How microscopic epistasis and clonal interference shape the fitness trajectory in a spin glass model of microbial long-term evolution

The adaptive dynamics of evolving microbial populations takes place on a complex fitness landscape generated by epistatic interactions. The population generically consists of multiple competing strains, a phenomenon known as clonal interference. Microscopic epistasis and clonal interference are central aspects of evolution in microbes, but their combined effects on the functional form of the population's mean fitness are poorly understood. Here, we develop a computational method that resolves the full microscopic complexity of a simulated evolving population subject to a standard serial dilution protocol. Through extensive numerical experimentation, we find that stronger microscopic epistasis gives rise to fitness trajectories with slower growth independent of the number of competing strains, which we quantify with power-law fits and understand mechanistically via a random walk model that neglects dynamical correlations between genes. We show that increasing the level of clonal interference leads to fitness trajectories with faster growth (in functional form) without microscopic epistasis, but leaves the rate of growth invariant when epistasis is sufficiently strong, indicating that the role of clonal interference depends intimately on the underlying fitness landscape. The simulation package for this work may be found at https://github.com/nmboffi/spin_glass_evodyn.

Quantum-Dot-Like States in Molybdenum Disulfide Nanostructures Due to the Interplay of Local Surface Wrinkling, Strain, and Dielectric Confinement

The observation of quantum light emission from atomically thin transition metal dichalcogenides has opened a new field of applications for these material systems. The corresponding excited charge-carrier localization has been linked to defects and strain, while open questions remain regarding the microscopic origin. We demonstrate that the bending rigidity of these materials leads to wrinkling of the two-dimensional layer. The resulting strain field facilitates strong carrier localization due to its pronounced influence on the band gap. Additionally, we consider charge carrier confinement due to local changes of the dielectric environment and show that both effects contribute to modified electronic states and optical properties. The interplay of surface wrinkling, strain-induced confinement, and local changes of the dielectric environment is demonstrated for the example of nanobubbles that form when monolayers are deposited on substrates or other two-dimensional materials.

Prospects and Limitations of Transition Metal Dichalcogenide Laser Gain Materials

Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum efficiency. We provide results from microscopic gain calculations of highly excited TMD monolayers and specify requirements to achieve lasing with four commonly used TMD semiconductors. Our approach includes band-structure renormalizations due to excited carriers that trigger a direct-to-indirect band gap transition. As a consequence, we predict a rollover for the gain that limits the excitation regime where laser operation is possible. A parametrization of the peak gain is provided that is used in combination with a rate-equation theory to discuss consequences for experimentally accessible laser characteristics.