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Tanabe Y, Ito Y, Sugawara K, Jeong S, Ohto T, Nishiuchi T, Kawada N, Kimura S, Aleman CF, Takahashi T, Kotani M, Chen M. Coexistence of Urbach-Tail-Like Localized States and Metallic Conduction Channels in Nitrogen-Doped 3D Curved Graphene. Adv Mater 2022; 34:e2205986. [PMID: 36208073 DOI: 10.1002/adma.202205986] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Revised: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Nitrogen (N) doping is one of the most effective approaches to tailor the chemical and physical properties of graphene. By the interplay between N dopants and 3D curvature of graphene lattices, N-doped 3D graphene displays superior performance in electrocatalysis and solar-energy harvesting for energy and environmental applications. However, the electrical transport properties and the electronic states, which are the key factors to understand the origins of the N-doping effect in 3D graphene, are still missing. The electronic properties of N-doped 3D graphene are systematically investigated by an electric-double-layer transistor method. It is demonstrated that Urbach-tail-like localized states are located around the neutral point of N-doped 3D graphene with the background metallic transport channels. The dual nature of electronic states, generated by the synergistic effect of N dopants and 3D curvature of graphene, can be the electronic origin of the high electrocatalysis, enhanced molecular adsorption, and light absorption of N-doped 3D graphene.
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Affiliation(s)
- Yoichi Tanabe
- Department of Applied Science, Okayama University of Science, Okayama, 700-0005, Japan
| | - Yoshikazu Ito
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan
| | - Katsuaki Sugawara
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
- Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
- Center for Spintronics Research Network, Tohoku University, Sendai, 980-8577, Japan
- Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), Tokyo, 102-0076, Japan
| | - Samuel Jeong
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan
| | - Tatsuhiko Ohto
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, 560-8531, Japan
| | - Tomohiko Nishiuchi
- Department of Chemistry, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka, 560-0043, Japan
| | - Naoaki Kawada
- Department of Applied Science, Okayama University of Science, Okayama, 700-0005, Japan
| | - Shojiro Kimura
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan
| | | | - Takashi Takahashi
- Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Motoko Kotani
- Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
- Mathematical Institute, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
| | - Mingwei Chen
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, 21218, USA
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Tanabe Y, Ito Y, Sugawara K, Koshino M, Kimura S, Naito T, Johnson I, Takahashi T, Chen M. Dirac Fermion Kinetics in 3D Curved Graphene. Adv Mater 2020; 32:e2005838. [PMID: 33118240 DOI: 10.1002/adma.202005838] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2020] [Revised: 10/06/2020] [Indexed: 05/24/2023]
Abstract
3D integration of graphene has attracted attention for realizing carbon-based electronic devices. While the 3D integration can amplify various excellent properties of graphene, the influence of 3D curved surfaces on the fundamental physical properties of graphene has not been clarified. The electronic properties of 3D nanoporous graphene with a curvature radius down to 25-50 nm are systematically investigated and the ambipolar electronic states of Dirac fermions are essentially preserved in the 3D graphene nanoarchitectures, while the 3D curvature can effectively suppress the slope of the linear density of states of Dirac fermion near the Fermi level are demonstrated. Importantly, the 3D curvature can be utilized to tune the back-scattering-suppressed electrical transport of Dirac fermions and enhance both electron localization and electron-electron interaction. As a result, nanoscale curvature provides a new degree of freedom to manipulate 3D graphene electrical properties, which may pave a new way to design new 3D graphene devices with preserved 2D electronic properties and novel functionalities.
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Affiliation(s)
- Yoichi Tanabe
- Department of Applied Science, Okayama University of Science, Okayama, 700-0005, Japan
| | - Yoshikazu Ito
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan
| | - Katsuaki Sugawara
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
- Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Mikito Koshino
- Department of Physics, Osaka University, Osaka, 560-0043, Japan
| | - Shojiro Kimura
- Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Tomoya Naito
- Department of Physics, Graduate School of Science, The University of Tokyo, Tokyo, 113-0033, Japan
- RIKEN Nishina Center, Wako, 351-0198, Japan
| | - Isaac Johnson
- Department of Materials Science and Engineering, Hopkins Extreme Materials Institute, Johns Hopkins University, Baltimore, MD, 21218, USA
| | - Takashi Takahashi
- Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Mingwei Chen
- Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
- Department of Materials Science and Engineering, Hopkins Extreme Materials Institute, Johns Hopkins University, Baltimore, MD, 21218, USA
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