Tuning the Intrinsic Stochasticity of Resistive Switching in VO2 Microresistors

Vanadium dioxide (VO2) microresistors exhibit resistive switching above a certain threshold voltage, allowing them to emulate neurons in neuromorphic systems. However, such devices present intrinsic cycle-to-cycle variations in their resistances and threshold voltages, which can be detrimental or beneficial, depending on their use. Here, we study this stochasticity in VO2 microresistors with various grain sizes and dimensions, through high-resolution electrical and optical measurements across numerous cycles. Our results highlight that the cycle-to-cycle variations in threshold voltage increase as the grain size becomes comparable to the device dimensions. We also present observations of multimodal threshold voltage distributions in the smaller-length resistors. To understand the underlying phenomenon, we investigate the relationship between the device insulating resistance and threshold voltage distributions, showing that these modes could correspond to distinct percolation paths and filaments. Our findings provide the first experimentally verified guidelines for designing VO2 devices with minimized/maximized stochasticity, depending on the targeted application.

Re-emerging magnetic order in correlated van der Waals antiferromagnet NiPS3

Van der Waals (vdW) gap is a significant feature that distinguishes vdW magnets from traditional magnets. Manipulating the magnetic properties by changing the vdW gap has been hot topic in condensed matter research. Here we report a re-emerging magnetic order induced by pressure in a correlated vdW antiferromagnetic insulator NiPS3. It is found that the interlayer magnetoresistance (MR) nearly vanishes at the critical pressure where the crystal structure transforms fromC2/mphase to the slidingC2/mphase. On further compression within the slidingC2/mphase, a substantially enhanced MR emerges from low temperature associated with an insulator-to-metal transition, indicating a metallic antiferromagnetic phase. The enhanced re-emerging MR in slidingC2/mphase can be ascribed to the increasing magnetic interaction between neighboring layers due to the vdW gap narrowing. Our results provide important experimental clues for understanding the pressure effects on magnetism in correlated layered materials.

Ultrafast Spin Dynamics and Photoinduced Insulator-to-Metal Transition in α-RuCl3

Laser-induced ultrafast demagnetization is a phenomenon of utmost interest and attracts significant attention because it enables potential applications in ultrafast optoelectronics and spintronics. As a spin-orbit coupling assisted magnetic insulator, α-RuCl3 provides an attractive platform to explore the physics of electronic correlations and unconventional magnetism. Using time-dependent density functional theory, we explore the ultrafast laser-induced dynamics of the electronic and magnetic structures in α-RuCl3. Our study unveils that laser pulses can introduce ultrafast demagnetizations, accompanied by an out-of-equilibrium insulator-to-metal transition in a few tens of femtoseconds. The spin response significantly depends on the laser wavelength and polarization on account of the electron correlations, band renormalizations, and charge redistributions. These findings provide physical insights into the coupling between the electronic and magnetic degrees of freedom in α-RuCl3 and shed light on suppressing the long-range magnetic orders and reaching a proximate spin liquid phase for two-dimensional magnets on an ultrafast time scale.

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO₂) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (J_peak) as well as controllable peak and valley voltages (V_peak/valley). When a phase transition is induced in VO₂, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO₂ resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO₂ threshold voltage tunability characteristics. Moreover, V_peak/valley is easily modulated by controlling the length of VO₂. In addition, a maximum J_peak of 1.6 × 10⁶ A/m² is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.

Light-Induced Mott-Insulator-to-Metal Phase Transition in Ultrathin Intermediate-Spin Ferromagnetic Perovskite Ruthenates

Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO₃ has an itinerant ferromagnetism with a low-spin state. However, the phase of intermediate-spin (IS) ferromagnetic metallic state has never been seen. Here, by means of UV-light irradiation, a photocarrier-doping-induced Mott-insulator-to-metal phase transition is shown in a few atomic layers of perovskite IS ferromagnetic SrRuO_{3- δ} . This new metastable IS metallic phase can be reversibly regulated due to the convenient photocharge transfer from SrTiO₃ substrates to SrRuO_{3- δ} ultrathin films. These dynamical mean-field theory calculations further verify such photoinduced electronic phase transformation, owing to oxygen vacancies and orbital reconstruction. The optical manipulation of charge-transfer finesse is an alternative pathway toward discovering novel metastable phases in strongly correlated systems and facilitates potential light-controlled device applications in optoelectronics and spintronics.

Effects of pressure and strain on physical properties of VI3

The van der Waals ferromagnetic material VI₃is a magnetic Mott insulator. In this work, we investigate the effects of isotropic and anisotropic pressure on the atomic structure and the electronic structure of VI₃using the first-principles method. The in-plane strain induces structural distortion and breaks the three-fold rotational symmetry of the lattice. Both the in-plane and out-of-plane strain widen the conduction and the valence bands, reduce the energy band gap and drive VI₃from a semiconductor to a three-dimensional metal. The structural distortion is not the cause of insulator-to-metal transition. Calculations of the magnetocrystalline anisotropy energy indicate an easy-axis to easy-plane transition when the pressure is higher than 2 GPa. The ferromagnetic Curie temperature falls from 63 K at 0 GPa to 25 K at 6 GPa.

Origin of pressure-induced insulator-to-metal transition in the van der Waals compound FePS3 from first-principles calculations

Pressure-induced insulator-to-metal transition (IMT) has been studied in the van der Waals compound iron thiophosphate (FePS₃ ) using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid Hartree-Fock-DFT B3LYP functional. Our calculations reproduce correctly the IMT at ∼15 GPa, which is accompanied by a reduction of the unit cell volume and of the vdW gap. We found from the detailed analysis of the projected density of states that the 3p states of phosphorus atoms contribute significantly at the bottom of the conduction band. As a result, the collapse of the band gap occurs due to changes in the electronic structure of FePS₃ induced by relative displacements of phosphorus or sulfur atoms along the c-axis direction under pressure.

Tracking the insulator-to-metal phase transition in VO2 with few-femtosecond extreme UV transient absorption spectroscopy

Coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO₂) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M_2,3 edge is used to track the insulator-to-metal phase transition in VO₂ This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase, and measures the phase-transition dynamics in the insulating phase. An understanding of the VO₂ absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V³⁺/d² character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott-Hubbard-type mechanism is favored, as the observed timescales and d² nature of the vanadium metal centers are inconsistent with a Peierls driving force. The findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials.

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing

Atomic layer deposition was adopted to deposit VO_x thin films using vanadyl tri-isopropoxide {VO[O(C₃H₇)]₃, VTIP} and water (H₂O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO_x. The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO₂ and V₂O₅ phases, respectively. The possible band structures of the crystalline VO₂ and V₂O₅ thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V₂O₅ and VO₂ films, respectively.

Electron Transfer Governed Crystal Transformation of Tungsten Trioxide upon Li Ions Intercalation

Reversible insertion/extraction of foreign ions into/from a host lattice constitutes the fundamental operating principle of rechargeable battery and electrochromic materials. The insertion of foreign ions is a far more commonly observed structural evolution of the host lattice, and for the most cases such a lattice evolution is subtle. However, it has not been clear what factors control such a lattice structural evolution. Based on the tungsten trioxide (WO3) model crystal, we use in situ transmission electron microscopy (TEM) combined with density functional theory calculations to explore the nature of Li ions intercalation induced crystal symmetry evolution of WO3. We discovered that Li insertion into the octahedral cavity of the WO3 lattice will lead to a low to high symmetry transition, featuring a sequential monoclinic → tetragonal → cubic phase transition. The density functional theory results reveal that the phase transition is essentially governed by the electron transfer from Li to the WO6 octahedrons, which effectively leads to the weakening the W-O bond and modifies system band structure, resulting in an insulator-to-metal transition. The observation of the electronic effect on crystal symmetry and conductivity is significant, providing deep insights on the intercalation reactions in secondary rechargeable ion batteries and the approach for tailoring the functionalities of material based on insertion of ions in the lattice.

Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films

Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.

ZnO Nanorods on a LaAlO3 -SrTiO3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials.

Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

Quantitative mapping of phase coexistence in Mott-Peierls insulator during electronic and thermally driven phase transition

Quantitative impedance mapping of the spatially inhomogeneous insulator-to-metal transition (IMT) in vanadium dioxide (VO2) is performed with a lateral resolution of 50 nm through near-field scanning microwave microscopy (SMM) at 16 GHz. SMM is used to measure spatially resolved electronic properties of the phase coexistence in an unstrained VO2 film during the electrically as well as thermally induced IMT. A quantitative impedance map of both the electrically driven filamentary conduction and the thermally induced bulk transition is established. This was modeled as a 2-D heterogeneous resistive network where the distribution function of the IMT temperature across the sample is captured. Applying the resistive network model for the electrically induced IMT case, we reproduce the filamentary nature of electronically induced IMT, which elucidates a cascading avalanche effect triggered by the local electric field across nanoscale insulating and metallic domains.