiliation(s)
- Marco
A. Giambra
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- INPHOTEC, Via G. Moruzzi 1, 56124 Pisa, Italy
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Pezzini
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- NEST,
Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Simone Marconi
- Photonic
Networks and Technologies Lab, Tecip Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Alberto Montanaro
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Filippo Fabbri
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- NEST,
Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Vito Sorianello
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, Cambridge University, 9 J.J. Thompson, Cambridge, U.K.
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Marco Romagnoli
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- INPHOTEC, Via G. Moruzzi 1, 56124 Pisa, Italy
- CamGraPhiC, Via Moruzzi 1, 56124 Pisa, Italy
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6
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Agarwal H, Terrés B, Orsini L, Montanaro A, Sorianello V, Pantouvaki M, Watanabe K, Taniguchi T, Thourhout DV, Romagnoli M, Koppens FHL. 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators. Nat Commun 2021; 12:1070. [PMID: 33594048 PMCID: PMC7887197 DOI: 10.1038/s41467-021-20926-w] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2020] [Accepted: 12/18/2020] [Indexed: 11/18/2022] Open
Abstract
Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs. Here, three-dimensional hafnium oxide and two-dimensional hexagonal boron nitride are integrated in the insulating section of double-layer graphene optical modulators, leading to a maximum bandwidth of 39 GHz and enhanced modulation efficiency.
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Affiliation(s)
- Hitesh Agarwal
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), 08860, Spain
| | - Bernat Terrés
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), 08860, Spain.
| | - Lorenzo Orsini
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), 08860, Spain.,Dipartimento di Fisica "E. Fermi", Università di Pisa, Pisa, 56127, Italy
| | - Alberto Montanaro
- Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory, Pisa, 56124, Italy
| | - Vito Sorianello
- Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory, Pisa, 56124, Italy
| | | | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tuskuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Dries Van Thourhout
- Photonics Research Group, Department of Information Technology, Ghent University-IMEC, Gent, 9000, Belgium
| | - Marco Romagnoli
- Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory, Pisa, 56124, Italy
| | - Frank H L Koppens
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), 08860, Spain. .,ICREA-Institució Catalana de Recerca i Estudis Avançats, Barcelona, 08010, Spain.
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7
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Marconi S, Giambra MA, Montanaro A, Mišeikis V, Soresi S, Tirelli S, Galli P, Buchali F, Templ W, Coletti C, Sorianello V, Romagnoli M. Photo thermal effect graphene detector featuring 105 Gbit s -1 NRZ and 120 Gbit s -1 PAM4 direct detection. Nat Commun 2021; 12:806. [PMID: 33547318 PMCID: PMC7864989 DOI: 10.1038/s41467-021-21137-z] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2020] [Accepted: 01/13/2021] [Indexed: 01/30/2023] Open
Abstract
One of the main challenges of next generation optical communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Graphene has been recently proposed to be integrated with silicon photonics to meet these goals because of its high mobility, fast carrier dynamics and ultra-broadband optical properties. We focus on graphene photodetectors for high speed datacom and telecom applications based on the photo-thermo-electric effect, allowing for direct optical power to voltage conversion, zero dark current, and ultra-fast operation. We report on a chemical vapour deposition graphene photodetector based on the photo-thermoelectric effect, integrated on a silicon waveguide, providing frequency response >65 GHz and optimized to be interfaced to a 50 Ω voltage amplifier for direct voltage amplification. We demonstrate a system test leading to direct detection of 105 Gbit s-1 non-return to zero and 120 Gbit s-1 4-level pulse amplitude modulation optical signals.
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Affiliation(s)
- S. Marconi
- grid.263145.70000 0004 1762 600XTecip Institute – Scuola Superiore Sant’Anna, Pisa, Italy
| | - M. A. Giambra
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
| | - A. Montanaro
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
| | - V. Mišeikis
- grid.25786.3e0000 0004 1764 2907Center for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Pisa, Italy ,grid.25786.3e0000 0004 1764 2907Graphene Labs, Istituto Italiano di Tecnologia, Genova, Italy
| | - S. Soresi
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy ,Fondazione INPHOTEC, Pisa, Italy
| | - S. Tirelli
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy ,Fondazione INPHOTEC, Pisa, Italy
| | - P. Galli
- Nokia Solutions and Networks Italia, Vimercate, Italy
| | - F. Buchali
- grid.425792.fNokia Bell Labs, Stuttgart, Germany
| | - W. Templ
- grid.425792.fNokia Bell Labs, Stuttgart, Germany
| | - C. Coletti
- grid.25786.3e0000 0004 1764 2907Center for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Pisa, Italy ,grid.25786.3e0000 0004 1764 2907Graphene Labs, Istituto Italiano di Tecnologia, Genova, Italy
| | - V. Sorianello
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
| | - M. Romagnoli
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
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8
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Di Giancamillo M, Biagioni P, Sorianello V, Prati E. Design of erbium doped silicon nanocavities for single photon applications. EPJ Web Conf 2021. [DOI: 10.1051/epjconf/202125504001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Silicon-based quantum communication technologies are becoming a factual reality. However, the challenges related to an earth-space unifying technology are several, and nowadays an integrated source compatible with the CMOS technology is still missing. Here we present the design of a weak photon source consisting of a LED able to emit directly into the optical circuit and obtained through the doping of a portion of a silicon waveguide with ErOx complexes. To enhance the radiative emission, the source is placed inside a resonant cavity delimited by two waveguide Bragg mirrors. A study on the performance of the device is carried out as a function of different parameters, such as the geometry of the cavity and of the contacts used to electrically excite the defects, the doping level, and the characteristics of the mirrors. We design a prototype that guarantees a Purcell factor in the order of tens, emitting ideally 107-108 photons per second. The simulations provide a promising ground to further develop fully integrated single photon sources in silicon photonic circuits.
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9
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Mišeikis V, Marconi S, Giambra MA, Montanaro A, Martini L, Fabbri F, Pezzini S, Piccinini G, Forti S, Terrés B, Goykhman I, Hamidouche L, Legagneux P, Sorianello V, Ferrari AC, Koppens FHL, Romagnoli M, Coletti C. Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides. ACS Nano 2020; 14:11190-11204. [PMID: 32790351 PMCID: PMC7513472 DOI: 10.1021/acsnano.0c02738] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
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Affiliation(s)
- Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Simone Marconi
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- TeCIP
Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Marco A. Giambra
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- TeCIP
Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Alberto Montanaro
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Leonardo Martini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Filippo Fabbri
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Pezzini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Giulia Piccinini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Stiven Forti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Bernat Terrés
- ICFO
- Institut
de Ciencies Fotoniques, the Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Spain
| | - Ilya Goykhman
- Technion
- Israel Institute of Technology, Technion City, 3200003 Haifa, Israel
| | - Louiza Hamidouche
- Thales
Research and Technology, 1, Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Pierre Legagneux
- Thales
Research and Technology, 1, Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Vito Sorianello
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, Cambridge University, 9 J.J. Thompson Avenue, Cambridge CB3 OFA, United Kingdom
| | - Frank H. L. Koppens
- ICFO
- Institut
de Ciencies Fotoniques, the Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Spain
- ICREA,
Institució Catalana de Recerça i Estudis Avancats, Barcelona 08010, Spain
| | - Marco Romagnoli
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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10
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Muench JE, Ruocco A, Giambra MA, Miseikis V, Zhang D, Wang J, Watson HFY, Park GC, Akhavan S, Sorianello V, Midrio M, Tomadin A, Coletti C, Romagnoli M, Ferrari AC, Goykhman I. Waveguide-Integrated, Plasmonic Enhanced Graphene Photodetectors. Nano Lett 2019; 19:7632-7644. [PMID: 31536362 DOI: 10.1021/acs.nanolett.9b02238] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.2 V/W with a 3 dB bandwidth ∼42 GHz. We utilize Au split-gates to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases the light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele- and datacom modules.
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Affiliation(s)
- Jakob E Muench
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Alfonso Ruocco
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Marco A Giambra
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
| | - Vaidotas Miseikis
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
- Center for Nanotechnology Innovation @ NEST , Istituto Italiano di Tecnologia , 56127 Pisa , Italy
- Graphene Labs , Istituto Italiano di Tecnologia , 16163 Genova , Italy
| | - Dengke Zhang
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Junjia Wang
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Hannah F Y Watson
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Gyeong C Park
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Shahab Akhavan
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Vito Sorianello
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
| | - Michele Midrio
- Consorzio Nazionale per le Telecomunicazioni , University of Udine , 33100 Udine , Italy
| | - Andrea Tomadin
- Dipartimento di Fisica , Università di Pisa , Largo Bruno Pontecorvo 3 , 56127 Pisa , Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation @ NEST , Istituto Italiano di Tecnologia , 56127 Pisa , Italy
- Graphene Labs , Istituto Italiano di Tecnologia , 16163 Genova , Italy
| | - Marco Romagnoli
- Consorzio Nazionale per le Telecomunicazioni , 56124 Pisa , Italy
| | - Andrea C Ferrari
- Cambridge Graphene Centre , University of Cambridge , Cambridge CB3 0FA , United Kingdom
| | - Ilya Goykhman
- Micro Nanoelectronics Research Center , Technion , Haifa 320000 , Israel
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11
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Giambra MA, Sorianello V, Miseikis V, Marconi S, Montanaro A, Galli P, Pezzini S, Coletti C, Romagnoli M. High-speed double layer graphene electro-absorption modulator on SOI waveguide. Opt Express 2019; 27:20145-20155. [PMID: 31510114 DOI: 10.1364/oe.27.020145] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.
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12
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Scotti F, Onori D, Porzi C, Falconi F, Sorianello V, Alves A, Imran M, Pinna S, Cerqueira A, Romagnoli M, Bogoni A. Dual use architecture for innovative lidar and free space optical communications. Appl Opt 2017; 56:8811-8815. [PMID: 29091696 DOI: 10.1364/ao.56.008811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2017] [Accepted: 10/04/2017] [Indexed: 06/07/2023]
Abstract
An innovative and effective architecture for lidar systems is presented and experimentally demonstrated. The proposed scheme can also be easily exploited for optical communications. In particular, the system includes an innovative lidar software-defined architecture based on optically coherent detection, overcoming current drawbacks of time of flight incoherent systems. The experiments demonstrate the ability to perform long range detection resorting to the waveform compression on the continuous wave approach, obtaining a range resolution of 15 cm with a sensitivity of -95 dBm. Beside the bulk implementation, the system has been also implemented in a photonic integrated circuit using complementary metal-oxide-semiconductor-compatible silicon on insulator technology with an extremely reduced footprint of 1.5 mm×3.5 mm. The testing of the integrated device confirms the effectiveness of this proof-of-concept realization.
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13
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Sorianello V, Contestabile G, Midrio M, Pantouvaki M, Asselbergs I, Van Campenhout J, Huyghebaerts C, D'Errico A, Galli P, Romagnoli M. Chirp management in silicon-graphene electro absorption modulators. Opt Express 2017; 25:19371-19381. [PMID: 29041131 DOI: 10.1364/oe.25.019371] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2017] [Accepted: 07/19/2017] [Indexed: 06/07/2023]
Abstract
We study the frequency chirp properties of graphene-on-silicon electro-absorption modulators (EAMs). By experimentally measuring the chirp of a 100 µm long single layer graphene EAM, we show that the optoelectronic properties of graphene induce a large positive linear chirp on the optical signal generated by the modulator, giving rise to a maximum shift of the instantaneous frequency up to 1.8 GHz. We exploit this peculiar feature for chromatic-dispersion compensation in fiber optic transmission thanks to the pulse temporal lensing effect. In particular, we show dispersion compensation in a 10Gb/s transmission experiment on standard single mode fiber with temporal focusing distance (0-dB optical-signal-to-noise ratio penalty) of 60 km, and also demonstrate 100 km transmission with a bit error rate largely lower than the conventional Reed-Solomon forward error correction threshold of 10-3.
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14
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Sorianello V, De Angelis G, Cassese T, Midrio M, Romagnoli M, Moshin M, Otto M, Neumaier D, Asselberghs I, Van Campenhout J, Huyghebaert C. Complex effective index in graphene-silicon waveguides. Opt Express 2016; 24:29984-29993. [PMID: 28059383 DOI: 10.1364/oe.24.029984] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report for the first time and characterize experimentally the complex optical conductivity of graphene on silicon photonic waveguides. This permits us to predict accurately the behavior of photonic integrated devices encompassing graphene layers. Exploiting a Si microring add/drop resonator, we show the effect of electrical gating of graphene on the complex effective index of the waveguide by measuring both the wavelength shift of the resonance and the change in the drop peak transmission. Due to electro-refractive effect of graphene a giant (>10-3) change in the effective index is demonstrated for the first time on Si photonics waveguides and this large effect will crucially impact performances and consumption of Si photonics devices. We confirmed the results by two independent experiments involving two different gating schemes: Si gating through the ridge waveguide, and polymer-electrolyte gating. Both the experiments demonstrate a very large phase effect in good agreement with numerical calculations. The reported results validate the Kubo model for the case of graphene-Si photonics interfaces and for propagation in this type of waveguide. This is fundamental for the next design and fabrication of future graphene-silicon photonics devices.
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15
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Sorianello V, Angelis GD, Cassese T, Preite MV, Velha P, Bianchi A, Romagnoli M, Testa F. Polarization insensitive silicon photonic ROADM with selectable communication direction for radio access networks. Opt Lett 2016; 41:5688-5691. [PMID: 27973490 DOI: 10.1364/ol.41.005688] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report on an experimental prototype of a low-cost silicon photonic reconfigurable optical add/drop multiplexer (ROADM). The device is able to operate with up to 12 wavelength division multiplexing channels. In order to control the polarization of the multi-wavelength signal at the input of the device, an integrated polarization controller is investigated as an alternative to the polarization diversity device architecture. The integrated ROADM is equipped with optical switches for the selection of the path direction and variable optical attenuators for optical power control. We demonstrate the polarization insensitive routing of 10 Gb/s channels between two ROADM nodes with error-free transmission.
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16
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Velha P, Sorianello V, Preite MV, De Angelis G, Cassese T, Bianchi A, Testa F, Romagnoli M. Wide-band polarization controller for Si photonic integrated circuits. Opt Lett 2016; 41:5656-5659. [PMID: 27973482 DOI: 10.1364/ol.41.005656] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A circuit for the management of any arbitrary polarization state of light is demonstrated on an integrated silicon (Si) photonics platform. This circuit allows us to adapt any polarization into the standard fundamental TE mode of a Si waveguide and, conversely, to control the polarization and set it to any arbitrary polarization state. In addition, the integrated thermal tuning allows kilohertz speed which can be used to perform a polarization scrambler. The circuit was used in a WDM link and successfully used to adapt four channels into a standard Si photonic integrated circuit.
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Sorianello V, De Angelis G, De Iacovo A, Colace L, Faralli S, Romagnoli M. High responsivity SiGe heterojunction phototransistor on silicon photonics platform. Opt Express 2015; 23:28163-28169. [PMID: 26561087 DOI: 10.1364/oe.23.028163] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report on a novel near infrared SiGe phototransistor fabricated by a standard silicon photonics foundry. The device is first investigated by simulations. The fabricated devices are characterized in terms of current-voltage characteristics at different optical power. Typical phototransistors exhibit 1.55µm record responsivity at low optical power exceeding 232A/W and 42A/W at 5V and 1V bias, respectively. A differential detection scheme is also proposed for the dark current cancellation to significantly increase the device sensitivity.
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18
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Socci L, Sorianello V, Romagnoli M. 300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking. Opt Express 2015; 23:19261-19271. [PMID: 26367587 DOI: 10.1364/oe.23.019261] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.
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Sorianello V, Midrio M, Romagnoli M. Design optimization of single and double layer Graphene phase modulators in SOI. Opt Express 2015; 23:6478-90. [PMID: 25836866 DOI: 10.1364/oe.23.006478] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
In this paper we report on an electro-refractive modulator based on single or double-layer graphene on top of silicon waveguides. The graphene layers are biased to the transparency condition in order to achieve phase modulation with negligible amplitude modulation. By means of a detailed study of both the electrical and optical properties of graphene and silicon, as well as through optimization of the geometrical parameters, we show that the proposed devices may theoretically outperform existing modulators both in terms of V(π)L and of insertion losses. The overall figures of merit of the proposed devices are as low as 8.5 and 2dB∙V for the single and double layer cases, respectively.
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