Amplified Spontaneous Emission from Electron-Hole Quantum Droplets in Colloidal CdSe Nanoplatelets

Two-dimensional cadmium selenide nanoplatelets (NPLs) exhibit large absorption cross sections and homogeneously broadened band-edge transitions that offer utility in wide-ranging optoelectronic applications. Here, we examine the temperature-dependence of amplified spontaneous emission (ASE) in 4- and 5-monolayer thick NPLs and show that the threshold for close-packed (neat) films decreases with decreasing temperature by a factor of 2-10 relative to ambient temperature owing to extrinsic (trapping) and intrinsic (phonon-derived line width) factors. Interestingly, for pump intensities that exceed the ASE threshold, we find development of intense emission to lower energy in particular provided that the film temperature is ≤200 K. For NPLs diluted in an inert polymer, both biexcitonic ASE and low-energy emission are suppressed, suggesting that described neat-film observables rely upon high chromophore density and rapid, collective processes. Transient emission spectra reveal ultrafast red-shifting with the time of the lower energy emission. Taken together, these findings indicate a previously unreported process of amplified stimulated emission from polyexciton states that is consistent with quantum droplets and constitutes a form of exciton condensate. For studied samples, quantum droplets form provided that roughly 17 meV or less of thermal energy is available, which we hypothesize relates to polyexciton binding energy. Polyexciton ASE can produce pump-fluence-tunable red-shifted ASE even 120 meV lower in energy than biexciton ASE. Our findings convey the importance of biexciton and polyexciton populations in nanoplatelets and show that quantum droplets can exhibit light amplification at significantly lower photon energies than biexcitonic ASE.

Two-Color Amplified Spontaneous Emission from Auger-Suppressed Quantum Dots in Liquids

Colloidal quantum-dot (QD) lasing is normally achieved in close-packed solid-state films, as a high QD volume fraction is required for stimulated emission to outcompete fast Auger decay of optical-gain-active multiexciton states. Here a new type of liquid optical-gain medium is demonstrated, in which compact compositionally-graded QDs (ccg-QDs) that feature strong suppression of Auger decay are liquefied using a small amount of solvent. Transient absorption measurements of ccg-QD liquid suspensions reveal broad-band optical gain spanning a wide spectral range from 560 (green) to 675 nm (red). The gain magnitude is sufficient to realize a two-color amplified spontaneous emission (ASE) at 637 and 594 nm due to the band-edge (1S) and the excited-state (1P) transition, respectively. Importantly, the ASE regime is achieved using quasicontinuous excitation with nanosecond pulses. Furthermore, the ASE is highly stable under prolonged excitation, which stands in contrast to traditional dyes that exhibit strong degradation under identical excitation conditions. These observations point toward a considerable potential of high-density ccg-QD suspensions as liquid, dye-like optical gain media that feature readily achievable spectral tunability and stable operation under intense photoexcitation.

Boosting the Downconversion Luminescence of Tm3+-Doped Nanoparticles for S-Band Polymer Waveguide Amplifier

Polymer waveguide devices have attracted increasing interest in several rapidly developing areas of broadband communications since they are easily adaptable to on-chip integration and promise low propagation losses. As a key member of the waveguide gain medium, lanthanide doped nanoparticles have been intensively studied to improve the downconversion luminescence. However, current research efforts are almost confined to erbium-doped nanoparticles and amplifiers operating at the C-band; boosting the downconversion luminescence of Tm3+ for S-band optical amplification still remains a challenge. Here we report a Tb3+-induced deactivation control to enhance Tm3+ downconversion luminescence in a stoichiometric Yb lattice without suffering from concentration quenching. We also demonstrate their potential application in an S-band waveguide amplifier and record a maximum optical gain of 18 dB at 1464 nm. Our findings provide valuable insights into the fundamental understanding of deactivation-controlled luminescence enhancement and open up a new avenue toward the development of an S-band polymer waveguide amplifier with high gain.

Water-Resistant Subwavelength Perovskite Lasing from Transparent Silica-Based Nanocavity

Great research efforts are devoted to exploring the miniaturization of chip-scale coherent light sources possessing excellent lasing performance. Despite the indispensable role in Si photonics, SiO2 is generally considered not contributing to the starting up and operation of integrated lasers. Here, this work demonstrates an extraordinary-performance subwavelength-scale perovskite vertical cavity laser with all-transparent SiO2 cavity, whose cavity is ultra-simple and composed of only two parallel SiO2 plates. By introducing a ligand-assisted thermally co-evaporation strategy, highly luminescent perovskite film with high reproducibility and excellent optical gain is grown directly on SiO2 . Benefitting from their high-refractive-index contrast, low-threshold, high-quality factor, and single-mode lasing is achieved in subwavelength range of ≈120 nm, and verified by long-range coherence distance (115.6 µm) and high linear polarization degree (82%). More importantly, the subwavelength perovskite laser device could operate in water for 20 days without any observable degradation, exhibiting ultra-stable water-resistant performance. These findings would provide a simple but robust and reliable strategy for the miniaturized on-chip lasers compatible with Si photonics.

Nanoscatterer-Assisted Fluorescence Amplification Technique

Weak fluorescence signals, which are important in research and applications, are often masked by the background. Different amplification techniques are actively investigated. Here, a broadband, geometry-independent and flexible feedback scheme based on the random scattering of dielectric nanoparticles allows the amplification of a fluorescence signal by partial trapping of the radiation within the sample volume. Amplification of up to a factor of 40 is experimentally demonstrated in ultrapure water with dispersed TiO2 nanoparticles (30 to 50 nm in diameter) and fluorescein dye at 200 μmol concentration (pumped with 5 ns long, 3 mJ laser pulses at 490 nm). The measurements show a measurable reduction in linewidth at the emission peak, indicating that feedback-induced stimulated emission contributes to the large gain observed.

Aggregation-Induced Stimulated Emission of 100% Dye Microspheres

Dyes with aggregation-induced emission (AIE) properties have gained interests due to their bright luminescence in solid-state aggregates. While fluorescence from AIE dyes have been widely exploited, relatively little is known about aggregation-induced stimulated emission. Here, we investigated stimulated emission of tetraphenylethene (TPE)-based organoboron AIE dyes, TPEQBN, in thin films and in microcavity lasers. Using femtosecond pump-probe spectroscopy, gain coefficients up to 230 cm-1 at 500 nm were measured. Using rate equations, we analyzed concentration- and pump-dependent gain dynamics as well as laser build up dynamics. During laser oscillation, radiative stimulated emission allows high instantaneous quantum yield greater than 90% to be achieved. We fabricated solid-state microspheres made of 100% AIE dyes via microfluidic emulsion and solvent evaporation method. Coupled with high gain and high refractive index of 1.76, microspheres as small as 2 μm in diameter showed lasing by nanosecond pumping with a threshold of ~10 pJ μm-2. Polymer coated, but not bare, microspheres were internalized by live cells and generated narrowband cavity mode emission from within the cytoplasm. Our work shows the potential of AIE dyes as laser materials.

Broadband Tunable Optical Gain from Ecofriendly Semiconductor Quantum Dots with Near-Half-Exciton Threshold

Optical gain in solution-processable quantum dots (QDs) has attracted intense interest toward next-generation optoelectronics; however, the development of optical gain in heavy-metal-free QDs remains challenging. Herein, we reveal that the ZnSe_1-xTe_x-based QDs show excellent optical gain covering the violet to near-red regime. A new gain mechanism is established in the alloy QDs, which promotes a theoretically threshold-less optical gain thanks to the ultrafast carrier localization and suppression of ground-state absorption by the Te-derived isoelectronic state. Further, we disclose that the hot-carrier trapping represents the main culprit to exacerbate the gain performance. With the increase of Te-to-Se ratio, a sub-band-gap photoinduced absorption (PA) appears and extinguishes the optical gain. To overcome this issue, we modulate the inner ZnSe shell thickness, and the gain is recovered by reducing the overlap between the gain and PA regions in the Te-rich QDs. Our finding represents a significant step toward sustainable QD-based optoelectronics.

Colloidal CdSe/CdS Core/Crown Nanoplatelets for Efficient Blue Light Emission and Optical Amplification

The application of CdSe nanoplatelets (NPLs) in the ultraviolet/blue region remains an open challenge due to charge trapping typically leading to limited photoluminescence quantum efficiency (PL QE) and sub-bandgap emission in core-only NPLs. Here, we synthesized 3.5 monolayer core/crown CdSe/CdS NPLs with various crown dimensions, exhibiting saturated blue emission and PL QE up to 55%. Compared to core-only NPLs, the PL intensity decays monoexponentially over two decades due to suppressed deep trapping and delayed emission. In both core-only and core/crown NPLs we observe biexciton-mediated optical gain between 470 and 510 nm, with material gain coefficients up to 7900 cm^-1 and consistently lower gain thresholds in crowned NPLs. Gain lifetimes are limited to 40 ps, due to residual ultrafast trapping and higher exciton densities at threshold. Our results provide guidelines for rational optimization of thin CdSe NPLs toward lighting and light-amplification applications.

Transport layer engineering towards lower threshold for perovskite lasers

Charge transport layers are essential for achieving electrically pumped perovskite lasers. However, their role in perovskite lasing is not fully understood. Here, we explore the role of charge transport layers on the lasing actions of perovskite films by investigating the amplified spontaneous emission (ASE) thresholds. We demonstrate a largely reduced ASE threshold and enhanced ASE intensity by introducing an additional hole transport layer poly(triaryl amine) (PTAA). We show that the key role of the PTAA layer is to accelerate the hot carrier cooling process by extracting holes in perovskites. With reduced hot holes, the Auger recombination loss is largely suppressed, resulting in decreased ASE threshold. Our argument is further supported by the fact that the ASE threshold can be further reduced from 25.7 to 7.2 μJ/cm² upon switching the pumping wavelength from 400 nm to 500 nm to directly avoid excess hot hole generation. Our work for the first time exemplifies how to further reduce the ASE threshold with transport layer engineering through hot hole manipulation. This is critical to maintaining the excellent gain properties of perovskites when integrating them into electrical devices, paving the way for electrically pumped perovskite lasers. This article is protected by copyright. All rights reserved.

Amplified Spontaneous Emission and Lasing from Zn-Processed AgIn5S8 Core/Shell Quantum Dots

I-III-VI ternary quantum dots (QDs) have emerged as favorable alternatives to the toxic II-VI QDs for optoelectronic and biological applications. However, their use as optical gain media for microlasers is still limited by a low fluorescence efficiency. Here, we demonstrate amplified spontaneous emission (ASE) and lasing from colloidal QDs of Zn-processed AgIn₅S₈ (AIS) for the first time. The passivation treatment on the AIS QDs yields a 3.4-fold enhancement of fluorescence quantum efficiency and a 30% increase in the two-photon absorption cross section. ASE is achieved from the AIS/ZnS core/shell QD films under both one- and two-photon pumping with a threshold fluence of ∼84.5 μJ/cm² and 3.1 mJ/cm², respectively. These thresholds are comparable to the best optical gain performance of Cd based-QDs reported in the literature. Moreover, we demonstrate a facile whispering-gallery-mode microlaser of the core/shell QDs with a lasing threshold of ∼233 μJ/cm². The passivated AIS QDs can be promising optical gain media for photonic applications.

High-Gain of NdIII Complex Doped Optical Waveguide Amplifiers at 1.06 and 1.31 µm Wavelengths Based on Intramolecular Energy Transfer Mechanism

Chelate phosphine oxide ligand (9,9-dimethyl-9H-xanthene-4,5-diyl) bis (diphenylphosphineoxide) (XPO) is prepared as a neutral ligand to synthesize complex Nd (TTA)₃ (XPO) (TTA = 2-thenoyltrifluoroacetone). An appropriate energy gap between the XPO and TTA ligands, which can support two additional energy transfer routines from the first excited triplet state (T₁ ) energy level of the XPO to that of the TTA, improves energy transfer in the Nd complex. Based on intramolecular energy transfer mechanism, optical gains at 1.06 and 1.31 µm are demonstrated in Nd (TTA)₃ (XPO)-doped polymer waveguides with the excitation of low-power light-emitting diodes (LEDs) instead of semiconductor lasers as pump sources. Using the vertical top-pumping mode of a 365 nm LED, relative gains of 22.5 and 8.4 dB cm^-1 are obtained at 1.06 and 1.31 µm, respectively, in a 0.2 cm long embedded waveguide with a cross-section of 8 × 5 µm² . The active core layer is Nd (TTA)₃ (XPO)-doped SU-8 polymer. Moreover, relative gains are achieved in evanescent-field waveguide with a cross-section of 6 × 4 µm² . The 21.0 and 5.6 dB cm^-1 relative gains are achieved at 1.06 and 1.31 µm, respectively, with a net gain of 13.8 ± 0.3 dB cm^-1 obtained at 1.06 µm in a 0.9 cm long SU-8 waveguide with Nd (TTA)₃ (XPO)-doped polymethylmethacrylate as upper cladding.

An NIR-Driven Upconversion/C3N4/CoP Photocatalyst for Efficient Hydrogen Production by Inhibiting Electron-Hole Pair Recombination for Alzheimer's Disease Therapy

Redox imbalance and abnormal amyloid protein (Aβ) buildup are key factors in the etiology of Alzheimer's disease (AD). As an antioxidant, the hydrogen molecule (H₂) has the potential to cure AD by specifically scavenging highly harmful reactive oxygen species (ROS) such as ^•OH. However, due to the low solubility of H₂ (1.6 ppm), the traditional H₂ administration pathway cannot easily achieve long-term and effective accumulation of H₂ in the foci. Therefore, how to achieve the continuous release of H₂ in situ is the key to improve the therapeutic effect on AD. As a corollary, we designed a rare earth ion doped g-C₃N₄ upconversion photocatalyst, which can respond to NIR and realize the continuous production of H₂ by photocatalytic decomposition of H₂O in biological tissue, which avoids the problem of the poor penetration of visible light. The introduction of CoP cocatalyst accelerates the separation and transfer of photogenerated electrons in g-C₃N₄, thus improving the photocatalytic activity of hydrogen evolution reaction. The morphology of the composite photocatalyst was shown by transmission electron microscopy, and the crystal structure was studied by X-ray diffractometry and Raman analysis. In addition, the ability of g-C₃N₄ to chelate metal ions and the photothermal properties of CoP can inhibit Aβ and reduce the deposition of Aβ in the brain. Efficient in situ hydrogen production therapy combined with multitarget synergism solves the problem of a poor therapeutic effect of a single target. In vivo studies have shown that UCNP@CoP@g-C₃N₄ can reduce Aβ deposition, improve memory impairment, and reduce neuroinflammation in AD mice.

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

HgCdTe-based heterostructures with quantum wells (QWs) are a promising material for semiconductor lasers in the atmospheric transparency window (3-5 μm) thanks to the possibility of suppressing Auger recombination due to the no-parabolic law of carrier dispersion. In this work, we analyze the thresholds of stimulated emission (SE) under optical pumping from heterostructures with a different number of QWs in the active region of the structure. Total losses in structures are determined from the comparison of thresholds for the different number of QWs in the active region. It is shown that, thanks to the increased modal gain, a higher number of QWs results in lower threshold pumping intensity and, consequently, higher temperature of SE. These results indicate that improvements to the modal gain can result in a moderate uplift in the temperature of SE from mid-infrared HgCdTe-based heterostructures. On the other hand, at a high enough QW count threshold, the intensity no longer depends on the number of the QWs and is determined by the transparency concentration of a single QW.

Excitonic Mechanisms of Stimulated Emission in Low-Threshold ZnO Microrod Lasers with Whispering Gallery Modes

Whispering gallery mode (WGM) ZnO microlasers gain attention due to their high Q-factors and ability to provide low-threshold near-UV lasing. However, a detailed understanding of the optical gain mechanisms in such structures has not yet been achieved. In this work, we study the mechanisms of stimulated emission (SE) in hexagonal ZnO microrods, demonstrating high-performance WGM lasing with thresholds down to 10-20 kW/cm² and Q-factors up to ~3500. The observed SE with a maximum in the range of 3.11-3.17 eV at room temperature exhibits a characteristic redshift upon increasing photoexcitation intensity, which is often attributed to direct recombination in the inverted electron-hole plasma (EHP). We show that the main contribution to room-temperature SE in the microrods studied, at least for near-threshold excitation intensities, is made by inelastic exciton-electron scattering rather than EHP. The shape and perfection of crystals play an important role in the excitation of this emission. At lower temperatures, two competing gain mechanisms take place: exciton-electron scattering and two-phonon assisted exciton recombination. The latter forms emission with a maximum in the region near ~3.17 eV at room temperature without a significant spectral shift, which was observed only from weakly faceted ZnO microcrystals in this study.

Facet Engineering for Amplified Spontaneous Emission in Metal Halide Perovskite Nanocrystals

Auger recombination and thermalization time are detrimental in reducing the gain threshold of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic devices. Here, we report the design strategy of facet engineering to reduce the gain threshold of amplified spontaneous emission by manyfold in NCs of the same concentration and edge length. We achieved this hallmark result by controlling the Auger recombination rates dominated by processes involving NC volume and thermalization time to the emitting states by optimizing the number of facets from 6 (cube) to 12 (rhombic dodecahedron) and 26 (rhombicuboctahedrons) in CsPbBr₃ NCs. For instance, we demonstrate a 2-fold reduction in Auger recombination rates and thermalization time with increased number of facets. The gain threshold can be further reduced ∼50% by decreasing the sample temperature to 4 K. Our systematic studies offer a new method to reduce the gain threshold that ultimately forms the basis of nanolasers.

Zero-Threshold Optical Gain in Electrochemically Doped Nanoplatelets and the Physics Behind It

Colloidal nanoplatelets (NPLs) are promising materials for lasing applications. The properties are usually discussed in the framework of 2D materials, where strong excitonic effects dominate the optical properties near the band edge. At the same time, NPLs have finite lateral dimensions such that NPLs are not true extended 2D structures. Here we study the photophysics and gain properties of CdSe/CdS/ZnS core-shell-shell NPLs upon electrochemical n doping and optical excitation. Steady-state absorption and PL spectroscopy show that excitonic effects are weaker in core-shell-shell nanoplatelets due to the decreased exciton binding energy. Transient absorption studies reveal a gain threshold of only one excitation per nanoplatelet. Using electrochemical n doping, we observe the complete bleaching of the band edge exciton transitions. Combining electrochemical doping with transient absorption spectroscopy, we demonstrate that the gain threshold is fully removed over a broad spectral range and gain coefficients of several thousand cm^-1 are obtained. These doped NPLs are the best performing colloidal nanomaterial gain medium reported to date, with the lowest gain threshold and broadest gain spectrum and gain coefficients that are 4 times higher than in n-doped colloidal quantum dots. The low exciton binding energy due to the CdS and ZnS shells, in combination with the relatively small lateral size of the NPLs, results in excited states that are effectively delocalized over the entire platelet. Core-shell NPLs are thus on the border between strong confinement in QDs and dominant Coulombic effects in 2D materials. We demonstrate that this limit is in effect ideal for optical gain and that it results in an optimal lateral size of the platelets where the gain threshold per nm² is minimal.

Enhanced Amplified Spontaneous Emission in Quasi-2D Perovskite by Facilitating Energy Transfer

Despite the superior optoelectronic properties of quasi-two-dimensional (quasi-2D) Ruddlesden-Popper halide perovskites, the inhomogeneous distribution of mixed phases result in inefficient energy transfer and multiple emission peaks. Herein, the insufficient energy funneling process at the high-energy phase is almost completely suppressed and the excitonic understanding of gain nature is studied in the energy funneling managed quasi-2D perovskite via introducing poly(vinyl pyrrolidone) (PVP) additive. The energy transfer process is facilitated from 0.37 to 0.26 ps after introducing the PVP additive, accelerating the exciton accumulation in the emissive state, and increasing the ratio of the high-dimensional phase for enhancing radiative emission. The gain lifetime is promoted to be as fast as 28 ps to outcompete nonradiative recombination during the build-up of population inversion. Simultaneously, the net gain coefficient is increased by more than twofold that of the pristine perovskite film. Owing to the remarkable gain properties, room-temperature amplified spontaneous emission is realized with a low threshold of 11.3 μJ/cm2, 4 times lower than 43 μJ/cm2 of the pristine film. Our findings suggest that the PVP-treated quasi-2D perovskite shows great promise for high-performance laser devices.

Net Optical Gain Coefficients of Cu+ and Tm3+ Single-Doped and Co-Doped Germanate Glasses

Broadband tunable solid-state lasers continue to present challenges to scientists today. The gain medium is significant for realizing broadband tunable solid-state lasers. In this investigation, the optical gain performance for Tm³⁺ and Cu⁺ single-doped and co-doped germanate glasses with broadband emissions was studied via an amplified spontaneous emission (ASE) technique. It was found that the net optical gain coefficients (NOGCs) of Tm³⁺ single-doped glass were larger than those for Cu⁺ single-doped glass. When Tm³⁺ was introduced, the emission broadband width of Cu⁺-doped glass was effectively extended. Moreover, it was found that for the co-doped glass the NOGCs at the wavelengths for Tm³⁺ and Cu⁺ emissions were larger than those of Tm³⁺ and Cu⁺ single-doped glasses at the same wavelengths. In addition, the NOGC values of Tm³⁺ and Cu⁺ co-doped germanate glasses were of the same order of magnitude, and were maintained in a stable range at different wavelengths. These results indicate that the Tm³⁺ and Cu⁺ co-doped glasses studied may be a good candidate medium for broadband tunable solid-state lasers.

Evaluating Lead Halide Perovskite Nanocrystals as a Spin Laser Gain Medium

Spin-polarized charge endows conventional lasers with not only new functionalities but also reduced lasing thresholds thanks to the lifting of spin degeneracy. II-VI and III-V semiconductors have been extensively investigated as spin laser gain mediums; however, the degree of polarization is limited by the light hole and heavy hole degeneracy. Herein, we evaluate the potential of CsPbBr₃ nanocrystals─ones that are featured with low band-edge degeneracy and therefore a high degree of polarization as a result of inverted band structure and large spin-orbit coupling─as a gain medium for spin lasers. Our experiment and numerical modeling results reveal that, within the spin relaxation lifetime, the optical gain threshold can be depressed by polarizing the charge using circularly polarized photoexcitation. However, prolonging the spin relaxation lifetime is required to realize a spin laser.

Towards Interband Cascade lasers on InP Substrate

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials and devices with high structural and optical quality, when compared to standard approaches of growing ICLs on GaSb or InAs substrates. Therefore, we theoretically investigate a family of type II, "W"-shaped quantum wells made of InGaAs/InAs/GaAsSb with different barriers, for a range of compositions assuring the strain levels acceptable from the growth point of view. The calculated band structure within the 8-band k·p approximation showed that the inclusion of a thin InAs layer into such a type II system brings a useful additional tuning knob to tailor the electronic confined states, optical transitions' energy and their intensity. Eventually, it allows achieving the emission wavelengths from below 3 to at least 4.6 μm, while still keeping reasonably high gain when compared to the state-of-the-art ICLs. We demonstrate a good tunability of both the emission wavelength and the optical transitions' oscillator strength, which are competitive with other approaches in the MIR. This is an original solution which has not been demonstrated so far experimentally. Such InP-based interband cascade lasers are of crucial application importance, particularly for the optical gas sensing.

Polarization Angle Dependence of Optical Gain in a Hybrid Structure of Alexa-Flour 488/M13 Bacteriophage

We measured optical modal gain of a dye–virus hybrid structure using a variable stripe length method, where Alexa-fluor-488 dye was coated on a virus assembly of M13 bacteriophage. Inspired by the structural periodicity of the wrinkle-like virus assembly, the edge emission of amplified spontaneous emission was measured for increasing excited optical stripe length, which was aligned to be either parallel or perpendicular to the wrinkle alignment. We found that the edge emission showed a strong optical anisotropy, and a spectral etalon also appeared in the gain spectrum. These results can be attributed to the corrugated structure, which causes a similar effect to a DFB laser, and we also estimated effective cavity lengths.

Optical-Gain-based Sensing Using Inorganic-Ligand-Passivated Colloidal Quantum Dots

Thanks to their extremely large surface-to-volume ratio, colloidal quantum dots are potential high-performance sensing materials. However, previous sensing works using their spontaneous emission suffer from low sensitivities. The absence of an amplification process and the presence of the steric hindrance of long-chain organic ligands are two possible causations. Herein we propose that these two issues can be circumvented by using the amplified spontaneous emission of colloidal quantum dots capped by short-chain inorganic ligands. To exemplify this concept, we performed humidity sensing and observed a ∼31 times enhancement in sensitivity. Meanwhile, we found that the amplified spontaneous emission threshold power was reduced by 34% in a high humidity environment. On the basis of our transient absorption measurements, we attribute these observations to the mitigation of ultrafast subpicosecond trapping processes, which are enabled by the absorption of water molecules.

Electrical Switching of Optical Gain in Perovskite Semiconductor Nanocrystals

Perovskite semiconductor nanocrystals are promising for optical amplification and laser applications benefiting from efficient optical gain generation. Nevertheless, the pump threshold is limited by more than one exciton per nanocrystal required to generate population inversion in neutral nanocrystals due to the level degeneracy. Here, we show that by charging nanocrystals with current injection, the level degeneracy can be lifted to generate charged exciton gain with markedly low excitation density. On the basis of the scenario, we have demonstrated electrical switching of amplified spontaneous emission in films of CsPbBr₃ nanocrystals sandwiched by two electrodes with over 50% threshold reduction owing to charged excitons. Our work provides an effective approach to electrically modulated optical gain in colloidal perovskite nanocrystals for potential applications in advanced laser and information technology.

Subwavelength-Polarized Quasi-Two-Dimensional Perovskite Single-Mode Nanolaser

When approaching the subwavelength or deep subwavelength scale, there is a fundamental trade-off between the ultimate shrinking size and the performance for miniaturized lasers. Herein, to overcome this trade-off, we investigated the excitonic gain nature of quasi-two-dimensional (quasi-2D) perovskites and revealed that both singlet excitons and polarons would make nearly the entire contribution within ∼50 ps to a high net gain of 558 cm^-1. Inspired by the gain characteristic, we successfully shrank the quasi-2D perovskites laser to the subwavelength scale using only a layer of ultraviolet glue and a glass substrate in the vertical dimension. In spite of the compact and simple cavity structure, single-mode lasing with a highly linear polarization degree of 81% and a quality factor of 1635 was achieved. The extremely short cavity, excellent lasing performance, and simple structure of the quasi-2D perovskite laser are expected to provide insights into next-generation integrated laser sources.

Halide Perovskite Semiconductor Lasers: Materials, Cavity Design, and Low Threshold

Solution-processable semiconductor lasers have been a long-standing challenge for next-generation displays, light sources, and communication technologies. Metal halide perovskites, which combine the advantages of inorganic and organic semiconductors, have recently emerged not only as excellent candidates for solution-processable lasers but also as potential complementary gain materials for filling the "green gap" and supplement industrial nanolasers based on classic II-VI/III-V semiconductors. Numerous perovskite lasers have been developed successfully with superior performance in terms of cost-effectiveness, low threshold, high coherence, and multicolor tunability. This mini review surveys the development, current status, and perspectives of perovskite lasers, categorized into thin film lasers, nanocrystals lasers, microlasers, and device concepts including polariton and bound-in-continuum lasers with a focus on material fundamentals, cavity design, and low-threshold devices in addition to critical issues such as mass fabrication and applications.

Interband Cascade Active Region with Ultra-Broad Gain in the Mid-Infrared Range

The optical gain spectrum has been investigated theoretically for various designs of active region based on InAs/GaInSb quantum wells—i.e., a type II material system employable in interband cascade lasers (ICLs) or optical amplifiers operating in the mid-infrared spectral range. The electronic properties and optical responses have been calculated using the eight-band k·p theory, including strain and external electric fields, to simulate the realistic conditions occurring in operational devices. The results show that intentionally introducing a slight nonuniformity between two subsequent stages of a cascaded device via the properly engineered modification of the type II quantum wells of the active area offers the possibility to significantly broaden the gain function. A −3 dB gain width of 1 µm can be reached in the 3–5 µm range, which is almost an order of magnitude larger than that of any previously reported ICLs. This is a property strongly demanded in many gas-sensing or free-space communication applications, and it opens a way for a new generation of devices in the mid-infrared range, such as broadly tunable single-mode lasers, mode-locked lasers for laser-based spectrometers, and optical amplifiers or superluminescent diodes which do not exist beyond 3 µm yet.

Quantitative Electrochemical Control over Optical Gain in Quantum-Dot Solids

Solution-processed quantum dot (QD) lasers are one of the holy grails of nanoscience. They are not yet commercialized because the lasing threshold is too high: one needs >1 exciton per QD, which is difficult to achieve because of fast nonradiative Auger recombination. The threshold can, however, be reduced by electronic doping of the QDs, which decreases the absorption near the band-edge, such that the stimulated emission (SE) can easily outcompete absorption. Here, we show that by electrochemically doping films of CdSe/CdS/ZnS QDs, we achieve quantitative control over the gain threshold. We obtain stable and reversible doping of more than two electrons per QD. We quantify the gain threshold and the charge carrier dynamics using ultrafast spectroelectrochemistry and achieve quantitative agreement between experiments and theory, including a vanishingly low gain threshold for doubly doped QDs. Over a range of wavelengths with appreciable gain coefficients, the gain thresholds reach record-low values of ∼1 × 10-5 excitons per QD. These results demonstrate a high level of control over the gain threshold in doped QD solids, opening a new route for the creation of cheap, solution-processable, low-threshold QD lasers.

Optical Gain in Ultrathin Self-Assembled Bi-Layers of Colloidal Quantum Wells Enabled by the Mode Confinement in their High-Index Dielectric Waveguides

This study demonstrates an ultra-thin colloidal gain medium consisting of bi-layers of colloidal quantum wells (CQWs) with a total film thickness of 14 nm integrated with high-index dielectrics. To achieve optical gain from such an ultra-thin nanocrystal film, hybrid waveguide structures partly composed of self-assembled layers of CQWs and partly high-index dielectric material are developed and shown: in asymmetric waveguide architecture employing one thin film of dielectric underneath CQWs and in the case of quasi-symmetric waveguide with a pair of dielectric films sandwiching CQWs. Numerical modeling indicates that the modal confinement factor of ultra-thin CQW films is enhanced in the presence of the adjacent dielectric layers significantly. The active slabs of these CQW monolayers in the proposed waveguide structure are constructed with great care to obtain near-unity surface coverage, which increases the density of active particles, and to reduce the surface roughness to sub-nm scale, which decreases the scattering losses. The excitation and propagation of amplified spontaneous emission (ASE) along these active waveguides are experimentally demonstrated and numerically analyzed. The findings of this work offer possibilities for the realization of ultra-thin electrically driven colloidal laser devices, providing critical advantages including single-mode lasing and high electrical conduction.

Thickness-Tunable Self-Assembled Colloidal Nanoplatelet Films Enable Ultrathin Optical Gain Media

We propose and demonstrate construction of highly uniform, multilayered superstructures of CdSe/CdZnS core/shell colloidal nanoplatelets (NPLs) using liquid interface self-assembly. These NPLs are sequentially deposited onto a solid substrate into slabs having monolayer-precise thickness across tens of cm² areas. Because of near-unity surface coverage and excellent uniformity, amplified spontaneous emission (ASE) is observed from an uncharacteristically thin film having 6 NPL layers, corresponding to a mere 42 nm thickness. Furthermore, systematic studies on optical gain of these NPL superstructures having thicknesses ranging from 6 to 15 layers revealed the gradual reduction in gain threshold with increasing number of layers, along with a continuous spectral shift of the ASE peak (∼18 nm). These observations can be explained by the change in the optical mode confinement factor with the NPL waveguide thickness and propagation wavelength. This bottom-up construction technique for thickness-tunable, three-dimensional NPL superstructures can be used for large-area device fabrication.

Determination of the Best Empiric Method to Quantify the Amplified Spontaneous Emission Threshold in Polymeric Active Waveguides

Amplified Spontaneous Emission (ASE) threshold represents a crucial parameter often used to establish if a material is a good candidate for applications to lasers. Even if the ASE properties of conjugated polymers have been widely investigated, the specific literature is characterized by several methods to determine the ASE threshold, making comparison among the obtained values impossible. We quantitatively compare 9 different methods employed in literature to determine the ASE threshold, in order to find out the best candidate to determine the most accurate estimate of it. The experiment has been performed on thin films of an homopolymer, a copolymer and a host:guest polymer blend, namely poly(9,9-dioctylfluorene) (PFO), poly(9,9-dioctylfluorene-cobenzothiadiazole) (F8BT) and F8BT:poly(3- hexylthiophene) (F8BT:rrP3HT), applying the Variable Pump Intensity (VPI) and the Variable Stripe Length (VSL) methods. We demonstrate that, among all the spectral features affected by the presence of ASE, the most sensitive is the spectral linewidth and that the best way to estimate the ASE threshold is to determine the excitation density at the beginning of the line narrowing. We also show that the methods most frequently used in literature always overestimate the threshold up to more than one order of magnitude.

Reduction of Optical Gain Threshold in CsPbI3 Nanocrystals Achieved by Generation of Asymmetric Hot-Biexcitons

Lead halide perovskite nanocrystals (NCs) are a class of promising light-emitting materials and have been considered as gain media in lasers. Strong exciton-exciton interactions in NCs cause an energy shift of the lowest optical transition and affect the optical gain threshold. Here, we clarify the dynamics of exciton-exciton interactions in highly photoexcited CsPbI₃ NCs by double-pump transient absorption spectroscopy. This method provides control over the population of each excited state by varying the time interval between the two pump pulses. We find that the band-edge energy shift induced by the formation of asymmetric hot-biexcitons (comprising one ground-state exciton and one hot exciton) is smaller than that induced by hot excitons and hot biexcitons in the ensemble. We demonstrate that the generation of asymmetric hot-biexcitons reduces the optical gain threshold in the CsPbI₃ NC ensemble.

Colloidal CdSe Quantum Wells with Graded Shell Composition for Low-Threshold Amplified Spontaneous Emission and Highly Efficient Electroluminescence

Semiconductor nanoplatelets (NPLs) have emerged as a very promising class of colloidal nanocrystals for light-emitting devices owing to their quantum-well-like electronic and optical characteristics. However, their lower photoluminescence quantum yield (PLQY) and limited stability have hampered the realization of their outstanding luminescent properties in device applications. Here, to address these deficiencies, we present a two-step synthetic approach that enables the synthesis of core/shell NPLs with precisely controlled shell composition for engineering their excitonic properties. The proposed CdSe colloidal quantum wells possess a graded shell, which is composed of a CdS buffer layer and a Cd_xZn_1-xS gradient layer, and exhibit bright emission (PLQY 75-89%) in the red spectral region (634-648 nm) with a narrow emission line width (21 nm). These enhanced optical properties allowed us to attain low thresholds for amplified spontaneous emission (down to ∼40 μJ/cm²) under nanosecond laser excitation. We also studied the electroluminescent performance of these NPLs by fabricating solution-processed light-emitting diodes (LEDs). In comparison to NPL-LEDs with CdSe/CdS core/shell NPLs, which exhibit an external quantum efficiency (EQE) value of only 1.80%, a significantly improved EQE value of 9.92% was obtained using graded-shell NPLs, the highest value for colloidal NPL-based-LEDs. In addition, the low efficiency roll-off characteristics of NPL-LEDs enabled a high brightness of up to ∼46 000 cd/m² with an electroluminescence peak centered at 650 nm. These findings demonstrate the paramount role that heterostructure engineering occupies in enhancing the optoelectronic characteristics of semiconductor NPLs toward practically relevant levels.

Deep Blue Light Amplification from a Novel Triphenylamine Functionalized Fluorene Thin Film

The development of high performance optically pumped organic lasers operating in the deep blue still remains a big challenge. In this paper, we have investigated the photophysics and the optical gain characteristics of a novel fluorene oligomer functionalized by four triphenylamine (TPA) groups. By ultrafast spectroscopy we found a large gain spectral region from 420 to 500 nm with a maximum gain cross-section of 1.5 × 10⁻¹⁶ cm² which makes this molecule a good candidate for photonic applications. Amplified Spontaneous Emission measurements (ASE) under 150 fs and 3 ns pump pulses have revealed a narrow emission at 450 nm with a threshold of 5.5 μJcm⁻² and 21 μJcm⁻² respectively. Our results evidence that this new fluorene molecule is an interesting material for photonic applications, indeed the inclusion of TPA as a lateral substituent leads to a high gain and consequently to a low threshold blue organic ASE.

High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating

High-performance photodetectors operating in the near-infrared (0.75-1.4 μm) and short-wave infrared (1.4-3.0 μm) portion of the electromagnetic spectrum are key components in many optical systems. Here, we report on a combined experimental and theoretical study of square millimeter array infrared photodetectors comprising 3 million n⁺-i-n⁺ InP nanowires grown by MOVPE from periodically ordered Au seed particles. The nominal i-segment, comprising 20 InAs_0.40P_0.60 quantum discs, was grown by use of an optimized Zn doping to compensate the nonintentional n-doping. The photodetectors exhibit bias- and power-dependent responsivities reaching record-high values of 250 A/W at 980 nm/20 nW and 990 A/W at 532 nm/60 nW, both at 3.5 V bias. Moreover, due to the embedded quantum discs, the photoresponse covers a broad spectral range from about 0.70 to 2.5 eV, in effect outperforming conventional single InGaAs detectors and dual Si/Ge detectors. The high responsivity, and related gain, results from a novel proposed photogating mechanism, induced by the complex charge carrier dynamics involving optical excitation and recombination in the quantum discs and interface traps, which reduces the electron transport barrier between the highly doped n⁺ contact and the i-segment. The experimental results obtained are in perfect agreement with the proposed theoretical model and represent a significant step forward toward understanding gain in nanoscale photodetectors and realization of commercially viable broadband photon detectors with ultrahigh gain.

Impact of Ag2O Content on the Optical and Spectroscopic Properties of Fluoro-Phosphate Glasses

Glasses with the system (84.60-x) NaPO₃-5 ZnO-(9.40-x) NaF-x Ag₂O-1 Er₂O₃, (x = 0, 2, 4, and 6) (mol%) were synthesized by the conventional melt-quenching method. The impact of the addition of Ag₂O on the physical, thermal, structural, and optical properties of the glasses is discussed. The Judd-Oflet analysis was used to evaluate the radiative properties of the emission transitions of the glasses. The enhancement of luminescence properties due to Ag₂O is discussed in terms of consequent changes in the local electromagnetic field, symmetry, and the ligand field around the Er³⁺ ion. The heat treatment of the glass was performed in order to precipitate Ag nanoparticles (NPs), which form as a layer at the surface of the heat-treated glasses as confirmed using scanning electron microscopy (SEM). The Ag NPs were found to increase the intensity of the emission at 1.5 µm.

Giant Alloyed Hot Injection Shells Enable Ultralow Optical Gain Threshold in Colloidal Quantum Wells

As an attractive materials system for high-performance optoelectronics, colloidal nanoplatelets (NPLs) benefit from atomic-level precision in thickness, minimizing emission inhomogeneous broadening. Much progress has been made to enhance their photoluminescence quantum yield (PLQY) and photostability. However, to date, layer-by-layer growth of shells at room temperature has resulted in defects that limit PLQY and thus curtail the performance of NPLs as an optical gain medium. Here, we introduce a hot-injection method growing giant alloyed shells using an approach that reduces core/shell lattice mismatch and suppresses Auger recombination. Near-unity PLQY is achieved with a narrow full-width-at-half-maximum (20 nm), accompanied by emission tunability (from 610 to 650 nm). The biexciton lifetime exceeds 1 ns, an order of magnitude longer than in conventional colloidal quantum dots (CQDs). Reduced Auger recombination enables record-low amplified spontaneous emission threshold of 2.4 μJ cm^-2 under one-photon pumping. This is lower by a factor of 2.5 than the best previously reported value in nanocrystals (6 μJ cm^-2 for CdSe/CdS NPLs). Here, we also report single-mode lasing operation with a 0.55 mJ cm^-2 threshold under two-photoexcitation, which is also the best among nanocrystals (compared to 0.76 mJ cm^-2 from CdSe/CdS CQDs in the Fabry-Pérot cavity). These findings indicate that hot-injection growth of thick alloyed shells makes ultrahigh performance NPLs.

Temperature-Induced Self-Compensating Defect Traps and Gain Thresholds in Colloidal Quantum Dots

Continuous-wave (CW) lasing was recently achieved in colloidal quantum dots (CQDs) by lowering the threshold through the introduction of biaxial strain. However, the CW laser threshold is still much higher than the femtosecond threshold. This must be addressed before electrically injected lasing can be realized. Here we investigate the relationship between threshold and temperature and find a subpicosecond recombination process that proceeds very efficiently at temperatures reached during CW excitation. We combine density functional theory and molecular dynamics simulations to explore potential candidates for such a process, and find that crystal defects having thermally vibrating energy levels can become electronic traps-i.e., they can protrude into the bandgap-when they are sufficiently distorted at higher temperatures. We find that biaxially strained CQDs, which have a lower femtosecond laser threshold than traditional CQDs, result in less heat for a given transparency/gain level and thus undergo this trapping to a lower extent. We also propose methods to tailor CQDs to avoid self-compensating defect traps.

Random Lasing Engineering in Poly-(9-9dioctylfluorene) Active Waveguides Deposited on Wrinkles Corrugated Surfaces

This paper investigates the correlation between the random lasing properties of organic waveguides made by poly-(9-9dioctylfluorene) (PFO) thin films and the morphology of wrinkled corrugated substrates. The capability to individually control the wrinkle wavelength, shape, and height allows us to separately investigate their role on the sample emission properties. We demonstrate that the main parameter determining the presence of coherent random lasing is the substrate roughness and that, contrary to what could be qualitatively expected, as the roughness increases, coherent random lasing is progressively reduced. Coherent random lasing is observed only for a substrate roughness below 33 nm, while higher roughness leads to amplified spontaneous emission (up to 70 nm) or to the absence of light amplification in the film (above 70 nm). We demonstrate that this result is due to a progressive reduction of the light amplification efficiency in the PFO film, evidencing that coherent random lasing can be obtained only with a right interplay between light amplification and scattering. Besides clarifying the basic aspects of random lasing in organic waveguides, our work opens the way to the realization of organic random lasers with predictable emission properties, thanks to the high control level of the scattering properties of the wrinkled corrugated surfaces.

Highly Stable, Near-Unity Efficiency Atomically Flat Semiconductor Nanocrystals of CdSe/ZnS Hetero-Nanoplatelets Enabled by ZnS-Shell Hot-Injection Growth

Colloidal semiconductor nanoplatelets (NPLs) offer important benefits in nanocrystal optoelectronics with their unique excitonic properties. For NPLs, colloidal atomic layer deposition (c-ALD) provides the ability to produce their core/shell heterostructures. However, as c-ALD takes place at room temperature, this technique allows for only limited stability and low quantum yield. Here, highly stable, near-unity efficiency CdSe/ZnS NPLs are shown using hot-injection (HI) shell growth performed at 573 K, enabling routinely reproducible quantum yields up to 98%. These CdSe/ZnS HI-shell hetero-NPLs fully recover their initial photoluminescence (PL) intensity in solution after a heating cycle from 300 to 525 K under inert gas atmosphere, and their solid films exhibit 100% recovery of their initial PL intensity after a heating cycle up to 400 K under ambient atmosphere, by far outperforming the control group of c-ALD shell-coated CdSe/ZnS NPLs, which can sustain only 20% of their PL. In optical gain measurements, these core/HI-shell NPLs exhibit ultralow gain thresholds reaching ≈7 µJ cm^-2 . Despite being annealed at 500 K, these ZnS-HI-shell NPLs possess low gain thresholds as small as 25 µJ cm^-2 . These findings indicate that the proposed 573 K HI-shell-grown CdSe/ZnS NPLs hold great promise for extraordinarily high performance in nanocrystal optoelectronics.

Giant Modal Gain Coefficients in Colloidal II-VI Nanoplatelets

Modal gain coefficient is a key figure of merit for a laser material. Previously, net modal gain coefficients larger than a few thousand cm^-1 were achieved in II-VI and III-V semiconductor gain media, but this required operation at cryogenic temperatures. In this work, using pump-fluence-dependent variable-stripe-length measurements, we show that colloidal CdSe nanoplatelets enable giant modal gain coefficients at room temperature up to 6600 cm^-1 under pulsed optical excitation. Furthermore, we show that exceptional gain performance is common to the family of CdSe nanoplatelets, as shown by examining samples having different vertical thicknesses and lateral areas. Overall, colloidal II-VI nanoplatelets with superior optical gain properties are promising for a broad range of applications, including high-speed light amplification and loss compensation in plasmonic photonic circuits.

Prospects and Limitations of Transition Metal Dichalcogenide Laser Gain Materials

Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum efficiency. We provide results from microscopic gain calculations of highly excited TMD monolayers and specify requirements to achieve lasing with four commonly used TMD semiconductors. Our approach includes band-structure renormalizations due to excited carriers that trigger a direct-to-indirect band gap transition. As a consequence, we predict a rollover for the gain that limits the excitation regime where laser operation is possible. A parametrization of the peak gain is provided that is used in combination with a rate-equation theory to discuss consequences for experimentally accessible laser characteristics.

Spectral Analysis of the Amplified Spontaneous Emission in the Second Positive System of the N2 Molecule

The spectrum of the 0-0 band of the [Formula: see text] electronic transition of the N₂ molecule presents a considerable difference in its distribution of intensities, as a function of the wave number, when the emission spectrum by glow discharge is compared to an amplified spontaneous emission (ASE) regime spectrum, commonly known as the N₂ "laser". In the present paper, this particularity, due to gain of the transition, is analyzed from an experimental and theoretical point of view, and for the first time has its experimental and theoretical intensities fully compared. An experimental rotational spectrum is obtained for this transition and a model for the ASE intensities has been carried out in order to retrieve the experimental conditions. The theoretical calculations of the gain have been carried out through a model proposed by other authors, as explained in the article. For the comparison among the ASE experimental and theoretical intensities, the fast and slow relaxation approximations proposed have been used, being the first one that best reproduces the experimental spectrum. For the first time, the experimental and theoretical spectra are compared directly, allowing the precise determination of the vibrational coefficient of inversion and temperature, showing the possible problems arising from the approximation. A good agreement between experimental and theoretical results is observed showing the reasonable validity of the model for the gain.

Using Bulk-like Nanocrystals To Probe Intrinsic Optical Gain Characteristics of Inorganic Lead Halide Perovskites

Following the introduction of perovskites for photovoltaic solar energy conversion, the use of these materials as a general purpose optoelectronic material for displays, lighting, and lasing has been explored. However, while reports on stimulated emission and lasing by perovskites show great promise, a comprehensive quantification of their optical gain characteristics is lacking. Here, we measure gain coefficients, clarify the gain mechanism, and explore the gain dynamics of colloidal CsPbBr₃ nanocrystals by deploying a unique combination of broadband transient absorption and ultrafast fluorescence spectroscopy. Opposite from current literature, we show that optical gain in such nanocrystals is supported by stimulated emission from free carriers, and not from excitons or biexcitons. Importantly, we demonstrate that the concomitant gain coefficients and thresholds agree with literature results reported for perovksite thin films. Finally, we show that, even in the case of fully inorganic lead halide perovskites, a cooling bottleneck hampers the development of net stimulated emission at high excitation density. Based on these results, we propose that bulk-like colloidal nanocrystals in general offer a unique testbed to quantify optical gain of novel photonic materials and in particular for lead halide perovskites.

Stable, Ultralow Threshold Amplified Spontaneous Emission from CsPbBr3 Nanoparticles Exhibiting Trion Gain

Wet-chemically synthesized cesium lead halide nanoparticles have many attractive properties that make them promising as optical gain media, but generally suffer from poor stability under ambient conditions and an optical gain threshold that is widely believed to be dictated by the need for biexcitons. These conditions make it impractical for such particles to be utilized as gain media given the need to undergo repeated stimulated emission processes at above-threshold pump intensities over long periods of time. We demonstrate that the surface treatment of CsPbBr₃ nanoparticles with a mixture of PbBr₂, oleic acid, and oleylamine not only raises their fluorescence quantum yield to nearly unity and prolongs their stability in air from days to months, but it also dramatically increases their trion photoluminescence lifetime from ∼0.9 to ∼1.6 ns. Via a combination of time-resolved photoluminescence and transient absorption spectroscopy, we provide evidence for trion gain at sufficiently low pump intensities in which the likelihood of predominantly biexciton-based gain is small. We then show that, in line with theoretical prediction, the amplified spontaneous emission (ASE) threshold of a thin film of surface-treated CsPbBr₃ nanoparticles reduces to a record low of ∼1.2 μJ/cm² with a corresponding average exciton occupancy per nanoparticle of 0.62. The ultralow pump threshold and increased stability allow for stable ASE over millions of laser shots, paving the way for the deployment of these nanoparticles as viable solution-processed optical gain media.

Stable, Ultralow Threshold Amplified Spontaneous Emission from CsPbBr3 Nanoparticles Exhibiting Trion Gain

Wet-chemically synthesized cesium lead halide nanoparticles have many attractive properties that make them promising as optical gain media, but generally suffer from poor stability under ambient conditions and an optical gain threshold that is widely believed to be dictated by the need for biexcitons. These conditions make it impractical for such particles to be utilized as gain media given the need to undergo repeated stimulated emission processes at above-threshold pump intensities over long periods of time. We demonstrate that the surface treatment of CsPbBr₃ nanoparticles with a mixture of PbBr₂, oleic acid, and oleylamine not only raises their fluorescence quantum yield to nearly unity and prolongs their stability in air from days to months, but it also dramatically increases their trion photoluminescence lifetime from ∼0.9 to ∼1.6 ns. Via a combination of time-resolved photoluminescence and transient absorption spectroscopy, we provide evidence for trion gain at sufficiently low pump intensities in which the likelihood of predominantly biexciton-based gain is small. We then show that, in line with theoretical prediction, the amplified spontaneous emission (ASE) threshold of a thin film of surface-treated CsPbBr₃ nanoparticles reduces to a record low of ∼1.2 μJ/cm² with a corresponding average exciton occupancy per nanoparticle of 0.62. The ultralow pump threshold and increased stability allow for stable ASE over millions of laser shots, paving the way for the deployment of these nanoparticles as viable solution-processed optical gain media.

Solution-Grown CsPbBr3 /Cs4 PbBr6 Perovskite Nanocomposites: Toward Temperature-Insensitive Optical Gain

With regards to developing miniaturized coherent light sources, the temperature-insensitivity in gain spectrum and threshold is highly desirable. Quantum dots (QDs) are predicted to possess a temperature-insensitive threshold by virtue of the separated electronic states; however, it is never observed in colloidal QDs due to the poor thermal stability. Besides, for the classical II-VI QDs, the gain profile generally redshifts with increasing temperature, plaguing the device chromaticity. Herein, this paper addresses the above two issues simultaneously by embedding ligands-free CsPbBr₃ nanocrystals in a wider band gap Cs₄ PbBr₆ matrix by solution-phase synthesis. The unique electronic structures of CsPbBr₃ nanocrystals enable temperature-insensitive gain spectrum while the lack of ligands and protection from Cs₄ PbBr₆ matrix ensure the thermal stability and high temperature operation. Specifically, a color drift-free stimulated emission irrespective of temperature change (20-150 °C) upon two-photon pumping is presented and the characteristic temperature is determined to be as high as ≈260 K. The superior gain properties of the CsPbBr₃ /Cs₄ PbBr₆ perovskite nanocomposites are directly validated by a vertical cavity surface emitting laser operating at temperature as high as 100 °C. The results shed light on manipulating optical gain from the advantageous CsPbBr₃ nanocrystals and represent a significant step toward the temperature-insensitive frequency-upconverted lasers.

Single-Mode Lasing from "Giant" CdSe/CdS Core-Shell Quantum Dots in Distributed Feedback Structures

"Giant" semiconductor quantum dots (GQDs) have tremendous potential for applications in laser devices. Here, CdSe/CdS core-shell GQDs (11 monolayers) have been synthesized as lasing gain material. The photoluminescence decay of the GQD ensemble is single-exponential, and the two-photon absorption cross-section is above 10⁵ GM. This article presents a versatile method for fabrication of CdSe/CdS GQD distributed feedback (DFB) lasers by laser interference ablation. A high-quality surface-relief grating structure can be readily created on the GQD thin films, and the relationship between laser beam intensity and surface modulation depth is studied. With appropriate periods, single-mode lasing emission has been detected from these devices under excitation wavelengths of 400 and 800 nm. The laser thresholds are as low as 0.028 and 1.03 mJ cm^-2, with the lasing Q-factors of 709 and 586, respectively. Lasing operation is realized from the direct laser interference-ablated QD DFB structures for the first time.

Optical Characterization of Doped Thermoplastic and Thermosetting Polymer-Optical-Fibers

The emission properties of a graded-index thermoplastic polymer optical fiber and a step-index thermosetting one, both doped with rhodamine 6G, have been studied. The work includes a detailed analysis of the amplified spontaneous emission together with a study of the optical gains and losses of the fibers. The photostability of the emission of both types of fibers has also been investigated. Comparisons between the results of both doped polymer optical fibers are presented and discussed.

Effect of Auger Recombination on Lasing in Heterostructured Quantum Dots with Engineered Core/Shell Interfaces

Nanocrystal quantum dots (QDs) are attractive materials for applications as laser media because of their bright, size-tunable emission and the flexibility afforded by colloidal synthesis. Nonradiative Auger recombination, however, hampers optical amplification in QDs by rapidly depleting the population of gain-active multiexciton states. In order to elucidate the role of Auger recombination in QD lasing and isolate its influence from other factors that might affect optical gain, we study two types of CdSe/CdS core/shell QDs with the same core radii and the same total sizes but different properties of the core/shell interface ("sharp" vs "smooth"). These samples exhibit distinctly different biexciton Auger lifetimes but are otherwise virtually identical. The suppression of Auger recombination in the sample with a smooth (alloyed) interface results in a notable improvement in the optical gain performance manifested in the reduction of the threshold for amplified spontaneous emission and the ability to produce dual-color lasing involving both the band-edge (1S) and the higher-energy (1P) electronic states. We develop a model, which explicitly accounts for the multiexciton nature of optical gain in QDs, and use it to analyze the competition between stimulated emission from multiexcitons and their decay via Auger recombination. These studies re-emphasize the importance of Auger recombination control for the realization of real-life QD-based lasing technologies and offer practical strategies for suppression of Auger recombination via "interface engineering" in core/shell structures.

Polymer/Perovskite Amplifying Waveguides for Active Hybrid Silicon Photonics

The emission properties of hybrid halide perovskites are exploited to implement a stable and very low power operation waveguide optical amplifier integrated in a silicon platform. By optimizing its design with a poly(methyl methacrylate) (PMMA) encapsulation, this novel photonic device presents a net gain of around 10 dB cm(-1) and 3-4 nm linewidth with an energy threshold as low as 2 nJ pulse(-1) and exhibiting no degradation after one year.